Charge-Storage Aromatic Amino Compounds for Nonvolatile Organic Transistor Memory Devices

Small ◽  
2018 ◽  
Vol 14 (25) ◽  
pp. 1800756 ◽  
Author(s):  
Chaoyue Zheng ◽  
Tong Tong ◽  
Yueming Hu ◽  
Yuming Gu ◽  
Huarui Wu ◽  
...  
Keyword(s):  
Charge Storage ◽  
Memory Devices ◽  
Organic Transistor ◽  
Amino Compounds

Well-defined star-shaped donor–acceptor conjugated molecules for organic resistive memory devices

2015 ◽  
Vol 51 (75) ◽  
pp. 14179-14182 ◽  
Author(s):  
Hung-Chin Wu ◽  
Jicheng Zhang ◽  
Zhishan Bo ◽  
Wen-Chang Chen
Keyword(s):  
Charge Storage ◽  
Memory Devices ◽  
Resistive Memory ◽  
Conjugated Molecules ◽  
Storage Materials ◽  
End Groups ◽  
Donor Acceptor ◽  
Solution Processable ◽  
First Time

Solution processable star-shaped donor–acceptor conjugated molecules are explored for the first time as charge storage materials for resistor-type memory devices with a triphenylamine (donor) core, and three 1.8-naphthalimide (acceptors) end-groups.

Nonvolatile organic transistor memory devices based on nanostructured polymeric materials

2014 ◽  
Author(s):  
Mau-Shen Lu ◽  
Chien Lu ◽  
Meng-Hsien Li ◽  
Cheng-Liang Liu ◽  
Wen-Chang Chen
Keyword(s):  
Polymeric Materials ◽  
Memory Devices ◽  
Organic Transistor

A star polymer with a metallo-phthalocyanine core as a tunable charge storage material for nonvolatile transistor memory devices

2018 ◽  
Vol 6 (11) ◽  
pp. 2724-2732 ◽  
Author(s):  
Junko Aimi ◽  
Po-Hung Wang ◽  
Chien-Chung Shih ◽  
Chih-Feng Huang ◽  
Takashi Nakanishi ◽  
...  
Keyword(s):  
Memory Device ◽  
Star Polymer ◽  
Charge Storage ◽  
Device Performance ◽  
Memory Devices ◽  
Storage Material ◽  
Novel Strategy ◽  
A Charge

A novel strategy to control the OFET memory device performance has been demonstrated using a metallophthalocyanine-cored star-shaped polystyrene as a charge storage material.

Future Silicon Nanocrystal Nonvolatile Memory Technology

2001 ◽  
Vol 686 ◽  
Author(s):  
Michele L. Ostraat ◽  
Jan W. De Blauwe
Keyword(s):  
Threshold Voltage ◽  
Flash Memory ◽  
Nonvolatile Memory ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Channel Length ◽  
Charge Storage ◽  
Memory Devices ◽  
Two Stage ◽  
Nanocrystal Memory

AbstractA great deal of research interest is being invested in the fabrication and characterization of nanocrystal structures as charge storage memory devices. In these flash memory devices, it is possible to measure threshold voltage shifts due to charge storage of only a few electrons per nanocrystal at room temperature. Although a variety of methods exist to fabricate nanocrystals and to incorporate them into device layers, control over the critical nanocrystal dimensions, tunnel oxide thickness, and interparticle separation and isolation remains difficult to achieve. This control is vital to produce reliable and consistent devices over large wafer areas. To address these control issues, we have developed a novel two-stage ultra clean reactor in which the Si nanocrystals are generated as single crystal, nonagglomerated, spherical aerosol particles from silane decomposition at 950°C at concentrations exceeding 108 cm−3 at sizes below 10 nm. Using existing aerosol instrumentation, it is possible to control the particle size to approximately 10% on diameter. In the second reactor, particles are passivated with a high quality oxide layer with shell thickness controllable from 0.7 to 2.0 nm. The two-stage aerosol reactor is integrated to a 200 mm wafer deposition chamber such that controlled particle densities can be deposited thermophoretically. With nanocrystal deposits of 1013 cm−2, contamination of transition metals and other elements can be controlled to less than 1010 atoms cm−2.We have fabricated 0.2 μm channel length aerosol nanocrystal floating gate memory devices using conventional MOS ULSI processing on 200 mm wafers. The aerosol nanocrystal memory devices exhibit normal transistor characteristics with drive current 30 μA/μm, subthreshold slope 200 mV/dec, and drain induced barrier lowering 100 mV/V, typical values for thick gate dielectric high substrate doped nonvolatile memory devices. Uniform Fowler-Nordheim tunneling is used to program and erase these memory devices. Despite 5 nm tunnel oxides, threshold voltage shifts > 2 V have been achieved with microsecond program and millisecond erase times at moderate operating voltages. The aerosol devices also exhibit excellent endurance cyclability with no window closure observed after 105 cycles. Furthermore, reasonable disturb times and long nonvolatility are obtained, illustrating the inherent advantage of discrete nanocrystal charge storage. No drain disturb was detected even at drain biases of 4V, indicating that little or no charge conduction occurs in the nanocrystal layer. We have demonstrated promise for aerosol nanocrystal memory devices. However, numerous issues exist for the future of nanocrystal devices. These technology issues and challenges will be discussed as directions for future work.

Enhanced charge storage performance in AlTi4Ox/Al2O3multilayer charge trapping memory devices

2014 ◽  
Vol 53 (8S3) ◽  
pp. 08NG02 ◽  
Author(s):  
Changjie Gong ◽  
Xin Ou ◽  
Bo Xu ◽  
Xuexin Lan ◽  
Yan Lei ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Charge Storage ◽  
Memory Devices ◽  
Storage Performance ◽  
Charge Trapping Memory

Non-volatile transistor memory devices using charge storage cross-linked core–shell nanoparticles

2016 ◽  
Vol 52 (45) ◽  
pp. 7269-7272 ◽  
Author(s):  
Chen-Tsyr Lo ◽  
Yu Watanabe ◽  
Hiroshi Oya ◽  
Kazuhiro Nakabayashi ◽  
Hideharu Mori ◽  
...  
Keyword(s):  
High Performance ◽  
Charge Storage ◽  
Core Shell ◽  
Memory Devices ◽  
Shell Nanoparticles ◽  
Storage Materials ◽  
Solution Processable ◽  
Core Shell Nanoparticles ◽  
Hydrophilic Shell

Solution processable cross-linked nanoparticles with a cross-linked conjugated polythiophene core and a hydrophilic shell are firstly explored as charge storage materials for high performance transistor-type memory devices.

Molecular Memory Based on Nanowire–Molecular Wire Heterostructures

2007 ◽  
Vol 7 (1) ◽  
pp. 138-150 ◽  
Author(s):  
Chao Li ◽  
Bo Lei ◽  
Wendy Fan ◽  
Daihua Zhang ◽  
M. Meyyappan ◽  
...  
Keyword(s):  
Building Blocks ◽  
Molecular Wires ◽  
Charge Storage ◽  
Memory Devices ◽  
Molecular Wire ◽  
Molecular Memory ◽  
Nanoscale Device ◽  
Self Assembled ◽  
Novel Concept ◽  
Beyond Cmos

This article reviews the recent research of molecular memory based on self-assembled nanowire–molecular wire heterostructures. These devices exploit a novel concept of using redox-active molecules as charge storage flash nodes for nanowire transistors, and thus boast many advantages such as room-temperature processing and nanoscale device area. Various key elements of this technology will be reviewed, including the synthesis of the nanowires and molecular wires, and fabrication and characterization of the molecular memory devices. In particular, multilevel memory has been demonstrated using In2O3 nanowires with self-assembled Fe-bis(terpyridine) molecules, which serve to multiple the charge storage density without increasing the device size. Furthermore, in-depth studies on memory devices made with different molecules or with different functionalization techniques will be reviewed and analyzed. These devices represent a conceptual breakthrough in molecular memory and may work as building blocks for future beyond-CMOS nanoelectronic circuits.

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