Resonance absorption mechanism-based metasurface absorbers can realize perfect optical absorption. Further, all-dielectric metasurface absorbers have more extensive applicability than metasurface absorbers that contain metal components. However, the absorption peaks of the all-dielectric metasurface absorbers reported to date are very sharp. In this work, we propose a broadband optical absorption all-dielectric metasurface, where a unit cell of this metasurface is composed of two coupled subwavelength semiconductor resonators arrayed in the direction of the wave vector and embedded in a low-index material. The results indicate that the peak absorption for more than 99% is achieved across a 60 nm bandwidth in the short-wavelength infrared region. This absorption bandwidth is three times that of a metasurface based on the conventional design scheme that consists of only a single layer of semiconductor resonators. Additionally, the coupled semiconductor resonator-based all-dielectric metasurface shows robust perfect absorption properties when the geometrical and material parameters—including the diameter, height, permittivity, and loss tangent of the resonator and the vertical and horizontal distances between the two centers of the coupled resonators—are varied over a wide range. With the convenience of use of existing semiconductor technologies in micro/nano-processing of the surface, this proposed broadband absorption all-dielectric metasurface offers a path toward realizing potential applications in numerous optical devices.
Angle-insensitive narrowband optical absorption based on high-Q localized resonance