Radio Frequency Transistors Using Aligned Semiconducting Carbon Nanotubes with Current-Gain Cutoff Frequency and Maximum Oscillation Frequency Simultaneously Greater than 70 GHz

ACS Nano ◽  
2016 ◽  
Vol 10 (7) ◽  
pp. 6782-6790 ◽  
Author(s):  
Yu Cao ◽  
Gerald J. Brady ◽  
Hui Gui ◽  
Chris Rutherglen ◽  
Michael S. Arnold ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Radio Frequency ◽  
Oscillation Frequency ◽  
Cutoff Frequency ◽  
Current Gain ◽  
Maximum Oscillation Frequency

Carbon Nanotube Film-Based Radio Frequency Transistors with Maximum Oscillation Frequency above 100 GHz

2019 ◽  
Vol 11 (45) ◽  
pp. 42496-42503 ◽  
Author(s):  
Donglai Zhong ◽  
Huiwen Shi ◽  
Li Ding ◽  
Chenyi Zhao ◽  
Jingxia Liu ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Radio Frequency ◽  
Oscillation Frequency ◽  
Maximum Oscillation Frequency ◽  
Carbon Nanotube Film

200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors

2016 ◽  
Vol 8 (39) ◽  
pp. 25645-25649 ◽  
Author(s):  
Yun Wu ◽  
Xuming Zou ◽  
Menglong Sun ◽  
Zhengyi Cao ◽  
Xinran Wang ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Oscillation Frequency ◽  
Maximum Oscillation Frequency ◽  
Cvd Graphene

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

scholarly journals A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 488
Author(s):  
Hujun Jia ◽  
Mengyu Dong ◽  
Xiaowei Wang ◽  
Shunwei Zhu ◽  
Yintang Yang
Keyword(s):  
Breakdown Voltage ◽  
Direct Current ◽  
Oscillation Frequency ◽  
The Novel ◽  
Saturation Current ◽  
Excellent Performance ◽  
Maximum Oscillation Frequency ◽  
Power Added Efficiency ◽  
Novel Structure ◽  
Heavily Doped

A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (Idsat) and transconductance (gm) by adding a heavily doped region, reduces the gate-source capacitance (Cgs) by adding a lightly doped region and improves the breakdown voltage (Vb) by embedding an insulated region (Si3N4). Compared to the double-recessed (DR) structure, the saturation current, the transconductance, the breakdown voltage, the maximum oscillation frequency (fmax), the maximum power added efficiency and the maximum theoretical output power density (Pmax) of the novel structure is increased by 24%, 21%, 9%, 11%, 14% and 34%, respectively. Therefore, the novel structure has excellent performance and has a broader application prospect than the double recessed structure.

VERTICAL SCALING OF TYPE I InP HBT WITH FT > 500 GHZ

2004 ◽  
Vol 14 (03) ◽  
pp. 625-631 ◽  
Author(s):  
J. W. LAI ◽  
W. HAFEZ ◽  
M. FENG
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Impact Ionization ◽  
Cutoff Frequency ◽  
Current Gain ◽  
Vertical Scaling ◽  
Physical Parameters ◽  
Type I ◽  
Peak Current Density ◽  
Rf Performance

We have fabricated the high-speed InP/InGaAs -based single heterojunction bipolar transistors (SHBTs) with current gain cutoff frequency, fT from 166GHz to over 500GHz by the approach of vertical scaling. Collector thickness is reduced from 3000Å to 750Å and the peak current density is increased up to 1300kA/cm2. In this paper, device rf performance has been compared with respect to materials with different vertical dimensions. The scaling limitation is also studied by analytical approach. The extracted physical parameters suggest that the parasitic emitter resistance is the major limit on further enhancing ultra-scaled HBT intrinsic speed due to the associated RECBC delay. The cut-off frequency of a 500Å collector SHBT has been measured and the results indicate a dramatic drop on fT, supporting the conclusion projected by model analysis. It is also commented that for deeply downscaled HBTs, impact ionization could be another degrading mechanism limits device bandwidth.

1510 mS/mm 0.1 [micro sign]m gate length pseudomorphic HEMTs with intrinsic current gain cutoff frequency of 220 GHz

1996 ◽  
Vol 32 (9) ◽  
pp. 848 ◽  
Author(s):  
F. Diette ◽  
D. Langrez ◽  
J.L. Codron ◽  
E. Delos ◽  
D. Theron ◽  
...  
Keyword(s):  
Cutoff Frequency ◽  
Current Gain ◽  
Gate Length
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