scholarly journals Highly Strained III–V–V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement

ACS Nano ◽  
2019 ◽  
Vol 13 (5) ◽  
pp. 5931-5938 ◽  
Author(s):  
Yunyan Zhang ◽  
George Davis ◽  
H. Aruni Fonseka ◽  
Anton Velichko ◽  
Anders Gustafsson ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Confinement ◽  
Highly Strained

Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes

2002 ◽  
Vol 81 (13) ◽  
pp. 2334-2336 ◽  
Author(s):  
S. Mogg ◽  
N. Chitica ◽  
R. Schatz ◽  
M. Hammar
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
Highly Strained

Strain‐induced lateral carrier confinement in quantum wells grafted onto nonplanar substrates

1992 ◽  
Vol 61 (11) ◽  
pp. 1319-1321 ◽  
Author(s):  
Winston K. Chan ◽  
T. S. Ravi ◽  
K. Kash ◽  
Jürgen Christen ◽  
Thomas J. Gmitter ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Carrier Confinement

scholarly journals Optical absorption in highly strained Ge/SiGe quantum wells: The role of Γ→Δ scattering

2012 ◽  
Vol 112 (12) ◽  
pp. 123105 ◽  
Author(s):  
L. Lever ◽  
Z. Ikonić ◽  
A. Valavanis ◽  
R. W. Kelsall ◽  
M. Myronov ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Quantum Wells ◽  
Highly Strained ◽  
Sige Quantum Wells

Growth of highly strained GaInAs/GaAs quantum wells for 1.2μm wavelength lasers

2000 ◽  
Vol 209 (1) ◽  
pp. 27-36 ◽  
Author(s):  
D Schlenker ◽  
T Miyamoto ◽  
Z Chen ◽  
F Koyama ◽  
K Iga
Keyword(s):  
Quantum Wells ◽  
Highly Strained

Photoluminescence of heterostructures with highly strained GaAs quantum wells in Al0.48In0.52As and Ga0.47In0.53As layers

2006 ◽  
Vol 32 (4) ◽  
pp. 299-301
Author(s):  
D. A. Vinokurov ◽  
S. A. Zorina ◽  
V. A. Kapitonov ◽  
D. N. Nikolaev ◽  
A. L. Stankevich ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Highly Strained

Electrical Characterization of Highly Strained Ultrathin InAs/GaAs Quantum Wells

1993 ◽  
Vol 326 ◽  
Author(s):  
F. Yu ◽  
R. Droopad ◽  
G.N. Maracas ◽  
J. Liu ◽  
R. Rajesh ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electrical Characterization ◽  
Highly Strained

Lateral band‐gap patterning and carrier confinement in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on nonplanar dot patterns

1992 ◽  
Vol 61 (7) ◽  
pp. 813-815 ◽  
Author(s):  
M. Krahl ◽  
E. Kapon ◽  
L. M. Schiavone ◽  
B. P. Van der Gaag ◽  
J. P. Harbison ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Band Gap ◽  
Molecular Beam ◽  
Lateral Band ◽  
Carrier Confinement
Sign in / Sign up

Export Citation Format

Share Document