Zinc Oxide Grown by Atomic Layer Deposition: From Heavily n‐Type to p‐Type Material

2019 ◽  
Vol 257 (2) ◽  
pp. 1900472 ◽  
Author(s):  
Elzbieta Guziewicz ◽  
Tomasz Aleksander Krajewski ◽  
Ewa Przezdziecka ◽  
Krzysztof P. Korona ◽  
Nikodem Czechowski ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Type Material ◽  
Layer Deposition ◽  
P Type

scholarly journals Atomic Layer Deposition Grown Zinc-Oxide Based MIS-Type Schottky Barrier Diode

2018 ◽  
Author(s):  
Nuriye Kaymak ◽  
Esra Efil ◽  
Elanur Seven ◽  
Adem Tataroğlu ◽  
Sema Bilge Ocak ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Thermionic Emission ◽  
Atomic Layer ◽  
Interface State ◽  
State Density ◽  
Layer Deposition ◽  
P Type

We report on the fabrication and electrical characteristics of zinc-oxide (ZnO) based metal-insulator-semiconductor (MIS) type Schottky barrier diodes (SBHs). ZnO thin layer on the p-type silicon substrate was fabricated by atomic layer deposition (ALD). The structure and surface properties of the thin film were characterized by X-ray diffraction (XRD), atomic force microscope (AFM) and secondary ion mass spectrometer (SIMS). The current-voltage (I-V) characteristics of Al/ALD-grown ZnO/p-Si diodes were measured under dark at room temperature. The electrical parameters such as ideality factor (n), series resistance (Rs) and barrier height (ϕb) of the diodes were analyzed using standard thermionic emission (TE) theory, Norde and Cheung method. The barrier height value obtained from I-V and Cheung method was found to be 0.73 eV and 0.76 eV, respectively. The interface state density (Dit) of the diodes was determined from the I-V characteristics. The nonideal behavior of measured parameters suggested the presence of interface states. The obtained results showed that the prepared diode can be used for NIR Schottky photodetector applications.

Improving the photodetection and stability of a visible-light QDs/ZnO phototransistor via an Al2O3 additional layer

2021 ◽  
Author(s):  
Sungho Park ◽  
Byung Jun Kim ◽  
Tae Yeon Kim ◽  
Eui Young Jung ◽  
Kyu-Myung Lee ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Quantum Dot ◽  
Aluminum Oxide ◽  
Thin Layer ◽  
Visible Light ◽  
Atomic Layer ◽  
Zno Films ◽  
Additional Layer ◽  
Layer Deposition

We have developed a visible-light phototransistor with excellent photodetection characteristics and stability via atomic layer deposition (ALD) to add a thin layer of aluminum oxide (Al2O3) to quantum dot (QD)/zinc oxide (ZnO) films.

scholarly journals Kinetic Monte Carlo Study of the Atomic Layer Deposition of Zinc Oxide

2018 ◽  
Vol 122 (47) ◽  
pp. 27044-27058 ◽  
Author(s):  
Timo Weckman ◽  
Mahdi Shirazi ◽  
Simon D. Elliott ◽  
Kari Laasonen
Keyword(s):  
Monte Carlo ◽  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Kinetic Monte Carlo ◽  
Monte Carlo Study ◽  
Atomic Layer ◽  
Layer Deposition

Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films

2011 ◽  
Vol 1315 ◽  
Author(s):  
Paul R. Chalker ◽  
Paul A. Marshall ◽  
Simon Romani ◽  
Matthew J. Rosseinsky ◽  
Simon Rushworth ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Film Thickness ◽  
Transparent Conducting Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Contactless Measurement ◽  
Zinc Oxide Films ◽  
Transparent Conducting ◽  
Layer Deposition

ABSTRACTThin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350°C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Ω/☐ was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm2/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.

scholarly journals RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition

2013 ◽  
Vol 123 (5) ◽  
pp. 899-903 ◽  
Author(s):  
R. Ratajczak ◽  
A. Stonert ◽  
E. Guziewicz ◽  
S. Gierałtowska ◽  
T.A. Krajewski ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Oxide Films ◽  
Atomic Layer ◽  
Zinc Oxide Films ◽  
Layer Deposition
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