scholarly journals Recent Advances in the Carrier Mobility of Two-Dimensional Materials: A Theoretical Perspective

ACS Omega ◽  
2020 ◽  
Vol 5 (24) ◽  
pp. 14203-14211 ◽  
Author(s):  
Showkat Hassan Mir ◽  
Vivek Kumar Yadav ◽  
Jayant Kumar Singh
Keyword(s):  
Carrier Mobility ◽  
Theoretical Perspective ◽  
Two Dimensional ◽  
Recent Advances ◽  
Two Dimensional Materials

scholarly journals Recent advances in mode-locked fiber lasers based on two-dimensional materials

Nanophotonics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 2315-2340 ◽  
Author(s):  
Junli Wang ◽  
Xiaoli Wang ◽  
Jingjing Lei ◽  
Mengyuan Ma ◽  
Cong Wang ◽  
...  
Keyword(s):  
Fiber Lasers ◽  
2D Materials ◽  
Synthesis Methods ◽  
Two Dimensional ◽  
New Materials ◽  
Saturable Absorbers ◽  
Operating Wavelength ◽  
Recent Advances ◽  
Two Dimensional Materials ◽  
Diverse Mode

AbstractDue to the unique properties of two-dimensional (2D) materials, much attention has been paid to the exploration and application of 2D materials. In this review, we focus on the application of 2D materials in mode-locked fiber lasers. We summarize the synthesis methods for 2D materials, fiber integration with 2D materials and 2D materials based saturable absorbers. We discuss the performance of the diverse mode-locked fiber lasers in the typical operating wavelength such as 1, 1.5, 2 and 3 μm. Finally, a summary and outlook of the further applications of the new materials in mode-locked fiber lasers are presented.

Preparation of single-crystal metal substrates for the growth of high-quality two-dimensional materials

2021 ◽  
Vol 8 (1) ◽  
pp. 182-200
Author(s):  
Yanglizhi Li ◽  
Luzhao Sun ◽  
Haiyang Liu ◽  
Yuechen Wang ◽  
Zhongfan Liu
Keyword(s):  
Single Crystal ◽  
2D Materials ◽  
Controlled Growth ◽  
Two Dimensional ◽  
High Quality ◽  
Metal Substrates ◽  
Recent Advances ◽  
Two Dimensional Materials

Recent advances on preparing single-crystal metals and their crucial roles in controlled growth of high-quality 2D materials are reviewed.

scholarly journals A Horizontal-Gate Monolayer MoS2 Transistor Based on Image Force Barrier Reduction

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1245 ◽  
Author(s):  
Kun Yang ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Wei Li ◽  
Tao Han
Keyword(s):  
Carrier Mobility ◽  
Transition Metal Dichalcogenides ◽  
Image Force ◽  
Drain Current ◽  
Equivalent Model ◽  
Two Dimensional ◽  
Monolayer Mos2 ◽  
Two Dimensional Materials ◽  
Metal Dichalcogenides ◽  
New Generation

Transition metal dichalcogenides (TMDCs) have received wide attention as a new generation of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility, contact characteristics between metal and two-dimensional materials, and complicated fabrication processes. In order to overcome these problems, a large amount of research has been carried out so that the performance of the device has been greatly improved. However, most of these studies are based on complicated fabrication processes which are not conducive to the improvement of integration. In view of this problem, a horizontal-gate monolayer MoS2 transistor based on image force barrier reduction is proposed, in which the gate is in the same plane as the source and drain and comparable to back-gated transistors on-off ratios up to 1 × 104 have been obtained. Subsequently, by combining the Y-Function method (YFM) and the proposed diode equivalent model, it is verified that Schottky barrier height reduction is the main reason giving rise to the observed source-drain current variations. The proposed structure of the device not only provides a new idea for the high integration of two-dimensional devices, but also provides some help for the study of contact characteristics between two-dimensional materials and metals.

scholarly journals Two‐dimensional Materials for Integrated Photonics: Recent Advances and Future Challenges

Small Science ◽  
2020 ◽  
pp. 2000053
Author(s):  
Jianghong Wu ◽  
Hui Ma ◽  
Peng Yin ◽  
Yanqi Ge ◽  
Yupeng Zhang ◽  
...  
Keyword(s):  
Integrated Photonics ◽  
Two Dimensional ◽  
Recent Advances ◽  
Two Dimensional Materials ◽  
Future Challenges

scholarly journals Recent progress on exploring exceptionally high and anisotropic H+/OH− ion conduction in two-dimensional materials

2018 ◽  
Vol 9 (1) ◽  
pp. 33-43 ◽  
Author(s):  
Pengzhan Sun ◽  
Renzhi Ma ◽  
Takayoshi Sasaki
Keyword(s):  
Recent Progress ◽  
2D Materials ◽  
Two Dimensional ◽  
Ion Conduction ◽  
Recent Advances ◽  
Ion Conductivities ◽  
Two Dimensional Materials

An overview of recent advances in measuring and understanding the exceptionally high and anisotropic H+/OH− ion conductivities of representative 2D materials.

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