Long-Term Sustainable Aluminum Precursor Solution for Highly Conductive Thin Films on Rigid and Flexible Substrates

2014 ◽  
Vol 6 (17) ◽  
pp. 15480-15487 ◽  
Author(s):  
Hye Moon Lee ◽  
Jung Yoon Seo ◽  
Areum Jung ◽  
Si-Young Choi ◽  
Seung Hwan Ko ◽  
...  
Keyword(s):  
Thin Films ◽  
Precursor Solution ◽  
Flexible Substrates ◽  
Conductive Thin Films ◽  
Aluminum Precursor

scholarly journals Influence of Evaporation-Deposition Geometry on Conductive Thin Films

1980 ◽  
Vol 7 (1-3) ◽  
pp. 171-179
Author(s):  
J. Griessing
Keyword(s):  
Thin Films ◽  
Angular Distribution ◽  
Cu Films ◽  
Term Stability ◽  
Long Term Stability ◽  
Conductive Films ◽  
Conductive Thin Films

There is a striking dependence of the evaporation deposition geometry (i.e. angular distribution of the incident vapor beam) on the properties of deposited conductive films. This paper discusses solderability, adhesion and long-term stability of adhesion of Ti-Pd-Au, Ti-Au and Ti-Cu films. In all cases the above properties were improved by an evaporation deposition geometry with steep angles of the incident vapor beam.

Single-step direct fabrication of luminescent Cu-doped ZnxCd1−xS quantum dot thin films via a molecular precursor solution approach and their application in luminescent, transparent, and conductive thin films

Nanoscale ◽  
2014 ◽  
Vol 6 (16) ◽  
pp. 9640-9645 ◽  
Author(s):  
Yanyan Chen ◽  
Shenjie Li ◽  
Lijian Huang ◽  
Daocheng Pan
Keyword(s):  
Thin Films ◽  
Quantum Dot ◽  
Solution Method ◽  
Precursor Solution ◽  
Single Step ◽  
Solution Approach ◽  
Molecular Precursor ◽  
Direct Fabrication ◽  
Conductive Thin Films

Luminescent Cu-doped ZnxCd1−xS quantum dot thin films have been directly fabricated via a facile solution method in open air.

Electrical Anisotropy of Thin Metal Films Growing on Dielectric Substrates

2002 ◽  
Vol 7 (2) ◽  
pp. 45-52
Author(s):  
L. Jakučionis ◽  
V. Kleiza
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Uniaxial Anisotropy ◽  
Metal Films ◽  
Thin Layers ◽  
Electrical Anisotropy ◽  
Electrical Field ◽  
Dielectric Substrates ◽  
Unequal Probability ◽  
Conductive Thin Films

Electrical properties of conductive thin films, that are produced by vacuum evaporation on the dielectric substrates, and which properties depend on their thickness, usually are anisotropic i.e. they have uniaxial anisotropy. If the condensate grow on dielectric substrates on which plane electrical field E is created the transverse voltage U⊥ appears on the boundary of the film in the direction perpendicular to E. Transverse voltage U⊥ depends on the angle γ between the applied magnetic field H and axis of light magnetisation. When electric field E is applied to continuous or grid layers, U⊥ and resistance R of layers are changed by changing γ. It means that value of U⊥ is the measure of anisotropy magnitude. Increasing voltage U0 , which is created by E, U⊥ increases to certain magnitude and later decreases. The anisotropy of continuous thin layers is excited by inequality of conductivity tensor components σ0 ≠ σ⊥. The reason of anisotropy is explained by the model which shows that properties of grain boundaries are defined by unequal probability of transient of charge carrier.

Magnetic and microwave properties of FeNi thin films of different thicknesses deposited onto cyclo olefin copolymer flexible substrates

2021 ◽  
pp. 1-1
Author(s):  
C. M. Madrid Aguilar ◽  
A. V. Svalov ◽  
A. A. Kharlamova ◽  
E. E. Shalygina ◽  
A. Larranaga ◽  
...  
Keyword(s):  
Thin Films ◽  
Microwave Properties ◽  
Flexible Substrates

Carbon Nanotube Based Transparent Conductive Thin Films

2006 ◽  
Vol 6 (7) ◽  
pp. 1939-1944 ◽  
Author(s):  
X. Yu ◽  
R. Rajamani ◽  
K. A. Stelson ◽  
T. Cui
Keyword(s):  
Thin Films ◽  
Carbon Nanotube ◽  
Conductive Thin Films

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

Sol-gel synthesis of textured lanthanum titanate thin films

2003 ◽  
Vol 18 (2) ◽  
pp. 357-362 ◽  
Author(s):  
Mary M. Sandstrom ◽  
Paul Fuierer
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Precursor Solution ◽  
Solution Concentration ◽  
Optical Measurements ◽  
Layered Perovskite ◽  
Orientation Factor ◽  
Anisotropic Structures ◽  
Sol Gel Films ◽  
Sol Gel Synthesis

Control over crystallographic orientation in thin films is important, particularly with highly anisotropic structures. Because of its ferroelectric nature, the layered perovskite La2Ti2O7 has interesting piezoelectric and electrooptic properties that may be exploited when films are highly textured. Sol-gel films with an orientation factor of greater than 95% were fabricated without relying on epitaxial (lattice-matching) growth from the substrate. Film orientation and crystallization were confirmed by x-ray diffraction, scanning electron microscopy, atomic force microscopy, and optical measurements. The particle sizes in all precursor solutions were measured by dynamic light scattering experiments. Experimental results indicate that film orientation is a function of precursor solution concentration, size of the molecular clusters in the solution, and film thickness.

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