All Solution-Processed, Fully Transparent Resistive Memory Devices

2011 ◽  
Vol 3 (11) ◽  
pp. 4525-4530 ◽  
Author(s):  
Areum Kim ◽  
Keunkyu Song ◽  
Youngwoo Kim ◽  
Jooho Moon
2019 ◽  
Vol 7 (4) ◽  
pp. 843-852 ◽  
Author(s):  
Kui Zhou ◽  
Guanglong Ding ◽  
Chen Zhang ◽  
Ziyu Lv ◽  
Shenghuang Luo ◽  
...  

A memory device based on metal–oxo cluster-assembled materials demonstrates a redox-based resistive switching behaviour which is correlated with the migration of hydroxide ions with low activation energy.


ChemInform ◽  
2015 ◽  
Vol 46 (27) ◽  
pp. no-no
Author(s):  
Chaoliang Tan ◽  
Zhengdong Liu ◽  
Wei Huang ◽  
Hua Zhang

2019 ◽  
Vol 125 (9) ◽  
Author(s):  
Xiao Lin Wang ◽  
Chao Wen ◽  
Yuan Liu ◽  
T. P. Chen ◽  
Hai Yan Zhang ◽  
...  

2015 ◽  
Vol 44 (9) ◽  
pp. 2615-2628 ◽  
Author(s):  
Chaoliang Tan ◽  
Zhengdong Liu ◽  
Wei Huang ◽  
Hua Zhang

This tutorial review summarizes the recent progress in the rational design and preparation of solution-processed ultrathin 2D nanomaterials for non-volatile resistive memory devices.


2018 ◽  
Vol 54 ◽  
pp. 216-221 ◽  
Author(s):  
Huei-Yau Jeng ◽  
Tzu-Chien Yang ◽  
Li Yang ◽  
James G. Grote ◽  
Hsin-Lung Chen ◽  
...  

2021 ◽  
Vol 33 (23) ◽  
pp. 2170181
Author(s):  
Seungki Jo ◽  
Soyoung Cho ◽  
U Jeong Yang ◽  
Gyeong‐Seok Hwang ◽  
Seongheon Baek ◽  
...  

2013 ◽  
Vol 34 (2) ◽  
pp. 244-246 ◽  
Author(s):  
Jung-Kyu Lee ◽  
Sunghun Jung ◽  
Byeong-In Choe ◽  
Jinwon Park ◽  
Sung-Woong Chung ◽  
...  

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