In Situ Magnetic Field-Assisted Low Temperature Atmospheric Growth of GaN Nanowires via the Vapor–Liquid–Solid Mechanism

2013 ◽  
Vol 6 (1) ◽  
pp. 116-121 ◽  
Author(s):  
Jun Sik Kim ◽  
Bhaskar Chandra Mohanty ◽  
Chan Su Han ◽  
Seung Jun Han ◽  
Gwang Heon Ha ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Low Temperature ◽  
Vapor Liquid Solid ◽  
Gan Nanowires ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

Study on in-Situ Preparation and Growth Mechanism of TiCxN1-x Whiskers

2011 ◽  
Vol 197-198 ◽  
pp. 617-622
Author(s):  
Xue Wen Chong ◽  
Chuan Zhen Huang ◽  
Liang Xu ◽  
Bin Zou ◽  
Han Lian Liu ◽  
...  
Keyword(s):  
Growth Mechanism ◽  
Carbothermal Reduction ◽  
Reduction Process ◽  
Vapor Liquid Solid ◽  
Mixed Powder ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

TiCxN1-x whiskers were prepared using TiO2 and carbon mixed powder as the starting powder at the atmosphere of nitrogen by the carbothermal reduction process. NaCl and NiCl2 were added into the starting powder as the cosolvent and growth adds of impurities, respectively. An effect of the content of TiO2 and carbon in the starting powder on the TiCxN1-x whiskers was investigated. It is found from SEM and XRD observations that three types of TiCx N1-x whiskers are obtained when the different mol ratios of C and Ti are applied. The growth of whiskers is not only urged by the droplet on the top of whiskers, but also initiated by the helical dislocations. The growth of TiCxN1-x whiskers is controlled by the vapor-liquid-solid mechanism as well as vapor-solid mechanism.

Growth of GaN nanowires through a pyrolysis method with vapor–liquid–solid mechanism

2007 ◽  
Vol 201 (9-11) ◽  
pp. 5578-5581 ◽  
Author(s):  
Jie Zhan ◽  
Rujun Liu ◽  
Xiaopeng Hao ◽  
Xutang Tao ◽  
Minhua Jiang
Keyword(s):  
Vapor Liquid Solid ◽  
Gan Nanowires ◽  
Pyrolysis Method ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

scholarly journals Self-branching in GaN Nanowires Induced by a Novel Vapor-Liquid-Solid Mechanism

2007 ◽  
Vol 1058 ◽  
Author(s):  
Chang-Yong Nam ◽  
Douglas Tham ◽  
John E. Fischer
Keyword(s):  
Chemical Vapor ◽  
Building Blocks ◽  
Direct Reaction ◽  
Vapor Liquid Solid ◽  
Practical Applications ◽  
Gan Nanowires ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
And Migration ◽  
Vapor Liquid

ABSTRACTNanowires have great potential as building blocks for nanoscale electrical and optoelectronic devices. The difficulty in achieving functional and hierarchical nanowire structures poses an obstacle to realization of practical applications. While post-growth techniques such as fluidic alignment might be one solution, self-assembled structures during growth such as branches are promising for functional nanowire junction formation. In this study, we report vapor-liquid-solid (VLS) self-branching of GaN nanowires during AuPd-catalyzed chemical vapor deposition (CVD). This is distinct from branches grown by sequential catalyst seeding or vapor-solid (VS) mode. We present evidence for a VLS growth mechanism of GaN nanowires different from the well-established VLS growth of elemental wires. Here, Ga solubility in AuPd catalyst is limitless as suggested by a hypothetical pseudo-binary phase diagram, and the direct reaction between NH3 vapor and Ga in the liquid catalyst induce the nucleation and growth. The self-branching can be explained in the context of the proposed VLS scheme and migration of Ga-enriched AuPd liquid on Ga-stabilized polar surface of mother nanowires. This work is supported by DOE Grant No. DE-FG02-98ER45701.

Low-temperature homoepitaxial growth of α-SiC on on-axis (0001) substrate by vapor–liquid–solid mechanism

2006 ◽  
Vol 293 (2) ◽  
pp. 433-437 ◽  
Author(s):  
M. Soueidan ◽  
G. Ferro ◽  
B. Nsouli ◽  
F. Cauwet ◽  
L. Mollet ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Liquid Solid ◽  
Homoepitaxial Growth ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

How to Grow 3C-SiC Single Domain on α-SiC(0001) by Vapor-Liquid-Solid Mechanism

2007 ◽  
Vol 556-557 ◽  
pp. 187-190 ◽  
Author(s):  
Maher Soueidan ◽  
Olivier Kim-Hak ◽  
Gabriel Ferro ◽  
Patrick Chaudouët ◽  
Didier Chaussende ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Growth Temperature ◽  
General Rule ◽  
The Other ◽  
Heteroepitaxial Growth ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Mechanism ◽  
Si Content ◽  
Vapor Liquid

We report on the heteroepitaxial growth of 3C-SiC layers by Vapor-Liquid-Solid (VLS) mechanism on various α-SiC substrates, namely on- and off-axis for both 4H and 6H-SiC(0001), Si and C faces. The Si-Ge melts, which Si content was varied from 25 to 50 at%, were fed by 3 sccm of propane. The growth temperature was varied from 1200 to 1600°C. It was found that singledomain 3C-SiC layers can be obtained on 6H-SiC off and on-axis and 4H-SiC on-axis, while the other types of substrate gave twinned 3C-SiC material. As a general rule, one has to increase temperature when decreasing the Si content of the melt in order to avoid DPB formation. It was also found that twinned 3C-SiC layers form at low temperature while homoepitaxy is achieved at high temperature.

SiC Homoepitaxial Growth at Low Temperature by Vapor−Liquid−Solid Mechanism in Al−Si Melt

2003 ◽  
Vol 3 (3) ◽  
pp. 285-287 ◽  
Author(s):  
Christophe Jacquier ◽  
Gabriel Ferro ◽  
François Cauwet ◽  
D. Chaussende ◽  
Yves Monteil
Keyword(s):  
Low Temperature ◽  
Vapor Liquid Solid ◽  
Homoepitaxial Growth ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

scholarly journals Direct Evidence of Mg Incorporation Pathway in Vapor–Liquid–Solid Grown p-type Nonpolar GaN Nanowires

2014 ◽  
Vol 118 (41) ◽  
pp. 24165-24172 ◽  
Author(s):  
Avinash Patsha ◽  
S. Amirthapandian ◽  
Ramanathaswamy Pandian ◽  
Santanu Bera ◽  
Anirban Bhattacharya ◽  
...  
Keyword(s):  
Direct Evidence ◽  
Vapor Liquid Solid ◽  
Gan Nanowires ◽  
P Type ◽  
Nonpolar Gan ◽  
Vapor Liquid

Bulk synthesis of silicon nanowires using a low-temperature vapor–liquid–solid method

2001 ◽  
Vol 79 (10) ◽  
pp. 1546-1548 ◽  
Author(s):  
M. K. Sunkara ◽  
S. Sharma ◽  
R. Miranda ◽  
G. Lian ◽  
E. C. Dickey
Keyword(s):  
Low Temperature ◽  
Silicon Nanowires ◽  
Vapor Liquid Solid ◽  
Vapor Liquid
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