In Situ Precipitation of Te Nanoparticles in p-Type BiSbTe and the Effect on Thermoelectric Performance

2013 ◽  
Vol 5 (8) ◽  
pp. 3071-3074 ◽  
Author(s):  
Ting Zhang ◽  
Jun Jiang ◽  
Yukun Xiao ◽  
Yongbiao Zhai ◽  
Shenghui Yang ◽  
...  
Keyword(s):  
Thermoelectric Performance ◽  
P Type

Boosting thermoelectric performance of p-type SiGe alloys through in-situ metallic YSi2 nanoinclusions

Nano Energy ◽  
2016 ◽  
Vol 27 ◽  
pp. 282-297 ◽  
Author(s):  
Sajid Ahmad ◽  
Ajay Singh ◽  
Anil Bohra ◽  
Ranita Basu ◽  
Shovit Bhattacharya ◽  
...  
Keyword(s):  
Thermoelectric Performance ◽  
P Type

Toward high thermoelectric performance p-type FeSb2.2Te0.8via in situ formation of InSb nanoinclusions

2015 ◽  
Vol 3 (32) ◽  
pp. 8372-8380 ◽  
Author(s):  
Gangjian Tan ◽  
Hang Chi ◽  
Wei Liu ◽  
Yun Zheng ◽  
Xinfeng Tang ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Thermoelectric Materials ◽  
High Performance ◽  
Thermoelectric Performance ◽  
Electron Channel ◽  
Mobility Degradation ◽  
In Situ Formation ◽  
P Type

The InSb nanoinclusions formed in situ at the grain boundaries of FeSb2.2Te0.8 mitigates the mobility degradation while the added grain boundaries effectively scatter heat-carrying phonons. This novel “electron-channel phonon-barrier” nanocompositing approach opens a new route to design high performance thermoelectric materials.

In situ crystal-amorphous compositing inducing ultrahigh thermoelectric performance of p-type Bi0.5Sb1.5Te3 hybrid thin films

Nano Energy ◽  
2020 ◽  
Vol 78 ◽  
pp. 105379
Author(s):  
Ming Tan ◽  
Wei-Di Liu ◽  
Xiao-Lei Shi ◽  
Jin Shang ◽  
Hui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Performance ◽  
Hybrid Thin Films ◽  
P Type

Origins of the enhanced thermoelectric performance for p-type Ge1-xPbxTe alloys

2020 ◽  
Vol 596 ◽  
pp. 412397 ◽  
Author(s):  
T. Parashchuk ◽  
A. Shabaldin ◽  
O. Cherniushok ◽  
P. Konstantinov ◽  
I. Horichok ◽  
...  
Keyword(s):  
Thermoelectric Performance ◽  
P Type

Low-Temperature LPCVD MEMS Technologies

2002 ◽  
Vol 729 ◽  
Author(s):  
Roger T. Howe ◽  
Tsu-Jae King
Keyword(s):  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Rf Mems ◽  
Sige Layer ◽  
Copper Metallization ◽  
Si Films ◽  
P Type ◽  
Mems Process ◽  
Post Deposition

AbstractThis paper describes recent research on LPCVD processes for the fabrication of high-quality micro-mechanical structures on foundry CMOS wafers. In order to avoid damaging CMOS electronics with either aluminum or copper metallization, the MEMS process temperatures should be limited to a maximum of 450°C. This constraint rules out the conventional polycrystalline silicon (poly-Si) as a candidate structural material for post-CMOS integrated MEMS. Polycrystalline silicon-germanium (poly-SiGe) alloys are attractive for modular integration of MEMS with electronics, because they can be deposited at much lower temperatures than poly-Si films, yet have excellent mechanical properties. In particular, in-situ doped p-type poly-SiGe films deposit rapidly at low temperatures and have adequate conductivity without post-deposition annealing. Poly-Ge can be etched very selectively to Si, SiGe, SiO2 and Si3N4 in a heated hydrogen peroxide solution, and can therefore be used as a sacrificial material to eliminate the need to protect the CMOS electronics during the MEMS-release etch. Low-resistance contact between a structural poly-SiGe layer and an underlying CMOS metal interconnect can be accomplished by deposition of the SiGe onto a typical barrier metal exposed in contact windows. We conclude with directions for further research to develop poly-SiGe technology for integrated inertial, optical, and RF MEMS applications.

High Thermoelectric Performance of p-Type PbTe Enabled by the Synergy of Resonance Scattering and Lattice Softening

2021 ◽  
Author(s):  
Taras Parashchuk ◽  
Bartlomiej Wiendlocha ◽  
Oleksandr Cherniushok ◽  
Rafal Knura ◽  
Krzysztof T. Wojciechowski
Keyword(s):  
Resonance Scattering ◽  
Thermoelectric Performance ◽  
P Type ◽  
Lattice Softening

Realizing p-Type MoS2 with Enhanced Thermoelectric Performance by Embedding VMo2S4 Nanoinclusions

2017 ◽  
Vol 122 (2) ◽  
pp. 713-720 ◽  
Author(s):  
Shuang Kong ◽  
Tianmin Wu ◽  
Wei Zhuang ◽  
Peng Jiang ◽  
Xinhe Bao
Keyword(s):  
Thermoelectric Performance ◽  
P Type

The effects of Ge doping on the thermoelectric performance of p-type polycrystalline SnSe

RSC Advances ◽  
2016 ◽  
Vol 6 (115) ◽  
pp. 114825-114829 ◽  
Author(s):  
Tessera Alemneh Wubieneh ◽  
Cheng-Lung Chen ◽  
Pai Chun Wei ◽  
Szu-Yuan Chen ◽  
Yang-Yuan Chen
Keyword(s):  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
P Type ◽  
Ge Doping

Ge doping enables to enhance the thermoelectric figure of merit of SnSe..

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