High-Brightness Polarized Green InGaN/GaN Light-Emitting Diode Structure with Al-Coated p-GaN Grating

ACS Photonics ◽  
2016 ◽  
Vol 3 (10) ◽  
pp. 1912-1918 ◽  
Author(s):  
Guogang Zhang ◽  
Xu Guo ◽  
Fang-Fang Ren ◽  
Yi Li ◽  
Bin Liu ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Diode Structure ◽  
High Brightness ◽  
Light Emitting

(Invited) High Brightness, Large Scale GaN Based Light-Emitting Diode Grown on 8-Inch Si Substrate

2014 ◽  
Vol 61 (4) ◽  
pp. 71-78
Author(s):  
S.-J. Lee ◽  
H.-J. Park ◽  
J.-B. Park ◽  
D.-W. Jeon ◽  
J. H. Baek ◽  
...  
Keyword(s):  
Large Scale ◽  
Light Emitting Diode ◽  
Si Substrate ◽  
High Brightness ◽  
Light Emitting

High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolarm-plane Bulk GaN Substrate

2007 ◽  
Vol 46 (No. 40) ◽  
pp. L960-L962 ◽  
Author(s):  
Kenji Iso ◽  
Hisashi Yamada ◽  
Hirohiko Hirasawa ◽  
Natalie Fellows ◽  
Makoto Saito ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
High Brightness ◽  
Light Emitting ◽  
Bulk Gan

Novel High-Radiance Surface-Emitting Light Emitting Diode Structure with Circular 45° Corner Reflector and Microlens

2001 ◽  
Vol 40 (Part 1, No. 4B) ◽  
pp. 2741-2746 ◽  
Author(s):  
Eun-Hyun Park ◽  
Moon-Jung Kim ◽  
Jung-Ho Cha ◽  
Young-Se Kwon
Keyword(s):  
Light Emitting Diode ◽  
Diode Structure ◽  
Corner Reflector ◽  
Light Emitting

Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure

2018 ◽  
Vol 112 (5) ◽  
pp. 052105 ◽  
Author(s):  
Guijuan Zhao ◽  
Lianshan Wang ◽  
Huijie Li ◽  
Yulin Meng ◽  
Fangzheng Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Light Emitting Diode ◽  
Green Light ◽  
Diode Structure ◽  
Structural And Optical Properties ◽  
Light Emitting

Spatial Inhomogeneity of Photoluminescence in an InGaN-Based Light-Emitting Diode Structure Probed by Near-Field optical Microscopy Under Illumination-Collection Mode

2001 ◽  
Vol 40 (Part 1, No. 1) ◽  
pp. 110-111 ◽  
Author(s):  
Akio Kaneta ◽  
Tomoaki Izumi ◽  
Koichi Okamoto ◽  
Yoichi Kawakami ◽  
Shigeo Fujita ◽  
...  
Keyword(s):  
Optical Microscopy ◽  
Light Emitting Diode ◽  
Near Field ◽  
Diode Structure ◽  
Spatial Inhomogeneity ◽  
Light Emitting

Photoreflectance symmetry and amplitude study of quantum dots in microcavity light emitting diode structure: The cavity-ground state exciton resonance

2007 ◽  
Vol 101 (2) ◽  
pp. 024511
Author(s):  
G. Rainò ◽  
M. De Giorgi ◽  
M. T. Todaro ◽  
M. De Vittorio ◽  
V. Tasco ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Ground State ◽  
Light Emitting Diode ◽  
Diode Structure ◽  
Exciton Resonance ◽  
Light Emitting

Dynamical X-ray Rocking curve Simulations of InGaAsP/InP Double Heterostruciures using Abeles' Matrix Method

1986 ◽  
Vol 90 ◽  
Author(s):  
A. T. Macrander ◽  
B. M. Glasgow ◽  
E. R. Minami ◽  
R. F. Karlicek ◽  
D. L. Mitcham ◽  
...  
Keyword(s):  
Active Layer ◽  
Vapor Phase ◽  
Matrix Method ◽  
Light Emitting Diode ◽  
Vapor Phase Epitaxy ◽  
Diode Structure ◽  
Rocking Curve ◽  
Light Emitting ◽  
X Ray

ABSTRACTSimulated rocking curves for a light-emitting diode structure are presented. Results for a structure containing uniform layers are compared to rocking curve data for a wafer grown by vapor phase epitaxy (VPE), and we conclude from the comparison that the VPE wafer closely approached the hypothetical ideal assumed in the simulations. Simulations illustrating difficulties in analyses and the effects of a graded active layer are also presented.

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