van der Waals Epitaxy of High-Mobility Polymorphic Structure of Mo6Te6 Nanoplates/MoTe2 Atomic Layers with Low Schottky Barrier Height

ACS Nano ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 642-648 ◽  
Author(s):  
Rochelle S. Lee ◽  
Donghwan Kim ◽  
Sachin A. Pawar ◽  
TaeWan Kim ◽  
Jae Cheol Shin ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Van Der Waals ◽  
High Mobility ◽  
Polymorphic Structure

Tuning the Schottky barrier height in a multiferroic In2Se3/Fe3GeTe2 van der Waals heterojunction

Nanoscale ◽  
2021 ◽  
Author(s):  
Maria Javaid ◽  
Patrick David Taylor ◽  
Sherif Abdulkader Tawfik ◽  
Michelle Jeanette Sapountzis Spencer
Keyword(s):  
Density Functional Theory ◽  
Electronic Properties ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Density Functional ◽  
Schottky Barrier Height ◽  
Van Der Waals ◽  
Ferroelectric Material ◽  
Functional Theory ◽  
Significant Interest

The ferroelectric material In2Se3 is currently of significant interest due to its built-in polarisation characteristics that can significantly modulate its electronic properties. Here we employ density functional theory to determine...

Lowering the Schottky Barrier Height by Graphene/Ag Electrodes for High-Mobility MoS2 Field-Effect Transistors

2018 ◽  
Vol 31 (2) ◽  
pp. 1804422 ◽  
Author(s):  
Sang-Soo Chee ◽  
Dongpyo Seo ◽  
Hanggyu Kim ◽  
Hanbyeol Jang ◽  
Seungmin Lee ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Field Effect ◽  
Schottky Barrier Height ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Ag Electrodes

scholarly journals Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors

2019 ◽  
Vol 3 (1) ◽  
Author(s):  
Yi-Hsun Chen ◽  
Chih-Yi Cheng ◽  
Shao-Yu Chen ◽  
Jan Sebastian Dominic Rodriguez ◽  
Han-Ting Liao ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Surface Oxidation ◽  
Tunneling Barrier ◽  
Experimental Realization ◽  
Gap States

AbstractIn two-dimensional (2D)-semiconductor-based field-effect transistors and optoelectronic devices, metal–semiconductor junctions are one of the crucial factors determining device performance. The Fermi-level (FL) pinning effect, which commonly caused by interfacial gap states, severely limits the tunability of junction characteristics, including barrier height and contact resistance. A tunneling contact scheme has been suggested to address the FL pinning issue in metal–2D-semiconductor junctions, whereas the experimental realization is still elusive. Here, we show that an oxidized-monolayer-enabled tunneling barrier can realize a pronounced FL depinning in indium selenide (InSe) transistors, exhibiting a large pinning factor of 0.5 and a highly modulated Schottky barrier height. The FL depinning can be attributed to the suppression of metal- and disorder-induced gap states as a result of the high-quality tunneling contacts. Structural characterizations indicate uniform and atomically thin-surface oxidation layer inherent from nature of van der Waals materials and atomically sharp oxide–2D-semiconductor interfaces. Moreover, by effectively lowering the Schottky barrier height, we achieve an electron mobility of 2160 cm2/Vs and a contact barrier of 65 meV in two-terminal InSe transistors. The realization of strong FL depinning in high-mobility InSe transistors with the oxidized-monolayer presents a viable strategy to exploit layered semiconductors in contact engineering for advanced electronics and optoelectronics.

High mobility ReSe2 field effect transistors: Schottky-barrier-height-dependent photoresponsivity and broadband light detection with Co decoration

2D Materials ◽  
2019 ◽  
Vol 7 (1) ◽  
pp. 015010 ◽  
Author(s):  
Muhammad Farooq Khan ◽  
Shania Rehman ◽  
Imtisal Akhtar ◽  
Sikandar Aftab ◽  
Hafiz Muhammad Salman Ajmal ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Field Effect ◽  
Schottky Barrier Height ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Light Detection

Dipole controlled Schottky barrier in the blue-phosphorene-phase of GeSe based van der Waals heterostructures

2019 ◽  
Vol 4 (2) ◽  
pp. 480-489 ◽  
Author(s):  
Lei Peng ◽  
Yu Cui ◽  
Liping Sun ◽  
Jinyan Du ◽  
Sufan Wang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Blue Phosphorene

Intrinsic dipole of blue-phosphorene-phase GeSe can be used to modulate the Schottky barrier height of graphene/GeSe van der Wall heterostructures by stacking in different patterns.

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