Improved Electrical Performance of an Oxide Thin-Film Transistor Having Multistacked Active Layers Using a Solution Process

2012 ◽  
Vol 4 (8) ◽  
pp. 4001-4005 ◽  
Author(s):  
Deuk Jong Kim ◽  
Dong Lim Kim ◽  
You Seung Rim ◽  
Chul Ho Kim ◽  
Woong Hee Jeong ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Active Layers

scholarly journals Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimizing Channel Structure

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Zhuofa Chen ◽  
Dedong Han ◽  
Xing Zhang ◽  
Yi Wang
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Channel Structure ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Processing Temperature ◽  
Active Layers ◽  
Low Threshold ◽  
Channel Configuration

AbstractIn this paper, we investigated the performance of thin-film transistors (TFTs) with different channel configurations including single-active-layer (SAL) Sn-Zn-O (TZO), dual-active-layers (DAL) In-Sn-O (ITO)/TZO, and triple-active-layers (TAL) TZO/ITO/TZO. The TAL TFTs were found to combine the advantages of SAL TFTs (a low off-state current) and DAL TFTs (a high mobility and a low threshold voltage). The proposed TAL TFTs exhibit superior electrical performance, e.g. a high on-off state current ratio of 2 × 108, a low threshold voltage of 0.63 V, a high field effect mobility of 128.6 cm2/Vs, and a low off-state current of 3.3 pA. The surface morphology and characteristics of the ITO and TZO films were investigated and the TZO film was found to be C-axis-aligned crystalline (CAAC). A simplified resistance model was deduced to explain the channel resistance of the proposed TFTs. At last, TAL TFTs with different channel lengths were also discussed to show the stability and the uniformity of our fabrication process. Owing to its low-processing temperature, superior electrical performance, and low cost, TFTs with the proposed TAL channel configuration are highly promising for flexible displays where the polymeric substrates are heat-sensitive and a low processing temperature is desirable.

Electrophoretic displays driven by all-oxide thin-film transistor backplanes fabricated using a solution process

2015 ◽  
Vol 212 (10) ◽  
pp. 2133-2140 ◽  
Author(s):  
Satoshi Inoue ◽  
Tue Trong Phan ◽  
Tomoko Hori ◽  
Hiroaki Koyama ◽  
Tatsuya Shimoda
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Oxide Thin Film

Effects of high-k gate dielectrics on the electrical performance and reliability of an amorphous indium–tin–zinc–oxide thin film transistor (a-ITZO TFT): an analytical survey

Nanoscale ◽  
2019 ◽  
Vol 11 (48) ◽  
pp. 23459-23474 ◽  
Author(s):  
Taki Eddine Taouririt ◽  
Afak Meftah ◽  
Nouredine Sengouga ◽  
Marwa Adaika ◽  
Slimane Chala ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Dielectrics ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Zinc Oxide Thin Film ◽  
Dielectric Layers ◽  
High K ◽  
Different Types ◽  
Silvaco Atlas

This study is a numerical simulation obtained by using Silvaco Atlas software to investigate the effect of different types of dielectric layers, inserted between the channel and the gate, on the performance and reliability of an a-ITZO TFT.

P-9: High Performance Back Channel Etch Metal Oxide Thin-film Transistor with Double Active Layers

2016 ◽  
Vol 47 (1) ◽  
pp. 1151-1154 ◽  
Author(s):  
Jong-Heon Yang ◽  
Ji Hun Choi ◽  
Jae-Eun Pi ◽  
Hee-Ok Kim ◽  
Eun-Suk Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
High Performance ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Active Layers ◽  
Metal Oxide Thin Film

Effects of Double Active Layer and Acetic Acid Stabilizer on the Electrical Properties of a Solution-Processed Zinc Tin Oxide Thin-Film Transistor

2015 ◽  
Vol 15 (10) ◽  
pp. 7743-7747 ◽  
Author(s):  
Ji Hun Shin ◽  
Sang Jo Kim ◽  
Seung Soo Ha ◽  
Yong Jin Im ◽  
Chan Hee Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Acetic Acid ◽  
Active Layer ◽  
Tin Oxide ◽  
Solution Process ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Hydroxyl Groups ◽  
Zinc Tin Oxide

We investigated the effects of a double active layer (DAL) and acetic acid stabilizer on zinc tin oxide (ZTO) thin-film transistors (TFTs) fabricated using a solution process. The DAL was composed of two layers created by a ZTO solution doped with the same or different percentiles of an atomic Sn concentration (30 at.%, 60 at.%). The electrical performance of the ZTO TFTs significantly was improved after we added acetic acid (AA) instead of monoethanolamine (MEA). This was accomplished by applying a type 2 DAL (bottom layer: Sn 60 at.%, top layer: Sn 30 at.%, 60/30) instead of other types (30/30 or 60/60). It was demonstrated that AA plays a role in lowering the decomposition temperature, enhancing the metal-oxygen bridge, and decreasing hydroxyl groups in the film. In addition, the type 2 DAL structure (60/30) lowered the Ioff of the ZTO TFT and controlled the carrier concentration in the channel. The best performances were obtained at a Sn concentration of 60 at.% in the bottom ZTO layer and 30 at.% in the top ZTO layer, with AA added as a stabilizer. The ZTO TFT exhibited an on/off ratio of 1.1×109, a saturation mobility of 5.04 cm2/V·s, a subthreshold slope of 0.11 V/decade, and a threshold voltage of 1.6 V.

Improved Electrical Performance of SiO2-Doped Indium Zinc Oxide Thin-Film Transistor

2019 ◽  
Vol 19 (3) ◽  
pp. 1470-1473 ◽  
Author(s):  
Yooseong Lim ◽  
Namgyung Hwang ◽  
Jeongsuk Lee ◽  
Sehyeong Lee ◽  
Moonsuk Yi
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide

Bulk charge-transfer doping of amorphous metal oxide: fullerene blends for solution-processed amorphous indium zinc oxide thin-film transistors

2019 ◽  
Vol 7 (34) ◽  
pp. 10635-10641 ◽  
Author(s):  
Minh Nhut Le ◽  
Hyeongyeon Kim ◽  
Yeo Kyung Kang ◽  
Youngmin Song ◽  
Xugang Guo ◽  
...  
Keyword(s):  
Thin Film ◽  
Charge Transfer ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Solution Processed ◽  
Indium Zinc Oxide ◽  
Temperature Solution ◽  
Bulk Charge ◽  
Amorphous Metal Oxide

A facile bulk charge transfer doping method enabled electrical performance improvement of a low temperature solution processed thin film transistor.

Chemically robust solution-processed indium zinc oxide thin film transistors fabricated by back channel wet-etched Mo electrodes

RSC Advances ◽  
2016 ◽  
Vol 6 (58) ◽  
pp. 53310-53318 ◽  
Author(s):  
Da Eun Kim ◽  
Sung Woon Cho ◽  
Bora Kim ◽  
Jae Hui Shin ◽  
Won Jun Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Zinc Oxide Thin Film ◽  
Solution Processed ◽  
Robust Solution ◽  
Indium Zinc Oxide ◽  
Systematic Strategy ◽  
Izo Thin Film

We designed a systematic strategy for a chemically robust solution-processed IZO thin film transistor with back channel wet-etched Mo electrodes, which showed superior electrical performance and uniformity.

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