scholarly journals In Situ Study of Molecular Doping of Chlorine on MoS2 Field Effect Transistor Device in Ultrahigh Vacuum Conditions

ACS Omega ◽  
2020 ◽  
Vol 5 (43) ◽  
pp. 28108-28115
Author(s):  
Nguyen Tat Trung ◽  
Mohammad Ikram Hossain ◽  
Md Iftekharul Alam ◽  
Atsushi Ando ◽  
Osamu Kitakami ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ultrahigh Vacuum ◽  
In Situ Study ◽  
Molecular Doping ◽  
Effect Transistor

In situ study of sensor behavior of MoS2 field effect transistor for methyl orange molecule in ultra high vacuum condition

2020 ◽  
Vol 32 (7) ◽  
pp. 075501
Author(s):  
Muhammad Shamim Al Mamun ◽  
Hiroki Waizumi ◽  
Tsuyoshi Takaoka ◽  
Md Iftekharul Alam ◽  
Yudai Tanaka ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
In Situ Study ◽  
High Vacuum Condition ◽  
Effect Transistor ◽  
Ultra High Vacuum Condition ◽  
Methyl Orange Molecule

scholarly journals Electrically tunable low-density superconductivity in a monolayer topological insulator

Science ◽  
2018 ◽  
Vol 362 (6417) ◽  
pp. 926-929 ◽  
Author(s):  
Valla Fatemi ◽  
Sanfeng Wu ◽  
Yuan Cao ◽  
Landry Bretheau ◽  
Quinn D. Gibson ◽  
...  
Keyword(s):  
Ground State ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Quantum Spin ◽  
Topological Phases ◽  
Critical Temperatures ◽  
Topological States ◽  
Effect Transistor ◽  
Topological Phases Of Matter

Turning on superconductivity in a topologically nontrivial insulator may provide a route to search for non-Abelian topological states. However, existing demonstrations of superconductor-insulator switches have involved only topologically trivial systems. Here we report reversible, in situ electrostatic on-off switching of superconductivity in the recently established quantum spin Hall insulator monolayer tungsten ditelluride (WTe2). Fabricated into a van der Waals field-effect transistor, the monolayer’s ground state can be continuously gate-tuned from the topological insulating to the superconducting state, with critical temperaturesTcup to ~1 kelvin. Our results establish monolayer WTe2as a material platform for engineering nanodevices that combine superconducting and topological phases of matter.

Germanium Multiple-Gate Field-Effect Transistor With In Situ Boron-Doped Raised Source/Drain

2013 ◽  
Vol 60 (7) ◽  
pp. 2135-2141 ◽  
Author(s):  
Bin Liu ◽  
Chunlei Zhan ◽  
Yue Yang ◽  
Ran Cheng ◽  
Pengfei Guo ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Boron Doped ◽  
Effect Transistor

Ultrasensitive in Situ Label-Free DNA Detection Using a GaN Nanowire-Based Extended-Gate Field-Effect-Transistor Sensor

2011 ◽  
Vol 83 (6) ◽  
pp. 1938-1943 ◽  
Author(s):  
Chin-Pei Chen ◽  
Abhijit Ganguly ◽  
Ching-Ying Lu ◽  
Ting-Yu Chen ◽  
Chun-Chiang Kuo ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Dna Detection ◽  
Label Free ◽  
Free Dna ◽  
Gan Nanowire ◽  
Effect Transistor

IGZO-based electrolyte-gated field-effect transistor for in situ biological sensing platform

2018 ◽  
Vol 262 ◽  
pp. 876-883 ◽  
Author(s):  
Myung-Sic Chae ◽  
Ju Hyun Park ◽  
Hyun Woo Son ◽  
Kyo Seon Hwang ◽  
Tae Geun Kim
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Biological Sensing ◽  
Sensing Platform ◽  
Effect Transistor
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