Carbon Nanotube Film-Based Radio Frequency Transistors with Maximum Oscillation Frequency above 100 GHz

2019 ◽  
Vol 11 (45) ◽  
pp. 42496-42503 ◽  
Author(s):  
Donglai Zhong ◽  
Huiwen Shi ◽  
Li Ding ◽  
Chenyi Zhao ◽  
Jingxia Liu ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Radio Frequency ◽  
Oscillation Frequency ◽  
Maximum Oscillation Frequency ◽  
Carbon Nanotube Film

200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors

2016 ◽  
Vol 8 (39) ◽  
pp. 25645-25649 ◽  
Author(s):  
Yun Wu ◽  
Xuming Zou ◽  
Menglong Sun ◽  
Zhengyi Cao ◽  
Xinran Wang ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Oscillation Frequency ◽  
Maximum Oscillation Frequency ◽  
Cvd Graphene

Radio frequency characteristics of Fe-filled carbon nanotube film

2006 ◽  
Vol 302 (1) ◽  
pp. 232-236 ◽  
Author(s):  
Ki Hyeon Kim ◽  
Yoong-Ahm Kim ◽  
Masahiro Yamaguchi
Keyword(s):  
Carbon Nanotube ◽  
Radio Frequency ◽  
Frequency Characteristics ◽  
Carbon Nanotube Film

A carbon nanotube film as a radio frequency filter

Carbon ◽  
2005 ◽  
Vol 43 (9) ◽  
pp. 1815-1819 ◽  
Author(s):  
Nina A. Prokudina ◽  
Evgenii R. Shishchenko ◽  
Oh-Shim Joo ◽  
Kyung-Hee Hyung ◽  
Sung-Hwan Han
Keyword(s):  
Carbon Nanotube ◽  
Radio Frequency ◽  
Frequency Filter ◽  
Carbon Nanotube Film

scholarly journals A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 488
Author(s):  
Hujun Jia ◽  
Mengyu Dong ◽  
Xiaowei Wang ◽  
Shunwei Zhu ◽  
Yintang Yang
Keyword(s):  
Breakdown Voltage ◽  
Direct Current ◽  
Oscillation Frequency ◽  
The Novel ◽  
Saturation Current ◽  
Excellent Performance ◽  
Maximum Oscillation Frequency ◽  
Power Added Efficiency ◽  
Novel Structure ◽  
Heavily Doped

A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (Idsat) and transconductance (gm) by adding a heavily doped region, reduces the gate-source capacitance (Cgs) by adding a lightly doped region and improves the breakdown voltage (Vb) by embedding an insulated region (Si3N4). Compared to the double-recessed (DR) structure, the saturation current, the transconductance, the breakdown voltage, the maximum oscillation frequency (fmax), the maximum power added efficiency and the maximum theoretical output power density (Pmax) of the novel structure is increased by 24%, 21%, 9%, 11%, 14% and 34%, respectively. Therefore, the novel structure has excellent performance and has a broader application prospect than the double recessed structure.

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