Synthesis of Atomically Thin Transition Metal Disulfides for Charge Transport Layers in Optoelectronic Devices

ACS Nano ◽  
2015 ◽  
Vol 9 (4) ◽  
pp. 4146-4155 ◽  
Author(s):  
Ki Chang Kwon ◽  
Cheolmin Kim ◽  
Quyet Van Le ◽  
Seungo Gim ◽  
Jong-Myeong Jeon ◽  
...  
Author(s):  
Sai Manoj Gali ◽  
David Beljonne

Transition Metal Dichalcogenides (TMDCs) are emerging as promising two-dimensional (2D) materials. Yet, TMDCs are prone to inherent defects such as chalcogen vacancies, which are detrimental to charge transport. Passivation of...


Nano Research ◽  
2016 ◽  
Vol 9 (6) ◽  
pp. 1543-1560 ◽  
Author(s):  
He Tian ◽  
Matthew L. Chin ◽  
Sina Najmaei ◽  
Qiushi Guo ◽  
Fengnian Xia ◽  
...  

2021 ◽  
Author(s):  
Chandana C.W. Kananke-Gamage ◽  
Farshid Ramezanipour

The effect of the electronic configuration of transition metal on electrocatalytic activity, charge transport, and magnetic properties is demonstrated through investigation of Sr2LaFeMnO7 and Sr2LaCoMnO7. The two compounds are isostructural...


2020 ◽  
Vol 22 (25) ◽  
pp. 14088-14098
Author(s):  
Amine Slassi ◽  
David Cornil ◽  
Jérôme Cornil

The rise of van der Waals hetero-structures based on transition metal dichalcogenides (TMDs) opens the door to a new generation of optoelectronic devices.


2020 ◽  
Vol 1 (5) ◽  
pp. 1253-1261 ◽  
Author(s):  
Christian Mark Pelicano ◽  
Itaru Raifuku ◽  
Yasuaki Ishikawa ◽  
Yukiharu Uraoka ◽  
Hisao Yanagi

Strategic design of hierarachical core–shell heterostructure of H2O-oxidized ZnO nanorod@Mg-doped ZnO nanoparticles with enhanced charge-transport capabilities for optoelectronic devices.


RSC Advances ◽  
2019 ◽  
Vol 9 (64) ◽  
pp. 37195-37200 ◽  
Author(s):  
Lin Wang ◽  
Wenyan Wang ◽  
Quan Wang ◽  
Xiaochun Chi ◽  
Zhihui Kang ◽  
...  

It is important to determine the time-dependent evolution of the excited monolayer WS2, which will provide a basis for the reasonable design of optoelectronic devices based on two-dimensional transition metal dichalcogenides.


Nanoscale ◽  
2019 ◽  
Vol 11 (10) ◽  
pp. 4183-4189 ◽  
Author(s):  
Xue Gong ◽  
Xiaoxu Zhao ◽  
Mei Er Pam ◽  
Huizhen Yao ◽  
Zibo Li ◽  
...  

An electrical contact between metallic electrodes and semiconductors is critical for the performance of electronic and optoelectronic devices.


2020 ◽  
Vol 8 (18) ◽  
pp. 9364-9372 ◽  
Author(s):  
Jekyung Kim ◽  
Sage R. Bauers ◽  
Imran S. Khan ◽  
John Perkins ◽  
Bo-In Park ◽  
...  

Nitride materials with mixed ionic and covalent bonding character and resulting good charge transport properties are attractive for optoelectronic devices.


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