Large-Area Ohmic Top Contact to Vertically Grown Nanowires Using a Free-Standing Au Microplate Electrode

2012 ◽  
Vol 4 (4) ◽  
pp. 1860-1864 ◽  
Author(s):  
B. Radha ◽  
Deepak Jayaraj ◽  
G. U. Kulkarni ◽  
Stefan Heun ◽  
Daniele Ercolani ◽  
...  
Keyword(s):  
2020 ◽  
Vol 10 (17) ◽  
pp. 6064
Author(s):  
Lucía Herrer ◽  
Santiago Martín ◽  
Pilar Cea

The societal impact of the electronics industry is enormous—not to mention how this industry impinges on the global economy. The foreseen limits of the current technology—technical, economic, and sustainability issues—open the door to the search for successor technologies. In this context, molecular electronics has emerged as a promising candidate that, at least in the short-term, will not likely replace our silicon-based electronics, but improve its performance through a nascent hybrid technology. Such technology will take advantage of both the small dimensions of the molecules and new functionalities resulting from the quantum effects that govern the properties at the molecular scale. An optimization of interface engineering and integration of molecules to form densely integrated individually addressable arrays of molecules are two crucial aspects in the molecular electronics field. These challenges should be met to establish the bridge between organic functional materials and hard electronics required for the incorporation of such hybrid technology in the market. In this review, the most advanced methods for fabricating large-area molecular electronic devices are presented, highlighting their advantages and limitations. Special emphasis is focused on bottom-up methodologies for the fabrication of well-ordered and tightly-packed monolayers onto the bottom electrode, followed by a description of the top-contact deposition methods so far used.


2011 ◽  
Vol 5 (10-11) ◽  
Author(s):  
Tobias Sontheimer ◽  
Eveline Rudigier-Voigt ◽  
Matthias Bockmeyer ◽  
Carola Klimm ◽  
Peter Schubert-Bischoff ◽  
...  

2015 ◽  
Vol 127 (41) ◽  
pp. 12226-12231 ◽  
Author(s):  
Renhao Dong ◽  
Martin Pfeffermann ◽  
Haiwei Liang ◽  
Zhikun Zheng ◽  
Xiang Zhu ◽  
...  

2016 ◽  
Vol 163 (8) ◽  
pp. D447-D452 ◽  
Author(s):  
Yuyi Feng ◽  
Kwang-Dae Kim ◽  
Clayton A. Nemitz ◽  
Paul Kim ◽  
Thomas Pfadler ◽  
...  

2006 ◽  
Vol 965 ◽  
Author(s):  
Piero Cosseddu ◽  
Emanuele Orgiu ◽  
Annalisa Bonfiglio

ABSTRACTFully flexible and transparent all organic field effect transistors were fabricated by means of an innovative and inexpensive technique. A 1.8μm thick polyethylenetetherephtalate sheet, Mylar® (Du Pont), was used as gate dielectric and at the same time as mechanical support for the whole structure. We used pentacene, deposited by thermal sublimation, as semiconducting layer, whereas poly(ethylene-dioxythiophene)/polystyrene sulfonate (PEDOT/PSS) was used for the realization of the electrodes. Gate electrodes were realized by spin coating, while source and drain electrodes were patterned by micro-contact printing. We fabricated typical p-type field effect transistors, with mobilities up to 2 × 10−1cm2/Vs and Ion/Ioff up to 105, in a very simple and inexpensive way. It is worth to note that this technique allows the realization of bottom contact and top contact transistors. We realized both bottom contact and top contact devices on the same substrate and with the same active layer and we investigated how the structure itself and the active layer morphology influence the electrical properties in terms of hole mobility, Series Contact Resistance and parasitic capacitance effects. The comparison between top-contact and bottom-contact devices shows interesting marked differences that can be mainly attributed to a different PEDOT:PSS/semiconductor interface quality, influencing the most meaningful parameters. The flexibility of the obtained structure and the easy scalability of the technological process, suitable for roll to roll mass production processes, open the way for economic production of high-resolution organic devices


2010 ◽  
Vol 22 (4) ◽  
pp. 045603 ◽  
Author(s):  
Yu Zhang ◽  
Qian Sun ◽  
Benjamin Leung ◽  
John Simon ◽  
Minjoo Larry Lee ◽  
...  
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2008 ◽  
Vol 20 (23) ◽  
pp. 4470-4475 ◽  
Author(s):  
Kevin P. Musselman ◽  
Gregory J. Mulholland ◽  
Adam P. Robinson ◽  
Lukas Schmidt-Mende ◽  
Judith L. MacManus-Driscoll

2020 ◽  
Vol 9 (6) ◽  
pp. 064010 ◽  
Author(s):  
Eduard V. Monaico ◽  
Elena I. Monaico ◽  
Veaceslav V. Ursaki ◽  
Ion M. Tiginyanu
Keyword(s):  

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