n-Ga-Zn-oxide Thin-film Transistors with Sb2TeOx Gate Insulators Fabricated by Reactive Sputtering Using a Metallic Sb2Te Target

2011 ◽  
Vol 58 (3(1)) ◽  
pp. 608-611 ◽  
Author(s):  
Woo-Seok Cheong
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Reactive Sputtering ◽  
Oxide Thin Film ◽  
Gate Insulators

Effect of Gd3+ Doping on Sol–Gel Prepared Y2O3 Films as Gate Insulators for Oxide Thin Film Transistors

2021 ◽  
Vol 21 (9) ◽  
pp. 4694-4699
Author(s):  
Byung-Yoon Park ◽  
Sungho Choi ◽  
Taek Ahn
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Operating Voltage ◽  
Robust Solution ◽  
Gate Insulators ◽  
Low Leakage ◽  
Low Leakage Current

The relationships between the microstructure and the dielectric properties of sol–gel prepared Y2O3 films with various Gd3+ doping were systematically investigated. Robust solution processed lanthanide films, (Y1−xGdx)2O3 (0 < x ≤ 0.5), are demonstrated as high-k gate insulators for low voltage-driven oxide thin film transistors and their optimized composition is presented. With the proper amount of Gd3+ doping, the corresponding thin film insulators exhibit low leakage current with increased dielectric constant. The resultant Zn–Sn–O/(Y, Gd)2O3 TFT exhibits enhanced performance, by a factor of 10.7 compared with TFTs using a SiO2 insulator, with a field-effect mobility of ~3.15 cm2V−1s−1 and an exceptionally low operating voltage <15 V.

P-15: Self-Aligned Top-Gate Zinc Oxide Thin Film Transistors Fabricated by Reactive Sputtering of Metallic Zinc Target

2015 ◽  
Vol 46 (1) ◽  
pp. 1173-1175
Author(s):  
Meng Zhang ◽  
Zhihe Xia ◽  
Wei Zhou ◽  
Rongsheng Chen ◽  
Man Wong ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Reactive Sputtering ◽  
Oxide Thin Film ◽  
Metallic Zinc ◽  
Zinc Oxide Thin Film

scholarly journals Zinc tin oxide thin film transistors produced by a high rate reactive sputtering: Effect of tin composition and annealing temperatures

2017 ◽  
Vol 214 (2) ◽  
pp. 1600470 ◽  
Author(s):  
Kham M. Niang ◽  
Junhee Cho ◽  
Aditya Sadhanala ◽  
William I. Milne ◽  
Richard H. Friend ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Reactive Sputtering ◽  
High Rate ◽  
Oxide Thin Film ◽  
Annealing Temperatures ◽  
Zinc Tin Oxide

Role of high-k gate insulators for oxide thin film transistors

2010 ◽  
Vol 518 (11) ◽  
pp. 3030-3032 ◽  
Author(s):  
Sang Yeol Lee ◽  
Seongpil Chang ◽  
Jae-Sang Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Gate Insulators ◽  
High K
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