scholarly journals QM/MM Study of the Fosfomycin Resistance Mechanism Involving FosB Enzyme

ACS Omega ◽  
2021 ◽  
Author(s):  
Anderson H. Lima ◽  
José Rogério A. Silva ◽  
Cláudio Nahum Alves ◽  
Jerônimo Lameira
Keyword(s):  
Resistance Mechanism ◽  
Fosfomycin Resistance

scholarly journals Characterization of the fomA andfomB Gene Products from Streptomyces wedmorensis, Which Confer Fosfomycin Resistance on Escherichia coli

2000 ◽  
Vol 44 (3) ◽  
pp. 647-650 ◽  
Author(s):  
Seiji Kobayashi ◽  
Tomohisa Kuzuyama ◽  
Haruo Seto
Keyword(s):  
Escherichia Coli ◽  
Resistance Mechanism ◽  
Biosynthetic Gene Cluster ◽  
Magnesium Ion ◽  
Gene Products ◽  
Biosynthetic Gene ◽  
E Coli ◽  
Fosfomycin Resistance ◽  
High Level

ABSTRACT Together, the fomA and fomB genes in the fosfomycin biosynthetic gene cluster of Streptomyces wedmorensis confer high-level fosfomycin resistance onEscherichia coli. To elucidate their functions, thefomA and fomB genes were overexpressed inE. coli and the gene products were characterized. The recombinant FomA protein converted fosfomycin to fosfomycin monophosphate, which was inactive on E. coli, in the presence of a magnesium ion and ATP. On the other hand, the recombinant FomB protein did not inactivate fosfomycin. However, a reaction mixture containing FomA and FomB proteins converted fosfomycin to fosfomycin monophosphate and fosfomycin diphosphate in the presence of ATP and a magnesium ion, indicating that FomA and FomB catalyzed phosphorylations of fosfomycin and fosfomycin monophosphate, respectively. These results suggest that the self-resistance mechanism of the fosfomycin-producing organism S. wedmorensis is mono- and diphosphorylation of the phosphonate function of fosfomycin catalyzed by FomA and FomB.

Pull-out Resistance Mechanism of Wari-kusabi Joints

2013 ◽  
Vol 59 (2) ◽  
pp. 81-89
Author(s):  
Tomoaki Soma ◽  
Masafumi Inoue ◽  
Masahiro Inayama ◽  
Hiroya Obayashi ◽  
Naoto Ando
Keyword(s):  
Resistance Mechanism ◽  
Pull Out

Symptoms Development as Tools to Differentiate Dorizontal Resistance in Sunflower

Agrotek ◽  
2018 ◽  
Vol 2 (6) ◽  
Author(s):  
Cipta Meliala ◽  
Felicity Fear ◽  
Denis Tourvieille de Labrouhe
Keyword(s):  
Downy Mildew ◽  
Natural Infection ◽  
Resistance Mechanism ◽  
Good Method ◽  
Vegetative Stage ◽  
Horizontal Resistance ◽  
Symptom Development ◽  
Plasmopara Halstedii ◽  
Controlled Conditions ◽  
Symptom Progression

Downy mildew symptoms caused by Plasmopara halstedii encountered in sunflower plantation are varied. This variation may be related to the resistance mechanism presented by plant to the invasion of the fungus. Our objectives were firstly is to evaluate symptom development after fungus race 710 inoculation on some vegetative stage of susceptible hybrid. Second objective is to evaluate the reaction some sunflower genotypes after fungus inoculation. The study was conducted under controlled conditions or under netting cages in the field. The development of downy mildew symptoms were affected by all factors studied. Shoot inoculation may present a good method to produce downy mildew symptom similar to the natural infection. Downy mildew symptom progression may be used to screen a genotype with a horizontal resistance.

A Latent Issue of Via Resistance: Mechanism and Solution

2018 ◽  
Author(s):  
Wentao Qin ◽  
Scott Donaldson ◽  
Dan Rogers ◽  
Lahcen Boukhanfra ◽  
Julien Thiefain ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Chemical Mechanical Planarization ◽  
Resistance Mechanism ◽  
Formation Enthalpy ◽  
Metal Line ◽  
Device Failure ◽  
Valence Electrons ◽  
Wafer Processing ◽  
Field Failure ◽  
And Tungsten

Abstract Many semiconductor products are manufactured with mature technologies involving the uses of aluminum (Al) lines and tungsten (W) vias. High resistances of the vias were sometimes observed only after electrical or thermal stress. A layer of Ti oxide was found on such a via. In the wafer processing, the post W chemical mechanical planarization (WCMP) cleaning left residual W oxide on the W plugs. Ti from the overlaying metal line spontaneously reduced the W oxide, through which Ti oxide formed. Compared with W oxide, the Ti oxide has a larger formation enthalpy, and the valence electrons of Ti are more tightly bound to the O ion cores. As a result, the Ti oxide is more resistive than the W oxide. Consequently, the die functioned well in the first test in the fab, but the via resistance increased significantly after a thermal stress, which led to device failure in the second test. The NH4OH concentration was therefore increased to more effectively remove residual W oxide, which solved the problem. The thermal stress had prevented the latent issue from becoming a more costly field failure.

Characterization of Soft-rot-resistant Amorphophallus konjac and Preliminary Analysis of the Resistance Mechanism

2013 ◽  
Vol 48 (3) ◽  
pp. 295-302
Author(s):  
Lei Zhenzhen ◽  
Ye Jinglong ◽  
Cheng Haili ◽  
Chen Yun ◽  
Wang Huixing ◽  
...  
Keyword(s):  
Preliminary Analysis ◽  
Resistance Mechanism ◽  
Soft Rot ◽  
Amorphophallus Konjac
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