Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical Heterostructures via van der Waals Epitaxy

ACS Nano ◽  
2016 ◽  
Vol 10 (7) ◽  
pp. 7039-7046 ◽  
Author(s):  
Leith Samad ◽  
Sage M. Bladow ◽  
Qi Ding ◽  
Junqiao Zhuo ◽  
Robert M. Jacobberger ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Van Der Waals ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

ACS Nano ◽  
2017 ◽  
Vol 11 (4) ◽  
pp. 4328-4336 ◽  
Author(s):  
Zhepeng Zhang ◽  
Xujing Ji ◽  
Jianping Shi ◽  
Xiebo Zhou ◽  
Shuai Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Van Der Waals ◽  
Chemical Vapor ◽  
Van Der Waals Heterostructures ◽  
Chemical Vapor Deposition Growth

Chemical vapor deposition growth and characterization of AlGaN nanowires

2015 ◽  
Vol 32 (6) ◽  
pp. 638
Author(s):  
Xingmin Cai ◽  
Xiaoqiang Su ◽  
Fan Ye ◽  
Huan Wang ◽  
Guangxing Liang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth

Epitaxial mist chemical vapor deposition growth and characterization of Cu3N films on (0001)α-Al2O3 substrates

2020 ◽  
Vol 13 (7) ◽  
pp. 075505
Author(s):  
Tomohiro Yamaguchi ◽  
Hiroki Nagai ◽  
Takanori Kiguchi ◽  
Nao Wakabayashi ◽  
Takuto Igawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Α Al2o3

scholarly journals Microscopic evidence of strong interactions between chemical vapor deposited 2D MoS2 film and SiO2 growth template

2021 ◽  
Vol 8 (1) ◽  
Author(s):  
Woonbae Sohn ◽  
Ki Chang Kwon ◽  
Jun Min Suh ◽  
Tae Hyung Lee ◽  
Kwang Chul Roh ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Spherical Aberration ◽  
Van Der Waals ◽  
Chemical Vapor ◽  
Interface Layer ◽  
Van Der Waals Interactions ◽  
Strong Interactions ◽  
Transition Electron Microscopy ◽  
Oxide Substrates

AbstractTwo-dimensional MoS2 film can grow on oxide substrates including Al2O3 and SiO2. However, it cannot grow usually on non-oxide substrates such as a bare Si wafer using chemical vapor deposition. To address this issue, we prepared as-synthesized and transferred MoS2 (AS-MoS2 and TR-MoS2) films on SiO2/Si substrates and studied the effect of the SiO2 layer on the atomic and electronic structure of the MoS2 films using spherical aberration-corrected scanning transition electron microscopy (STEM) and electron energy loss spectroscopy (EELS). The interlayer distance between MoS2 layers film showed a change at the AS-MoS2/SiO2 interface, which is attributed to the formation of S–O chemical bonding at the interface, whereas the TR-MoS2/SiO2 interface showed only van der Waals interactions. Through STEM and EELS studies, we confirmed that there exists a bonding state in addition to the van der Waals force, which is the dominant interaction between MoS2 and SiO2. The formation of S–O bonding at the AS-MoS2/SiO2 interface layer suggests that the sulfur atoms at the termination layer in the MoS2 films are bonded to the oxygen atoms of the SiO2 layer during chemical vapor deposition. Our results indicate that the S–O bonding feature promotes the growth of MoS2 thin films on oxide growth templates.

Pre-Cracking and Plasma Enhanced Metalorganic Chemical Vapor Deposition Processes for Epitaxial Hg1−xCdxTe and HgTe-CdTe Superlattice Growth

1987 ◽  
Vol 102 ◽  
Author(s):  
P.-Y. Lu ◽  
L. M. Williams ◽  
C.-H. Wang ◽  
S. N. G. Chu ◽  
M. H. Ross
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Infrared Transmission ◽  
Chemical Vapor Deposition Growth ◽  
Deposition Processes ◽  
Cdznte Substrates ◽  
First Time ◽  
Metalorganic Chemical

ABSTRACTTwo low temperature metalorganic chemical vapor deposition growth techniques, the pre-cracking method and the plasma enhanced method, will be discussed. The pre-cracking technique enables one to grow high quality epitaxial Hg1−xCdxTe on CdTe or CdZnTe substrates at temperatures around 200–250°C. HgTe-CdTe superlattices with sharp interfaces have also been fabricated. Furthermore, for the first time, we have demonstrated that ternary Hg1−xCdTe compounds and HgTe-CdTe superlattices can be successfully grown by the plasma enhanced process at temperatures as low as 135 to 150°C. Material properties such as surface morphology, infrared transmission, Hall mobility, and interface sharpness will be presented.

Vertically aligned growth of small-diameter single-walled carbon nanotubes on flexible stainless steels by alcohol catalytic chemical vapor deposition with Ir catalyst on alumina buffer layer

2021 ◽  
Author(s):  
Shu KONDO ◽  
Daiki YAMAMOTO ◽  
Kamal Prasad Prasad Sharma ◽  
Yazid Yaakob ◽  
Takahiro SAIDA ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Small Diameter ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Chemical Vapor Deposition Growth ◽  
Catalytic Chemical Vapor Deposition ◽  
Single Walled Carbon ◽  
Vertically Aligned

Abstract We performed single-walled carbon nanotube (SWCNT) growth on flexible stainless-steel foils by applying alcohol catalytic chemical vapor deposition using an Ir catalyst with an alumina buffer layer. When the alumina thickness was 90 nm, vertically aligned SWCNTs with a thickness of 4.6 m were grown. In addition, Raman results showed that the diameters of most SWCNTs were distributed below 1.1 nm. Compared with conventional chemical vapor deposition growth where Si wafers are used as substrates, this method is more cost effective and easier to extend for mass production of small-diameter SWCNTs.

Sign in / Sign up

Export Citation Format

Share Document