High-Performance Nonvolatile Organic Transistor Memory Devices Using the Electrets of Semiconducting Blends

2014 ◽  
Vol 6 (15) ◽  
pp. 12780-12788 ◽  
Author(s):  
Yu-Cheng Chiu ◽  
Tzu-Ying Chen ◽  
Yougen Chen ◽  
Toshifumi Satoh ◽  
Toyoji Kakuchi ◽  
...  
2017 ◽  
Vol 49 ◽  
pp. 218-225 ◽  
Author(s):  
Naien Shi ◽  
Dong Liu ◽  
Xiaolei Jin ◽  
Wandan Wu ◽  
Jun Zhang ◽  
...  

Author(s):  
D. Prime ◽  
S. Paul

The demand for more efficient and faster memory structures is greater today than ever before. The efficiency of memory structures is measured in terms of storage capacity and the speed of functioning. However, the production cost of such configurations is the natural constraint on how much can be achieved. Organic memory devices (OMDs) provide an ideal solution, in being inexpensive, and at the same time promising high performance. However, all OMDs reported so far suffer from multiple drawbacks that render their industrial implementation premature. This article introduces the different types of OMDs, discusses the progress in this field over the last 9 years and invokes conundrums that scholars of this field are currently faced with, such as questions about the charging mechanism and stability of devices, contradictions in the published work and some future directions.


2014 ◽  
Author(s):  
Mau-Shen Lu ◽  
Chien Lu ◽  
Meng-Hsien Li ◽  
Cheng-Liang Liu ◽  
Wen-Chang Chen

Small ◽  
2018 ◽  
Vol 14 (25) ◽  
pp. 1800756 ◽  
Author(s):  
Chaoyue Zheng ◽  
Tong Tong ◽  
Yueming Hu ◽  
Yuming Gu ◽  
Huarui Wu ◽  
...  

RSC Advances ◽  
2017 ◽  
Vol 7 (22) ◽  
pp. 13171-13176 ◽  
Author(s):  
Zhiguo Kong ◽  
Dongxue Liu ◽  
Jinghan He ◽  
Xiuyan Wang

CuI and Bphen buffer layers result in decreased switch threshold voltage and an increased ON/OFF ratio of an organic WORM memory device.


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