scholarly journals Compact Cavity-Enhanced Single-Photon Generation with Hexagonal Boron Nitride

ACS Photonics ◽  
2019 ◽  
Vol 6 (8) ◽  
pp. 1955-1962 ◽  
Author(s):  
Tobias Vogl ◽  
Ruvi Lecamwasam ◽  
Ben C. Buchler ◽  
Yuerui Lu ◽  
Ping Koy Lam
Keyword(s):  
Boron Nitride ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Photon Generation

scholarly journals First-Principles Identification of Single Photon Emitters Based on Carbon Clusters in Hexagonal Boron Nitride

2021 ◽  
Vol 125 (6) ◽  
pp. 1325-1335 ◽  
Author(s):  
Cesar Jara ◽  
Tomáš Rauch ◽  
Silvana Botti ◽  
Miguel A. L. Marques ◽  
Ariel Norambuena ◽  
...  
Keyword(s):  
Boron Nitride ◽  
First Principles ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Carbon Clusters ◽  
Single Photon Emitters

scholarly journals An ultrastable and robust single-photon emitter in hexagonal boron nitride

2020 ◽  
Vol 124 ◽  
pp. 114251
Author(s):  
Wei Liu ◽  
Yi-Tao Wang ◽  
Zhi-Peng Li ◽  
Shang Yu ◽  
Zhi-Jin Ke ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Photon ◽  
Hexagonal Boron Nitride

Photoinduced Modification of Single-Photon Emitters in Hexagonal Boron Nitride

ACS Photonics ◽  
2016 ◽  
Vol 3 (12) ◽  
pp. 2490-2496 ◽  
Author(s):  
Zav Shotan ◽  
Harishankar Jayakumar ◽  
Christopher R. Considine ◽  
Mažena Mackoit ◽  
Helmut Fedder ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Single Photon Emitters

Single-photon emission from two-dimensional hexagonal boron nitride annealed in a carbon-rich environment

2020 ◽  
Vol 117 (24) ◽  
pp. 244002
Author(s):  
Chao Lyu ◽  
Yaozheng Zhu ◽  
Pingfan Gu ◽  
Jiandong Qiao ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Photon Emission ◽  
Two Dimensional ◽  
Single Photon Emission

scholarly journals Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride

2020 ◽  
Author(s):  
Noah Mendelson ◽  
Dipankar Chugh ◽  
Jeffrey R. Reimers ◽  
Tin S. Cheng ◽  
Andreas Gottscholl ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Photon Emission ◽  
Single Photon Emission

scholarly journals Chemical Vapour Deposition of Hexagonal Boron Nitride for Two Dimensional Electronics

2018 ◽  
Vol 3 (3) ◽  
pp. 27-34 ◽  
Author(s):  
Balaji Sompalle ◽  
Jérôme Borme ◽  
Fátima Cerqueira ◽  
Tangyou Sun ◽  
Rui Campos ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Protective Coatings ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Chamber Pressure ◽  
Single Photon Emitters ◽  
Potential Applications ◽  
Grown Graphene

Hexagonal boron nitride (h-BN) has potential applications in protective coatings, single photon emitters and as substrate for graphene electronics. In this paper, we report on the growth of h-BN by chemical vapor deposition (CVD) using ammonia borane as the precursor. Use of CVD allows controlled synthesis over large areas defined by process parameters, e.g. temperature, time, process chamber pressure and gas partial pressures. Furthermore, independently grown graphene and h-BN layers are put together to realize enhancement in electronic properties of graphene.

Donor-Acceptor Pair Quantum Emitters in Hexagonal Boron Nitride

2021 ◽  
Author(s):  
Qinghai Tan ◽  
Jia-Min Lai ◽  
Xue-Lu Liu ◽  
Dan Guo ◽  
Yong-Zhou Xue ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Visible Spectrum ◽  
Conclusive Evidence ◽  
Fingerprint Matching ◽  
Acceptor Pair ◽  
Single Photon Emitters ◽  
Donor Acceptor ◽  
Quantum Emitters

Abstract Quantum emitters are needed for a myriad of applications ranging from quantum sensing to quantum computing. Hexagonal boron nitride (hBN) quantum emitters are the most promising solid-state platform to date due to its high brightness, stability, and the possibility of spin photon interface. However, the understanding of the physical origins of the single-photon emitters (SPEs) is still limited. Here, we present concrete and conclusive evidence that the dense SPEs in hBN, across entire visible spectrum, can be well explained by donor-acceptor pairs (DAPs). Based on the DAP transition generation mechanism, we have calculated their wavelength fingerprint, matching well with the experimentally observed photoluminescence spectrum. Our work serves as a step forward for the physical understanding of SPEs in hBN and their applications in quantum technologies.

scholarly journals Midgap radiative centers in carbon-enriched hexagonal boron nitride

2020 ◽  
Vol 117 (24) ◽  
pp. 13214-13219 ◽  
Author(s):  
Maciej Koperski ◽  
Diana Vaclavkova ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
Kostya S. Novoselov ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Near Infrared ◽  
Single Photon ◽  
Hexagonal Boron Nitride ◽  
Luminescence Spectra ◽  
Energy Structure ◽  
Defect States ◽  
Wide Bandgap Material ◽  
Single Photon Emitters ◽  
Far Ultraviolet

When serving as a protection tissue and/or inducing a periodic lateral modulation for/in atomically thin crystals, hexagonal boron nitride (hBN) has revolutionized the research on van der Waals heterostructures. By itself, hBN appears as an emergent wide-bandgap material, which, importantly, can be optically bright in the far-ultraviolet range and which frequently displays midgap defect-related centers of yet-unclear origin, but, interestingly, acting as single-photon emitters. Controlling the hBN doping is of particular interest in view of the possible practical use of this material. Here, we demonstrate that enriching hBN with carbon (C) activates an optical response of this material in the form of a series of well-defined resonances in visible and near-infrared regions, which appear in the luminescence spectra measured under below-bandgap excitation. Two, qualitatively different, C-related radiative centers are identified: One follows the Franck–Condon principle that describes transitions between two defect states with emission/annihilation of optical phonons, and the other shows atomic-like resonances characteristic of intradefect transitions. With a detailed characterization of the energy structure and emission dynamics of these radiative centers, we contribute to the development of controlled doping of hBN with midgap centers.

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