scholarly journals Surface Structure-Dependent Low Turn-On Electron Field Emission from Polypyrrole/Tin Oxide Hybrid Cathodes

ACS Omega ◽  
2017 ◽  
Vol 2 (11) ◽  
pp. 7515-7524 ◽  
Author(s):  
Ishpal Rawal ◽  
Lalit Kumar ◽  
Ravi Kant Tripathi ◽  
Omvir Singh Panwar
2000 ◽  
Vol 15 (1) ◽  
pp. 212-217 ◽  
Author(s):  
Qing Zhang ◽  
S. F. Yoon ◽  
J. Ahn ◽  
Bo Gan ◽  
Rusli

The influence of the carbon network structure of polycrystalline diamond films that were prepared from a mixture of H2, CH4, and N2 using microwave-enhanced plasma chemical vapor deposition on electron field emission has been systematically investigated. With increasing nitrogen gas flow ratio of [ N2]/[H2 + CH4 + N2], the film hardness and surface roughness of the as-grown films decreased, and the concentration ratio of amorphous sp2-bonded carbon clusters and mixed sp2−sp3 carbon structures to tetrahedrally bonded amorphous carbon phases increased. Correspondingly, the turn-on voltage for electron emission decreased. After the surface post-treatment by pure hydrogen plasma exposure, the concentration ratio was clearly found to have increased dramatically and the turn-on voltage decreased significantly for the films produced at small nitrogen flow ratio. Our results suggest that the influence of the concentration ratio on electron field emission is much more significant than that of the surface roughness of the polycrystalline diamond films studied in this paper.


2005 ◽  
Vol 901 ◽  
Author(s):  
Devon McClain ◽  
Mason DeRoss ◽  
Noel Tavan ◽  
Jun Jiao ◽  
Coralee M McCarter ◽  
...  

AbstractArrays of multi-walled carbon nanotunbe (CNT) bundles were fabricated on silicon [100] substrate with iron-nitrate sol-gel catalyst patterned via standard photolithographic techniques. Nanotube bundles with diameters ranging from 400µm to 15µm were grown in a chemical vapor deposition reactor and electrically characterized using a scanning-anode probe apparatus. Results showed a relatively low number of graphitic layers in individual nanotubes and a definite increase in field emission performance with decreasing bundle diameter. A 400µm wide matt of CNTs yielded a turn-on field of 6.7 V/µm and field enhancement of 602 while 15µm bundles performed significantly better with turn-on fields of 1.6 V/µm and field enhancement factors of 2425. The overall trend strongly suggests that the field emission character of CNT based aggregate structures such as those presented here is proportional to their aspect ratio.


2003 ◽  
Vol 798 ◽  
Author(s):  
Hock M. Ng ◽  
Jonathan Shaw ◽  
Aref Chowdhury ◽  
Nils G. Weimann

ABSTRACTElectron field emission was measured from GaN nanotip pyramids formed by polarity-selective chemical etching in KOH solution. The GaN samples were grown by plasma-assisted molecular beam epitaxy and consisted of regions of Ga- and N-polar GaN grown at the same time. The pyramids were formed only in the N-polar regions and have extremely sharp tips with diameters estimated to be less than 20 nm. Field emission measurements showed a characteristic Fowler-Nordheim behavior. The average turn-on field was 1.6 V/μm with a corresponding normalized field enhancement factor of about 1500.


1996 ◽  
Vol 423 ◽  
Author(s):  
J Robertson ◽  
S R P Silva ◽  
G A J Amaratunga ◽  
W I Milne

AbstractThe low electron affinity of a-C:H is related to that of diamond surfaces and is studied using a chemical bonding model. The electron field emission from hydrogenated amorphous carbon (a-C:H) and nitrogen modified a-C:H showing low turn on fields are described. Nitrogen improves the field emission, apparently by raising the Fermi level.


1997 ◽  
Vol 468 ◽  
Author(s):  
D. P. Malta ◽  
G. G. Fountain ◽  
J. B. Posthill ◽  
T. P. Humphreys ◽  
C. Pettenkofer ◽  
...  

ABSTRACTAlN has been identified as a candidate material for cold cathode field emitters due to its purported negative electron affinity (NEA) surface. Recent studies by our group on AlN(0001) using angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) and scanning electron microscopy (SEM) have indicated that AlN(0001) is a positive electron affinity surface. We have also investigated electron field emission behavior of AlN and pure Al films grown on Si. AlN and Al films were grown by molecular beam epitaxy (MBE) and transported via an ultra-high vacuum (UHV) integrated processing system (IPS) to an electron emission measurement system (EEMS). The reference Al film on Si showed characteristic Fowler-Nordheim behavior with a turn-on field of 120V/μm (defined at 10μA-cm-2) and ∼100μA-cm-2 emission at 140V/μm. The AlN film also showed Fowler-Nordheim behavior with a turn-on field of 60V/μm and ∼10mA-cm-2 at 100V/μm. Air exposure of the AlN film caused a shift in turn-on to 90V/μm and ∼0.1mA-cm-2 at 100V/μm. The I-V behavior of the AlN film is consistent with the ARUPS results on a different AlN sample - both indicating a positive electron affinity AlN surface.


2003 ◽  
Vol 18 (11) ◽  
pp. 2708-2716 ◽  
Author(s):  
S. Gupta ◽  
B.R. Weiner ◽  
G. Morell

Results are reported on the electron field emission properties of microcrystalline diamond thin films grown on molybdenum substrates by the sulfur (S)-assisted hot-filament chemical vapor deposition technique using methane (CH4), hydrogen sulfide (H2S), and hydrogen (H2) gas mixtures. Electron field-emission measurements revealed that the S-incorporated microcrystalline diamond thin films have substantially lower turn-on fields and steep rising currents as compared to those grown without sulfur. The field-emission properties for the S-incorporated films were also investigated systematically as a function of substrate temperature (TS). Lowest turn-on field achieved was observed at around 12.5 V/μm for the samples grown at TS of 700°C with 500 ppm H2S. To establish the property-structure correlation, we analyzed the films with multiple characterizations include scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy (RS), and x-ray photoelectron spectroscopy (XPS) techniques. It was found that sulfur addition causes significant microstructural changes in microcrystalline diamond thin films. S-assisted films show smoother, coarse-grained surfaces (non-faceted) than those grown without it (well-faceted) and a relatively higher content of non-diamond carbon (primarily sp2-bonded C). RS and investigations on the morphology by SEM and AFM indicated the increase of sp2 C content with increasing TS followed by a morphological transition at 700°C in the films. XPS investigations also showed the incorporation of S in the films up to a few atomic layers. It is believed that the electron-emission properties are governed by the sulfur incorporation during the chemical vapor deposition process. Although most of the S is expected to be electrically inactive, under the high doping conditions hereby used, it is shown rather indirectly through multiple characterizations that there may be some amount of S in donor states. Therefore the results are discussed in terms of the dual role of S whereby it induces the structural defects in the form of enhanced sp2 C content at the expense of diamond quality and a possibility of availability of conduction electrons. In fact the latter finding is supported through room temperature electrical conductivity measurements.


2000 ◽  
Vol 638 ◽  
Author(s):  
S. Gupta ◽  
B. R. Weiner ◽  
B. L. Weiss ◽  
G. Morell ◽  
Kenyetta Johnson ◽  
...  

AbstractResults are reported on the electron field emission properties of intrinsic and S- incorporated nanocrystalline carbon (n-C:S) thin films grown on molybdenum substrates by hotfilament CVD technique from methane-hydrogen (CH4/H2) and hydrogen sulphide-hydrogen (H2S/H2) gas pre mixtures respectively. The field emission properties for the S-incorporated films were investigated as a function of substrate temperature (TS). Lowest turn-on field was observed at 4.5 V/μm for one of the sample, which was grown at 900 °C, demonstrating the effect of sulfur addition. The S-incorporation also causes microstructural and structural changes, as characterized with ex situ techniques such as SEM, AFM and Raman spectroscopy (RS). Sassisted films show smoother surfaces and finer-grained than those grown without it. The electron field emission properties of S-assisted films is also compared to the film grown without it (intrinsic) at a particular deposition temperature and the turn-on field was found to be almost half for the S-assisted film than for the non S-assisted film. The influence of growth temperature was also conducted and an inverse correlation was found with the turn-on field (Ec). These studies were performed in order attempt to “tailor-the-material” as a viable cold cathode material by introducing the defecTS and altering the electronic structure.


2011 ◽  
Vol 49 (4) ◽  
pp. 342-347
Author(s):  
Kyoungwan Park ◽  
Seungman An ◽  
Taekyung Yim ◽  
Kyungsu Lee ◽  
Jeongho Kim ◽  
...  

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