Clues to the Electrical Switching Mechanism of Carbazole-Containing Polyimide Thin Films

2014 ◽  
Vol 6 (23) ◽  
pp. 21692-21701 ◽  
Author(s):  
Brian J. Ree ◽  
Wonsang Kwon ◽  
Kyungtae Kim ◽  
Yong-Gi Ko ◽  
Young Yong Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Switching ◽  
Switching Mechanism

scholarly journals 7-Alkoxy-appended coumarin derivatives: synthesis, photo-physical properties, aggregation behaviours and current–voltage (I–V) characteristic studies on thin films

RSC Advances ◽  
2021 ◽  
Vol 11 (17) ◽  
pp. 10212-10223
Author(s):  
Abhijit Rudra Paul ◽  
Bapi Dey ◽  
Sudip Suklabaidya ◽  
Syed Arshad Hussain ◽  
Swapan Majumdar
Keyword(s):  
Thin Films ◽  
Carboxylic Acid ◽  
Physical Properties ◽  
Chemical Characteristics ◽  
Coumarin Derivatives ◽  
Design Synthesis ◽  
Electrical Switching ◽  
Physico Chemical ◽  
Current Voltage

In this article, we demonstrate the design, synthesis and physico-chemical characteristics, including electrical switching behaviours of long alkoxy-appended coumarin carboxylate/carboxylic acid in thin films.

Switching Mechanism of Co-Cr Single-Layer Thin Films

1988 ◽  
Vol 3 (12) ◽  
pp. 838-847
Author(s):  
F. Kugiya ◽  
M. Suzuki ◽  
K. Yoshida ◽  
O. Kitakami
Keyword(s):  
Thin Films ◽  
Single Layer ◽  
Switching Mechanism

scholarly journals Biomaterial-Induced Stable Resistive Switching Mechanism in TiO2 Thin Films: The Role of Active Interstitial Sites/Ions in Minimum Current Leakage and Superior Bioactivity

ACS Omega ◽  
2020 ◽  
Vol 5 (30) ◽  
pp. 19050-19060
Author(s):  
Misbah Sehar Abbasi ◽  
Muhammad Sultan Irshad ◽  
Naila Arshad ◽  
Iftikhar Ahmed ◽  
Muhammad Idrees ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tio2 Thin Films ◽  
Current Leakage ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

A study on the electrical switching mechanism in [TBA]x[Ni(dmid)2] thin film materials by XPS

1997 ◽  
Vol 86 (1-3) ◽  
pp. 2265-2266 ◽  
Author(s):  
Sheng-Gao Liu ◽  
Yun-Qi Liu ◽  
Dao-Ben Zhu
Keyword(s):  
Thin Film ◽  
Electrical Switching ◽  
Switching Mechanism

Thin Films of Nanocrystalline Vanadium Dioxide: Modification of the Properties, and Electrical Switching

2020 ◽  
Vol 854 ◽  
pp. 103-108
Author(s):  
A.L. Pergament ◽  
O.Ya. Berezina ◽  
S.V. Burdyukh ◽  
V.P. Zlomanov ◽  
Evgeniy A. Tutov
Keyword(s):  
Thin Films ◽  
Vanadium Oxide ◽  
Vanadium Dioxide ◽  
Sol Gel ◽  
Oxide Films ◽  
Threshold Value ◽  
Implantation Dose ◽  
Electrical Switching ◽  
Hydrogen Implantation ◽  
Vanadium Oxide Films

Vanadium oxide films have been fabricated by the acetylacetonate and triethoxy vanadyl sol-gel methods on silicon substrates, as well as by magnetron sputtering on glass-ceramic substrates. Additional annealing in reducing atmosphere results in formation of vanadium dioxide or mixed phases with a VO2 predominance. The obtained films demonstrate the metal-insulator transition and electrical switching. In the films produced from triethoxy vanadyl, the peculiarities of electrical properties are related to the size effect, heterophase character of vanadium oxide films, and different types of charge carriers in the bulk of nanocrystallites and on their surfaces. Also, the effect of doping with hydrogen by means of plasma-immersion ion implantation on the properties of vanadium dioxide is explored. It is shown that the transition parameters in VO2 thin films depend on the hydrogen implantation dose. At doses exceeding a certain threshold value, the films are metallized, and the phase transition no longer occurs.

Electrical Switching of Al-Doped Amorphous SiOx Thin Films

2014 ◽  
Vol 50 (7) ◽  
pp. 1-3
Author(s):  
Jian-Shiou Huang ◽  
Yu-Chuan Shih ◽  
Li-Ming Chen ◽  
Ting-Yi Lin ◽  
Shih-Chin Chang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Switching

Research on resistive switching mechanism of multi-filaments formation/rupture in nickel oxide thin films

2017 ◽  
Vol 201 ◽  
pp. 169-172 ◽  
Author(s):  
Yuxiang Luo ◽  
Sipei Shao ◽  
Huijun Hu ◽  
Jingjing Li ◽  
Jingshi Shen ◽  
...  
Keyword(s):  
Thin Films ◽  
Nickel Oxide ◽  
Resistive Switching ◽  
Oxide Thin Films ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism ◽  
Nickel Oxide Thin Films

Resistance switching mechanism of La0.8Sr0.2MnO3−δ thin films

2016 ◽  
Vol 483 ◽  
pp. 99-102 ◽  
Author(s):  
X.D. Luo ◽  
R.L. Gao ◽  
C.L. Fu ◽  
W. Cai ◽  
G. Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistance Switching ◽  
Switching Mechanism

scholarly journals Irreversible magnetization process and switching mechanism in L10 FePt thin films

AIP Advances ◽  
2017 ◽  
Vol 7 (5) ◽  
pp. 056206 ◽  
Author(s):  
A. Lisfi ◽  
S. Pokharel ◽  
O. Akioya ◽  
N. H. Alqhtany ◽  
M. Wuttig
Keyword(s):  
Thin Films ◽  
Magnetization Process ◽  
Switching Mechanism ◽  
Irreversible Magnetization ◽  
Fept Thin Films
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