scholarly journals Efficient 10-Fold Upconversion through Steady-State Non-Thermal-Equilibrium Excitation

ACS Photonics ◽  
2016 ◽  
Vol 3 (2) ◽  
pp. 174-178 ◽  
Author(s):  
Dafna Granot ◽  
Nimrod Kruger ◽  
Assaf Manor ◽  
Carmel Rotschild
1977 ◽  
Vol 32 (7) ◽  
pp. 697-703
Author(s):  
Fr. Kaiser

Abstract The Peierls-Boltzmann transport equation for phonons, which was re-formulated and modified in a previous paper, is extended to be applicable to arbitrary interactions and phonon processes. As a rule, it turns out that only two types of steady state solutions are possible: hysteresis and threshold. These two solutions reveal the possibility of “transport phase transitions”, i. e. a transition from the “thermodynamic” branch to a “nonthermodynamic” one via a cumulative excitation. It is shown that both the threshold and the hysteresis situation exhibit pronounced analogies to phase transi­tions in thermal equilibrium. The dependence of the steady states from the relevant parameters is discussed.


1975 ◽  
Vol 14 (70) ◽  
pp. 125-136 ◽  
Author(s):  
R. H. Thomas

Holes drilled into thin areas of the Brunt Ice Shelf encounter a layer of liquid brine less than 1 m thick approximately at sea-level. Assuming the brine to be moving horizontally, analysis of its effects on thermal equilibrium gives an estimate of steady-state annual brine flow that is in good agreement with the value deduced from a percolation model. The effect of firn density on percolation rates is such that the slope of an active brine layer increases rapidly as ice thickness increases. However, the heat transport model predicts that brine layers are unlikely to be active in both very thick and very thin ice shelves.


1975 ◽  
Vol 30 (12) ◽  
pp. 1563-1571 ◽  
Author(s):  
Michio Nishida

Abstract The distributions of populations of helium atoms in a source flow expansion were calculated for the two different conditions Te = 7500K, Ne = 1014cm-3 and Te = 5000 K, Ne = 1013cm-3. The populations in the levels higher than n = 20 were taken to be in locally thermal equilibrium with the electrons. The steady state consideration was applied to the populations of the levels from n = 7 to n = 19. For the levels lower than n=6 the expansion flow term was included. The results show that the calculated population densities of the lower levels deviate greatly from those estimated from the steady state consideration.


Author(s):  
Shimry Haviv ◽  
Dafna Granot ◽  
Nimrod Kruger ◽  
Assaf Manor ◽  
Tamilarasan Sabapathy ◽  
...  

1975 ◽  
Vol 14 (70) ◽  
pp. 125-136 ◽  
Author(s):  
R. H. Thomas

Holes drilled into thin areas of the Brunt Ice Shelf encounter a layer of liquid brine less than 1 m thick approximately at sea-level. Assuming the brine to be moving horizontally, analysis of its effects on thermal equilibrium gives an estimate of steady-state annual brine flow that is in good agreement with the value deduced from a percolation model. The effect of firn density on percolation rates is such that the slope of an active brine layer increases rapidly as ice thickness increases. However, the heat transport model predicts that brine layers are unlikely to be active in both very thick and very thin ice shelves.


2011 ◽  
Vol 1327 ◽  
Author(s):  
Walid A. Hadi ◽  
Michael Shur ◽  
Lester F. Eastman ◽  
Stephen K. O’Leary

ABSTRACTWe briefly review some recent results on the steady-state and transient electron transport that occurs within bulk wurtzite zinc oxide. These results were obtained using an ensemble semi-classical three-valley Monte Carlo simulation approach. They showed that for electric field strengths in excess of 180 kV/cm, the steady-state electron drift velocity associated with bulk wurtzite zinc oxide exceeds that associated with bulk wurtzite gallium nitride. The transient electron transport that occurs within bulk wurtzite zinc oxide was studied by examining how electrons, initially in thermal equilibrium, respond to the sudden application of a constant electric field. These transient electron transport results demonstrated that for devices with dimensions smaller than 0.1 μm, gallium nitride based devices will offer the advantage, owing to their superior transient electron transport, while for devices with dimensions greater than 0.1 μm, zinc oxide based devices will offer the advantage, owing to their superior high-field steady-state electron transport.


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