Photoexcited Free Carrier Dynamics in Bi2Se3, (Bi0.75In0.25)2Se3, and (Bi0.50In0.50)2Se3: From Topological to Band Insulator

ACS Photonics ◽  
2020 ◽  
Vol 7 (10) ◽  
pp. 2778-2786
Author(s):  
Teng Shi ◽  
Kateryna Kushnir ◽  
Zhengtianye Wang ◽  
Stephanie Law ◽  
Lyubov V. Titova
2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xuejian Ma ◽  
Fei Zhang ◽  
Zhaodong Chu ◽  
Ji Hao ◽  
Xihan Chen ◽  
...  

AbstractThe outstanding performance of organic-inorganic metal trihalide solar cells benefits from the exceptional photo-physical properties of both electrons and holes in the material. Here, we directly probe the free-carrier dynamics in Cs-doped FAPbI3 thin films by spatiotemporal photoconductivity imaging. Using charge transport layers to selectively quench one type of carriers, we show that the two relaxation times on the order of 1 μs and 10 μs correspond to the lifetimes of electrons and holes in FACsPbI3, respectively. Strikingly, the diffusion mapping indicates that the difference in electron/hole lifetimes is largely compensated by their disparate mobility. Consequently, the long diffusion lengths (3~5 μm) of both carriers are comparable to each other, a feature closely related to the unique charge trapping and de-trapping processes in hybrid trihalide perovskites. Our results unveil the origin of superior diffusion dynamics in this material, crucially important for solar-cell applications.


2021 ◽  
Author(s):  
Kateryna Kushnir ◽  
Teng Shi ◽  
Zhengtianye Wang ◽  
Stephanie Law ◽  
Lyubov Titova

2018 ◽  
Vol 30 (48) ◽  
pp. 485403 ◽  
Author(s):  
R Kemmler ◽  
R Hübner ◽  
A Löhle ◽  
D Neubauer ◽  
I Voloshenko ◽  
...  

Author(s):  
Toshiaki Hattori ◽  
Takeshi Yogi ◽  
Yoshikazu Hama ◽  
Naoki Watanabe

1995 ◽  
Vol 378 ◽  
Author(s):  
P. M. Fauchet ◽  
G. W. Wicks ◽  
Y. Kostoulas ◽  
A. I. Lobad ◽  
K. B. Ucer

AbstractThe presence of point defects is expected to influence the properties of free carrier in semiconductors. We have used the techniques of ultrafast laser spectroscopy to characterize the dynamics of photoinjected carriers in several III–V semiconductors grown at low temperature. The initial scattering time and the lifetime of the carriers become very short at low growth temperatures. Results obtained with low-temperature grown III–Vs are compared to those obtained with III–Vs grown at normal temperatures and amorphous silicon.


2009 ◽  
Vol 105 (2) ◽  
pp. 023707 ◽  
Author(s):  
H. Ahn ◽  
C.-H. Chuang ◽  
Y.-P. Ku ◽  
C.-L. Pan

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