Er-Doped ZnO Nanorod Arrays with Enhanced 1540 nm Emission By Employing Ag Island Films and High-Temperature Annealing

2011 ◽  
Vol 3 (4) ◽  
pp. 1009-1014 ◽  
Author(s):  
Jian-Wei Lo ◽  
Wei-Cheng Lien ◽  
Chin-An Lin ◽  
Jr-Hau He
Keyword(s):  
High Temperature ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
High Temperature Annealing ◽  
Doped Zno ◽  
Er Doped ◽  
Island Films

Er-Doped ZnO Nanorod Arrays with Enhanced IR Emission by Using Au Island Films

2011 ◽  
Vol 7 (2) ◽  
pp. 282-287 ◽  
Author(s):  
Jian-Wei Lo ◽  
Chin-An Lin ◽  
Jr-Hau He
Keyword(s):  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Doped Zno ◽  
Er Doped ◽  
Ir Emission ◽  
Island Films

Electronic Structures of Well-Aligned Er-Doped ZnO Nanorod Arrays

2011 ◽  
Vol 11 (12) ◽  
pp. 10615-10619 ◽  
Author(s):  
Cheng-Ying Chen ◽  
Kun-Yu Lai ◽  
Jian-Wei Lo ◽  
Chin-An Lin ◽  
Shu-Hsien Chiu ◽  
...  
Keyword(s):  
Electronic Structures ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Doped Zno ◽  
Er Doped

Aligned Er-Doped ZnO Nanorod Arrays with Enhanced 1.54 μm Infrared Emission

2008 ◽  
Vol 8 (7) ◽  
pp. 3363-3368 ◽  
Author(s):  
W. C. Yang ◽  
C. W. Wang ◽  
J. C. Wang ◽  
Y. C. Chang ◽  
H. C. Hsu ◽  
...  
Keyword(s):  
Deep Level ◽  
Synthesis Method ◽  
Infrared Emission ◽  
Structural Defects ◽  
Scale Production ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Doped Zno ◽  
Er Doped

Vertically aligned Er-doped ZnO nanorod arrays with sharp and intense 1.54 μm infrared emission have been fabricated on Si substrates through a well controlled spin-coating and annealing process. The synthesis method is advantageous for synthesizing ZnO nanostructures free from structural defects, capability for large-scale production, minimum equipment requirement and product homogeneity. Er atoms were found to incorporate into ZnO lattice from XRD, ESCA, TEM, STEM/EDS and PL measurements. The single-crystal Er-doped nanorods maintained their high microstructural quality after annealing for 4 hr at 800 °C. The intensity of 1.54 μm infrared emission was found to be correlated with the deep level green emission. The enhanced luminescence intensity and best ever narrow wavelength distribution of Er-doped ZnO nanorod arrays at 1.54 μm emission will be conductive to applications in optoelectronic devices and optical communications.

Nonstoichiometric Zinc Oxide Nanorod Arrays Doped Co or Ni as Effective Antimicrobial Materials

2012 ◽  
Vol 518-523 ◽  
pp. 760-763
Author(s):  
Chang Yun Chen ◽  
Quan Zhan Chen ◽  
Mei Shi ◽  
Feng Zhou ◽  
Chun Hua ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Functional Nanomaterials ◽  
Antimicrobial Materials ◽  
Doped Zno

Nonstoichiometric Zinc oxide (ZnO) nanorod arrays doped Co or Ni can be easily obtained by calicining soaked ZnO nanorod arrays. More importantly, the nonstoichiometric doped ZnO nanoarrays have more effective antimicrobial than pure ZnO nanoarrays, which means we can obtain a kind of promising new effective functional nanomaterials.

Effect of growth time to the properties of Al-doped ZnO nanorod arrays

2018 ◽  
Author(s):  
A. S. Ismail ◽  
M. H. Mamat ◽  
M. F. Malek ◽  
S. A. Saidi ◽  
M. M. Yusoff ◽  
...  
Keyword(s):  
Growth Time ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Doped Zno

Magnetic and optical properties of Co-doped ZnO nanorod arrays

2020 ◽  
Vol 135 (1) ◽  
Author(s):  
Wei Wang ◽  
Fuchun Zhang ◽  
Xiaoyang Wang ◽  
Shuili Zhang ◽  
Junfeng Yan ◽  
...  
Keyword(s):  
Optical Properties ◽  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Doped Zno ◽  
Co Doped
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