scholarly journals Role of Polymorphism and Thin-Film Morphology in Organic Semiconductors Processed by Solution Shearing

ACS Omega ◽  
2018 ◽  
Vol 3 (2) ◽  
pp. 2329-2339 ◽  
Author(s):  
Sergi Riera-Galindo ◽  
Adrián Tamayo ◽  
Marta Mas-Torrent
2007 ◽  
Vol 120 (2) ◽  
pp. 439-446 ◽  
Author(s):  
J. RaviPrakash ◽  
A.H. McDaniel ◽  
M. Horn ◽  
L. Pilione ◽  
P. Sunal ◽  
...  

2013 ◽  
Vol 102 (17) ◽  
pp. 173302 ◽  
Author(s):  
Wing C. Tsoi ◽  
Weimin Zhang ◽  
Joseph Razzell Hollis ◽  
Minwon Suh ◽  
Martin Heeney ◽  
...  

2019 ◽  
Vol 31 (17) ◽  
pp. 6962-6970 ◽  
Author(s):  
Andrew M. Zeidell ◽  
Laura Jennings ◽  
Conerd K. Frederickson ◽  
Qianxiang Ai ◽  
Justin J. Dressler ◽  
...  

ACS Nano ◽  
2011 ◽  
Vol 5 (4) ◽  
pp. 2895-2907 ◽  
Author(s):  
Christopher Forrey ◽  
Kevin G. Yager ◽  
Samuel P. Broadaway

Polymers ◽  
2021 ◽  
Vol 13 (3) ◽  
pp. 402
Author(s):  
Zhengran He ◽  
Ziyang Zhang ◽  
Kyeiwaa Asare-Yeboah ◽  
Sheng Bi ◽  
Jihua Chen ◽  
...  

In this study, we demonstrated for the first time that a metal-containing semicrystalline polymer was used as an additive to mediate the thin film morphology of solution-grown, small-molecule organic semiconductors. By mixing polyferrocenylsilane (PFS) with an extensively-studied organic semiconductor 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene), PFS as a semicrystalline polymer independently forms nucleation and crystallization while simultaneously ameliorating diffusivity of the blend system and tuning the surface energies as a result of its partially amorphous property. We discovered that the resultant blend film exhibited a 6-fold reduction in crystal misorientation angle and a 3-fold enlargement in average grain width. Enhanced crystal orientation considerably reduces mobility variation, while minimized defects and trap centers located at grain boundaries lessen the adverse impact on the charge transport. Consequently, bottom-gate, top-contact organic thin film transistors (OTFTs) based on the TIPS pentacene/PFS mixture yielded a 40% increase in performance consistency (represented by the ratio of average mobility to the standard deviation of mobility). The PFS semicrystalline polymer-controlled crystallization can be used to regulate the thin film morphology of other high-performance organic semiconductors and shed light on applications in organic electronic devices.


Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.


2018 ◽  
Author(s):  
Weikun Zhu ◽  
Erfan Mohammadi ◽  
Ying Diao

Morphology modulation offers significant control over organic electronic device performance. However, morphology quantification has been rarely carried out via image analysis. In this work, we designed a MATLAB program to evaluate two key parameters describing morphology of small molecule semiconductor thin films: fractal dimension and film coverage. We then employ this program in a case study of meniscus-guided coating of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C<sub>8</sub>-BTBT) under various conditions to analyze a diverse and complex morphology set. The evolution of morphology in terms of fractal dimension and film coverage was studied as a function of coating speed. We discovered that combined fractal dimension and film coverage can quantitatively capture the key characteristics of C<sub>8</sub>-BTBT thin film morphology; change of these two parameters further inform morphology transition. Furthermore, fractal dimension could potentially shed light on thin film growth mechanisms.


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