scholarly journals Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment

ACS Omega ◽  
2017 ◽  
Vol 2 (1) ◽  
pp. 1-10 ◽  
Author(s):  
Rossella Porrazzo ◽  
Alessandro Luzio ◽  
Sebastiano Bellani ◽  
Giorgio Ernesto Bonacchini ◽  
Yong-Young Noh ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Aqueous Environment ◽  
Organic Field Effect Transistors

Development of high-performance printed organic field-effect transistors and integrated circuits

2015 ◽  
Vol 17 (40) ◽  
pp. 26553-26574 ◽  
Author(s):  
Yong Xu ◽  
Chuan Liu ◽  
Dongyoon Khim ◽  
Yong-Young Noh
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Transistors ◽  
Organic Field Effect Transistors

In this perspective article, we provide a recent overview of the route to realize high-performance printed organic transistors and integrated circuits.

Control of Electronic Properties of Organic Semiconductor

2011 ◽  
Vol 287-290 ◽  
pp. 725-728
Author(s):  
Ke Jie Tan ◽  
Ke Ke Zhang ◽  
Shu Qin Liang ◽  
Wai Hoong Kan ◽  
Subodh G Mhaisalkar ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Electronic Properties ◽  
Single Crystals ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Copper Phthalocyanine ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Crystal Field Effect ◽  
High Efficient

The electronic properties of organic field effect transistors limit the efficiency of integrated circuits build on basis of printed organic semiconductors. In order to control the mobility of high efficient semiconductors, like rubrene, tetracene, tetracyanoquinodimethane (TCNQ), copper phthalocyanine and many others, single-crystal field-effect transistors have been prepared on surfaces of single crystals and characteristics have been measured. The highest mobility has been measured on rubrene single crystals. The mobility of as-grown crystals measured by air-gap field effect transistor is in the range of 10 cm2/Vs but falls below 1 cm2/Vs during reduction. It was observed that the measured mobility depends on the dielectric used for field effect transistors.

Organic field-effect transistors and all-polymer integrated circuits

1999 ◽  
Vol 12 (2-3) ◽  
pp. 189-197 ◽  
Author(s):  
M. Matters ◽  
D.M. de Leeuw ◽  
M.J.C.M. Vissenberg ◽  
C.M. Hart ◽  
P.T. Herwig ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

Advances in organic field-effect transistors and integrated circuits

2009 ◽  
Vol 52 (11) ◽  
pp. 3105-3116 ◽  
Author(s):  
Hong Wang ◽  
ZhuoYu Ji ◽  
Ming Liu ◽  
LiWei Shang ◽  
Ge Liu ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors
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