Resistance switching mechanism of La0.8Sr0.2MnO3−δ thin films

2016 ◽  
Vol 483 ◽  
pp. 99-102 ◽  
Author(s):  
X.D. Luo ◽  
R.L. Gao ◽  
C.L. Fu ◽  
W. Cai ◽  
G. Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistance Switching ◽  
Switching Mechanism

Reversible Electrical Resistance Switching in GeSbTe Thin Films: An Electrolytic Approach without Amorphous-Crystalline Phase-Change

2008 ◽  
Vol 1071 ◽  
Author(s):  
Ramanathaswamy Pandian ◽  
Bart J. Kooi ◽  
George Palasantzas ◽  
Jeff Th. M. De Hosson
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Phase Change ◽  
Crystalline Phase ◽  
Electrical Resistance ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Conductive Atomic Force Microscopy ◽  
Switching Mechanism ◽  
Starting Point

AbstractBesides the well-known resistance switching originating from the amorphous-crystalline phase-change in GeSbTe thin films, we demonstrate another switching mechanism named ‘polarity-dependent resistance (PDR) switching’. The electrical resistance of the film switches between a low- and high-state when the polarity of the applied electric field is reversed. This switching is not connected to the phase-change, as it only occurs in the crystalline phase of the film, but connected to the solid-state electrolytic behavior i.e. high ionic conductivity of (Sb-rich) GeSbTe under an electric field. I-V characteristics of nonoptimized capacitor-like prototype cells of various dimensions clearly exhibited the switching behavior when sweeping the voltage between +1 V and -1 V (starting point: 0 V). The switching was demonstrated also with voltage pulses of amplitudes down to 1 V and pulse widths down to 1 microsecond for several hundred of cycles with resistance contrasts up to 150 % between the resistance states. Conductive atomic force microscopy (CAFM) was used to examine PDR switching at nanoscales in tip-written crystalline marks, where the switching occurred for less than 1.5 V with more than three orders of resistance contrasts. Our experiments demonstrated a novel and technologically important switching mechanism, which consumes less power than the usual phase-change switching and provide opportunity to bring together the two resistance switching types (phase-change and PDR) in a single system to extend the applicability of GeSbTe materials.

Switching Mechanism of Co-Cr Single-Layer Thin Films

1988 ◽  
Vol 3 (12) ◽  
pp. 838-847
Author(s):  
F. Kugiya ◽  
M. Suzuki ◽  
K. Yoshida ◽  
O. Kitakami
Keyword(s):  
Thin Films ◽  
Single Layer ◽  
Switching Mechanism

Fabrication and Resistance-Switching Behaviors of NiO Thin Films by Thermal Oxidation of Evaporated Ni Films

2009 ◽  
Vol 66 ◽  
pp. 131-134
Author(s):  
X. Cao ◽  
Xiao Min Li ◽  
Wei Dong Yu ◽  
Rui Yang ◽  
Xin Jun Liu
Keyword(s):  
Thin Films ◽  
Thermal Oxidation ◽  
Resistive Switching ◽  
Resistance Switching ◽  
Si Substrates ◽  
Current Compliance

Polycrystalline NiO thin films were fabricated on Pt (111)/Ti/SiO2/Si substrates by thermal oxidation of the evaporated Ni films. Pt/NiO/Pt structures were prepared, and they showed reversible resistance switching behaviors. When the compliance set current was varied from 5 mA to 40 mA, the on-state currents increased, while the on-state resistances decreased. It is probably attributed to higher current compliance resulted in the formation of stronger and less resistive filaments, which in turn need more energy and power for their rupture. The resistive switching in NiO thin films is closely related to the formation and rupture of conducting filaments.

Resistance switching in perovskite thin films

2006 ◽  
Vol 243 (9) ◽  
pp. 2089-2097 ◽  
Author(s):  
A. Ignatiev ◽  
N. J. Wu ◽  
X. Chen ◽  
S. Q. Liu ◽  
C. Papagianni ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistance Switching

In situ X-ray diffraction study of the controlled oxidation and reduction in the V–O system for the synthesis of VO2 and V2O3 thin films

2015 ◽  
Vol 3 (43) ◽  
pp. 11357-11365 ◽  
Author(s):  
Geert Rampelberg ◽  
Bob De Schutter ◽  
Wouter Devulder ◽  
Koen Martens ◽  
Iuliana Radu ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffraction Study ◽  
Resistance Switching ◽  
X Ray Diffraction ◽  
X Ray

VO2 and V2O3 thin films were prepared during in situ XRD investigation by oxidation and reduction of V and V2O5. Films show up to 5 orders of magnitude resistance switching.

Resistance switching in polycrystalline BiFeO3 thin films

2010 ◽  
Vol 97 (4) ◽  
pp. 042101 ◽  
Author(s):  
Kuibo Yin ◽  
Mi Li ◽  
Yiwei Liu ◽  
Congli He ◽  
Fei Zhuge ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistance Switching ◽  
Bifeo3 Thin Films

Temperature Dependence of Resistance Switching in Cr Doped SrZrO3 Thin Films

2007 ◽  
Vol 51 (3) ◽  
pp. 1089 ◽  
Author(s):  
Mooyoung Kim ◽  
Hyungsang Kim ◽  
Yongmin Kim ◽  
Woong Jung ◽  
Hyunsik Im ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Resistance Switching

scholarly journals Biomaterial-Induced Stable Resistive Switching Mechanism in TiO2 Thin Films: The Role of Active Interstitial Sites/Ions in Minimum Current Leakage and Superior Bioactivity

ACS Omega ◽  
2020 ◽  
Vol 5 (30) ◽  
pp. 19050-19060
Author(s):  
Misbah Sehar Abbasi ◽  
Muhammad Sultan Irshad ◽  
Naila Arshad ◽  
Iftikhar Ahmed ◽  
Muhammad Idrees ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tio2 Thin Films ◽  
Current Leakage ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

Reproducible resistance switching for BaTiO3 thin films fabricated by RF-magnetron sputtering

2011 ◽  
Vol 519 (10) ◽  
pp. 3291-3294 ◽  
Author(s):  
Chang Hwa Jung ◽  
Seong Ihl Woo ◽  
Yun Seok Kim ◽  
Kwang Soo No
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Resistance Switching
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