Field-Effect Transistors Based on Thermally Treated Electron Beam-Induced Carbonaceous Patterns

2012 ◽  
Vol 4 (2) ◽  
pp. 1030-1036 ◽  
Author(s):  
Narendra Kurra ◽  
Venkata Srinu Bhadram ◽  
Chandrabhas Narayana ◽  
G. U. Kulkarni
Keyword(s):  
Electron Beam ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Thermally Treated

Electron beam modulation of GaAs metal‐semiconductor field‐effect transistors

1980 ◽  
Vol 37 (10) ◽  
pp. 943-945 ◽  
Author(s):  
H. H. Wieder ◽  
N. M. Davis ◽  
L. D. Flesner
Keyword(s):  
Electron Beam ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Beam Modulation

Field effect transistors and photodetectors based on nanocrystalline graphene derived from electron beam induced carbonaceous patterns

2012 ◽  
Vol 23 (42) ◽  
pp. 425301 ◽  
Author(s):  
Narendra Kurra ◽  
Venkata Srinu Bhadram ◽  
Chandrabhas Narayana ◽  
G U Kulkarni
Keyword(s):  
Electron Beam ◽  
Field Effect ◽  
Field Effect Transistors

scholarly journals Molybdenum Disulfide Field Effect Transistors under Electron Beam Irradiation and External Electric Fields

2020 ◽  
Vol 4 (1) ◽  
pp. 25
Author(s):  
Aniello Pelella ◽  
Alessandro Grillo ◽  
Enver Faella ◽  
Filippo Giubileo ◽  
Francesca Urban ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molybdenum Disulfide ◽  
Field Emission ◽  
Electric Fields ◽  
Field Effect ◽  
Electron Beam Irradiation ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Beam Irradiation ◽  
Back Gate

In this work, monolayer molybdenum disulfide (MoS2) nanosheets, obtained via chemical vapor deposition onto SiO2/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. We study their electric characteristics from 10−6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Moreover, Schottky metal contacts in monolayer molybdenum disulfide (MoS2) field-effect transistors (FETs) are investigated under electron beam irradiation conditions. It is shown that the exposure of Ti/Au source/drain electrodes to an electron beam reduces the contact resistance and improves the transistor performance. It is shown that e-beam irradiation lowers the Schottky barrier at the contacts due to thermally induced atom diffusion and interfacial reactions. The study demonstrates that electron beam irradiation can be effectively used for contact improvement though local annealing. It is also demonstrated that the application of an external field by a metallic nanotip induces a field emission current, which can be modulated by the voltage applied to the Si substrate back-gate. Such a finding, that we attribute to gate-bias lowering of the MoS2 electron affinity, enables a new field-effect transistor based on field emission.

Electric Field Characterization of Diamond Metal Semiconductor Field Effect Transistors Using Electron Beam Induced Current

2018 ◽  
Vol 924 ◽  
pp. 935-938
Author(s):  
Khaled Driche ◽  
Hitoshi Umezawa ◽  
Shinya Ohmagari ◽  
Hajime Okumura ◽  
Yoshiaki Mokuno ◽  
...  
Keyword(s):  
Electron Beam ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Depletion Region ◽  
Induced Current ◽  
Electron Beam Induced Current ◽  
Effect Transistor ◽  
Lateral Gate ◽  
P Type

Lateral gate depletion expansion towards drain contact has been analyzed on p-type diamond metal-semiconductor field effect transistor by electron beam induced current. The investigation was restricted to a closed channel to simplify the study and to directly observe the expansion of the lateral depletion region. The experimental data agreed with the theoretical model given in the literature.

scholarly journals ZnO nanowires and their application in field-effect transistors

2021 ◽  
Author(s):  
◽  
Conor Patrick Burke-Govey
Keyword(s):  
Electron Beam ◽  
High Temperature ◽  
Field Dependence ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Zno Nanowires ◽  
High Temperature Annealing ◽  
Zno Nanowire ◽  
Threshold Voltages

<p>ZnO nanowires have shown great promise as a semiconducting material for a variety of different electronic applications at the nanoscale, and can be easily synthesised at low temperatures using the hydrothermal growth method. However, efforts to reliably produce field-effect transistors (FETs) using ZnO nanowires have been hampered by excessive charge carriers, requiring high temperature annealing (≥400°C) at the expense of the low-temperature synthesis before field dependence is achieved. This thesis presents hydrothermally synthesised ZnO nanowires which can effectively be used as FETs in dry and liquid environments without requiring any annealing or post-growth processing.  The role of polyethylenimine (PEI) in the hydrothermal growth of vertical ZnO nanowires is thoroughly investigated. PEI is a polymer used to increase the aspect ratio of ZnO nanowires, but the molecular weight of the polymer and interactions with other growth precursors are often overlooked. Using 4 mM of PEI(MW = 1300 g/mol) results in hierarchical nanowires, consisting of large primary nanowires which abruptly terminate in thinner secondary nanowires. The secondary nanowires, with lengths of up to 10 m and diameters below 50 nm, are synthesised during a PEI-mediated secondary growth phase, where Zn-PEI complexes continue to provide Zn²⁺ ions after the bulk of the precursors have been exhausted.  The PEI-mediated synthesis of hierarchical nanowires is used to fabricate FETs by laterally growing intersecting networks of nanowires from spaced pairs of ZnO/Ti films, which have been patterned on SiO₂/Si device substrates. All of these FETs show marked field dependence between VG = -10 V to 10 V, despite being used without annealing. Typical on-off ratios are between 10³ - 10⁵, with threshold voltages between -7.5 V to 5 V. This is a significant result, as the majority of ZnO nanowire FETs reported in the literature require high temperature annealing. Persistent photoconductivity measurements indicate that surface states on the nanowires contribute to the intrinsic field dependence of the devices.  Hierarchical nanowires are also synthesised by modular primary and secondary hydrothermal growths. FETs fabricated using these hierarchical nanowires show less field dependence than PEI-mediated hierarchical nanowires, with limited function ality when used in air. The best FET measured in air operates with an on-off ratio of 10⁴ and a threshold voltage of ~ 0 V. Devices which are field-independent in air can be reliably gated by measuring the FETs in a wet environment, using de-ionised water as a dielectric. A back-gated wet FET operates with an on-off ratio of 105 and a threshold voltage of ~ 8 V. Top-gated wet FETs operate with on-off ratios within 103 - 104, and threshold voltages within 0.4 - 0.9 V. These devices also have significantly low subthreshold swings, on the order of 80 mV/decade.  FETs are fabricated by contacting individual ZnO nanowires using electron-beam lithography, although only one vertical ZnO nanowire shows field dependence, with an on-off ratio of 10⁴ and a threshold voltage of -7 V. A PEI-mediated hierarchical nanowire is also contacted and shows field dependence, with an on-off ratio of 10² and a threshold voltage of -6 V. The poor on-off ratio is caused by high leakage currents of the device. The contacted nanowires undergo dissolution over time, disappearing from the substrates after 8 months, and also exhibit a conducting-to-insulating transition over 48 hours. This transition can be temporarily reversed by exposure to an electron beam. Neither of these effects are reported in the literature, and their causes are speculated on.  Finally, the thesis concludes with proposals for future work to further the advances made here.</p>

Sign in / Sign up

Export Citation Format

Share Document