Hierarchical Nanocomposites of Vanadium Oxide Thin Film Anchored on Graphene as High-Performance Cathodes in Li-Ion Batteries

2014 ◽  
Vol 6 (21) ◽  
pp. 18894-18900 ◽  
Author(s):  
Zhe-Fei Li ◽  
Hangyu Zhang ◽  
Qi Liu ◽  
Yadong Liu ◽  
Lia Stanciu ◽  
...  
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
High Performance ◽  
Oxide Thin Film ◽  
Li Ion Batteries ◽  
Vanadium Oxide Thin Film ◽  
Li Ion

AC Magnetron Sputtering: An Industrial Approach for High‐Voltage and High‐Performance Thin‐Film Cathodes for Li‐Ion Batteries

2021 ◽  
pp. 2002125
Author(s):  
Jokin Rikarte ◽  
Iñaki Madinabeitia ◽  
Giorgio Baraldi ◽  
Francisco José Fernández‐Carretero ◽  
Víctor Bellido‐González ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
High Voltage ◽  
High Performance ◽  
Li Ion Batteries ◽  
Li Ion

Study on Reactive Ion Etching of Vanadium Oxide Thin Film by Taguchi Method

2014 ◽  
Vol 909 ◽  
pp. 91-94
Author(s):  
Jun Gou ◽  
Hui Ling Tai ◽  
Jun Wang ◽  
De En Gu ◽  
Xiong Bang Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
Taguchi Method ◽  
Vanadium Oxide ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Oxide Thin Film ◽  
Optimum Process ◽  
Rf Power ◽  
Ion Etching ◽  
Vanadium Oxide Thin Film

A high selectivity patterning technology of vanadium oxide (VOx) thin film was suggested in this paper. VOxthin film was etched through a photoresist (PR) mask using Cl/N based gases in a reactive ion etching (RIE) system. Taguchi method was used for process design to identify factors that influence the patterning and find optimum process parameters. Experimental results suggested that RF power was the largest contribution factor for VOxetch rate, PR selectivity and uniformity on 6 inch diameter wafer. Uniformity and PR selectivity were improved by introducing a small amount of N2. High resolution and low roughness patterning transfer was achieved with a non uniformity of 2.4 %, an VOxetch rate of 74 nm/min, a PR selectivity of 0.96, a Si3N4selectivity of 5 and a SiO2selectivity of 10.

On growth of epitaxial vanadium oxide thin film on sapphire (0001)

2010 ◽  
Vol 25 (3) ◽  
pp. 422-426 ◽  
Author(s):  
Tsung-Han Yang ◽  
Chunming Jin ◽  
Ravi Aggarwal ◽  
R.J. Narayan ◽  
Jay Narayan
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
Epitaxial Growth ◽  
Thermal Hysteresis ◽  
Large Angle ◽  
Film Plane ◽  
Oxide Thin Film ◽  
Resistance Change ◽  
Transmission Electron ◽  
Vanadium Oxide Thin Film

We report the characteristics of epitaxial growth and properties of vanadium oxide (VO2) thin films on sapphire (0001) substrates. Pulsed laser deposition was used to grow (002) oriented VO2 films on sapphire (0001). Transmission electron microscopy studies showed that the orientation relationship between the substrate and the thin film is: (002)f2∥(0006)sub3 and [010]f2 ∥sub. It was also established that VO2 has three different orientations in the film plane which are rotated by 60° from each other. The epitaxial growth of vanadium oxide on sapphire (0001) has been explained in the framework of domain matching epitaxy (DME). Electrical resistivity measurements as a function of temperature showed a sharp transition with a hysteresis width ˜5 °C, and large resistance change (˜1.5 × 104) from the semiconductor phase to the metal phase. It is interesting to note that in spite of large angle twin boundaries in these VO2 films, the SMT characteristics are better than those observed for polycrystalline films. The higher width of thermal hysteresis for the VO2 film on c-sapphire compared to a bulk single VO2 crystal and a single-crystal VO2 film on r-sapphire can be attributed to the existence of these large-angle twin grain boundaries. These findings can provide insight into the phase transformation characteristics of VO2, which has important applications in switching and memory devices.

Synthesis and electrical characterisation of vanadium oxide thin film thermometer for microbolometer applications

2016 ◽  
Vol 52 (10) ◽  
pp. 827-828 ◽  
Author(s):  
M.F. Zia ◽  
M. Abdel‐Rahman ◽  
M. Alduraibi ◽  
B. Ilahi ◽  
A. Alasaad
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
Oxide Thin Film ◽  
Vanadium Oxide Thin Film

High-performance polycrystalline RuOx cathodes for thin film Li-ion batteries

2018 ◽  
Vol 283 ◽  
pp. 228-233 ◽  
Author(s):  
Daniele Perego ◽  
Jillian Swee Teng Heng ◽  
Xinghui Wang ◽  
Yang Shao-Horn ◽  
Carl V. Thompson
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Li Ion Batteries ◽  
Li Ion

Analysis of the resistive switching behaviors of vanadium oxide thin film

2013 ◽  
Vol 22 (3) ◽  
pp. 037201 ◽  
Author(s):  
Xiao-Ying Wei ◽  
Ming Hu ◽  
Kai-Liang Zhang ◽  
Fang Wang ◽  
Jin-Shi Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
Resistive Switching ◽  
Oxide Thin Film ◽  
Vanadium Oxide Thin Film

Three-dimensional porous Zn2VO4/ZnO/C thin film anode materials for high-performance Li-ion batteries

2019 ◽  
Vol 166 ◽  
pp. 87-91 ◽  
Author(s):  
Jiafeng Zhou ◽  
Bangchuan Zhao ◽  
Jin Bai ◽  
Zhitang Fang ◽  
Kunzhen Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Anode Materials ◽  
High Performance ◽  
Three Dimensional ◽  
Li Ion Batteries ◽  
Li Ion
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