scholarly journals Interfacial Oxidized Gate Insulators for Low-Power Oxide Thin-Film Transistors

ACS Omega ◽  
2021 ◽  
Vol 6 (4) ◽  
pp. 2717-2726
Author(s):  
In Hye Kang ◽  
Sang Ho Hwang ◽  
Young Jo Baek ◽  
Seo Gwon Kim ◽  
Ye Lin Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Power ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Gate Insulators

New Low-power Gate Driver Circuit Integrated by Metal Oxide Thin Film Transistors

2020 ◽  
Vol 41 (1) ◽  
pp. 103-109
Author(s):  
林奕圳 LIN Yi-zhen ◽  
胡宇峰 HU Yu-feng ◽  
周 雷 ZHOU Lei ◽  
吴为敬 WU Wei-jing ◽  
邹建华 ZOU Jian-hua ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Low Power ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Driver Circuit ◽  
Metal Oxide Thin Film ◽  
Gate Driver

scholarly journals A Low-Power Memory-in-Pixel Circuit for Liquid Crystal Displays Comprising Low-Temperature Poly-Silicon and Oxide Thin-Film Transistors

Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1958
Author(s):  
Jongbin Kim ◽  
Woo-Rim Lee ◽  
Hoon-Ju Chung ◽  
Seung-Woo Lee
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Low Temperature ◽  
Power Consumption ◽  
Low Power ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Liquid Crystal Displays ◽  
Oxide Thin Film ◽  
Measurement Results

In this paper, a new pixel structure using low-temperature polycrystalline silicon and oxide (LTPO) thin-film transistors (TFTs) for low-power liquid crystal displays (LCDs) is proposed. The extremely low off-state current of oxide semiconductor TFTs enables the proposed circuit to operate at a very low frame frequency of 1/60 Hz, so that the power consumption can be significantly reduced. In addition, the low-temperature polycrystalline silicon TFTs with high reliability directly drive pixels, which can achieve stable and flicker-free LCDs. The proposed circuit is fabricated using the LTPO TFT backplane and successfully verified by simulation and measurement results. The measurement results prove that the proposed circuit operates well without further programming for 60 s, and the power consumption in the panel (except backlight power) can be reduced to 0.02% of that of conventional LCD.

Effect of Gd3+ Doping on Sol–Gel Prepared Y2O3 Films as Gate Insulators for Oxide Thin Film Transistors

2021 ◽  
Vol 21 (9) ◽  
pp. 4694-4699
Author(s):  
Byung-Yoon Park ◽  
Sungho Choi ◽  
Taek Ahn
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Operating Voltage ◽  
Robust Solution ◽  
Gate Insulators ◽  
Low Leakage ◽  
Low Leakage Current

The relationships between the microstructure and the dielectric properties of sol–gel prepared Y2O3 films with various Gd3+ doping were systematically investigated. Robust solution processed lanthanide films, (Y1−xGdx)2O3 (0 < x ≤ 0.5), are demonstrated as high-k gate insulators for low voltage-driven oxide thin film transistors and their optimized composition is presented. With the proper amount of Gd3+ doping, the corresponding thin film insulators exhibit low leakage current with increased dielectric constant. The resultant Zn–Sn–O/(Y, Gd)2O3 TFT exhibits enhanced performance, by a factor of 10.7 compared with TFTs using a SiO2 insulator, with a field-effect mobility of ~3.15 cm2V−1s−1 and an exceptionally low operating voltage <15 V.

A low-power D flip flop integrated by metal oxide thin film transistors employing internal feedback control

2018 ◽  
Vol 33 (11) ◽  
pp. 115004 ◽  
Author(s):  
Fan Zhan ◽  
Jian-Dong Wu ◽  
Lei Zhou ◽  
Jian-Hua Zou ◽  
Hong Tao ◽  
...  
Keyword(s):  
Thin Film ◽  
Feedback Control ◽  
Metal Oxide ◽  
Low Power ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Flip Flop ◽  
Internal Feedback ◽  
Metal Oxide Thin Film
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