Oxygen-Promoted Chemical Vapor Deposition of Graphene on Copper: A Combined Modeling and Experimental Study

ACS Nano ◽  
2018 ◽  
Vol 12 (9) ◽  
pp. 9372-9380 ◽  
Author(s):  
Bharathi Madurai Srinivasan ◽  
Yufeng Hao ◽  
Ramanarayan Hariharaputran ◽  
Shanti Rywkin ◽  
James C. Hone ◽  
...  
2018 ◽  
Vol 335 ◽  
pp. 172-177 ◽  
Author(s):  
Yingchao Meng ◽  
Huaqiang Yin ◽  
Malin Liu ◽  
Tao Ma ◽  
Shengyao Jiang

2017 ◽  
Vol 897 ◽  
pp. 79-82
Author(s):  
Marcin Zielinski ◽  
Thierry Chassagne ◽  
Roxana Arvinte ◽  
Adrien Michon ◽  
Marc Portail ◽  
...  

After presenting an exhaustive experimental study of aluminum incorporation in epitaxial 4H-SiC and 3CSiC films grown by chemical vapor deposition (CVD), we focalize once more on what is called site competition effects. We observed that the influence of C/Si ratio on dopant (Al, N) incorporation in SiC was qualitatively different depending on whether the growth experiments were performed in “low temperature” (LT) or “high temperature” (HT) regime. Partial explanation of observed phenomena basing on thermal evolution of carbon coverage of SiC surface is proposed.


2013 ◽  
Vol 230 ◽  
pp. 137-144 ◽  
Author(s):  
P. Drieux ◽  
G. Chollon ◽  
S. Jacques ◽  
A. Allemand ◽  
D. Cavagnat ◽  
...  

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