scholarly journals Seebeck Effects in N-Type and P-Type Polymers Driven Simultaneously by Surface Polarization and Entropy Differences Based on Conductor/Polymer/Conductor Thin-Film Devices

ACS Nano ◽  
2015 ◽  
Vol 9 (5) ◽  
pp. 5208-5213 ◽  
Author(s):  
Dehua Hu ◽  
Qing Liu ◽  
Jeremy Tisdale ◽  
Ting Lei ◽  
Jian Pei ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Polarization ◽  
P Type ◽  
Thin Film Devices

Light Emitting thin Film Devices Based on Self-assembled Multilayer Heterostructures of PPV

1995 ◽  
Vol 413 ◽  
Author(s):  
M. Ferreira ◽  
O. Onitsuka ◽  
A. C. Fou ◽  
B. Hsieh ◽  
M. F. Rubner
Keyword(s):  
Thin Film ◽  
Carrier Transport ◽  
Thermal Conversion ◽  
Layer By Layer ◽  
Light Emitting ◽  
Hole Transporting ◽  
Improved Performance ◽  
And Performance ◽  
P Type ◽  
Thin Film Devices

ABSTRACTPPV based light emitting thin film devices were fabricated using a layer-by-layer deposition technique involving the alternate spontaneous adsorption of a PPV precursor polymer and either poly(styrene-4-sulfonate) (SPS) or poly(methacrylic acid) (PMA). It was demonstrated that the polyanion used to self-assemble the PPV precursor strongly influences the characteristics and performance of the resulting LEDs. Devices fabricated with PPV created in the presence of SPS exhibited symmetric I–V curves, low luminance levels and very high current densities while PPV/PMA devices exhibited luminance levels in the range of 10–60 cd/m2 and classical rectifying behavior. These dramatic differences are primarily due to a low level of p-type doping activated during the thermal conversion of PPV and/or during device operation that confers excellent hole carrier transport capabilities to the PPV/SPS combination. Fabrication of a multi-slab type heterostructure device comprised of a PPV/SPS block (hole transporting block) and a PPV/PMA block (emitting block) resulted in improved performance with luminance levels significantly higher than previously obtained for a single slab PPV/PMA device (typically > 100 cd/m2). It was also demonstrated that the presence of very thin (about 20–30 Å thick) insulating layers at the Al/polymer interface improves device efficiency by a factor of 2–4.

Surface polarization enhanced Seebeck effects in vertical multi-layer metal–polymer–metal thin-film devices

2014 ◽  
Vol 16 (40) ◽  
pp. 22201-22206 ◽  
Author(s):  
Qing Liu ◽  
Dehua Hu ◽  
Hongfeng Wang ◽  
Michael Stanford ◽  
Hsin Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Polarization ◽  
Metal Thin Film ◽  
Polymer Metal ◽  
Metal Polymer ◽  
Thin Film Devices

Charge transport mechanism in p-type copper ion containing triazine thiolate metallopolymer thin film devices

2017 ◽  
Vol 122 (16) ◽  
pp. 164504
Author(s):  
Deepak K ◽  
Amit Roy ◽  
P. Anjaneyulu ◽  
Sakthivel Kandaiah ◽  
Sampatrao L. Pinjare
Keyword(s):  
Thin Film ◽  
Charge Transport ◽  
Transport Mechanism ◽  
Copper Ion ◽  
Charge Transport Mechanism ◽  
P Type ◽  
Thin Film Devices

Thermal Stability of p-type Bi2Te3/Sb2Te3 and n-type Bi2Te3/Bi2Te2-xSex Thermoelectric Superlattice Thin Film Devices

2003 ◽  
Vol 793 ◽  
Author(s):  
K. D. Coonley ◽  
B. C. O'Quinn ◽  
J. C. Caylor ◽  
R. Venkatasubramanian
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Figure Of Merit ◽  
Elevated Temperatures ◽  
Power Conversion ◽  
Continuous Exposure ◽  
Thermoelectric Figure ◽  
P Type ◽  
Thermal Stability Of ◽  
Thin Film Devices

ABSTRACTThermolectric devices have been constructed using Bi2Te3/Sb2Te3 and Bi2Te3/Bi2Te2-xSex superlattice thin films. Since these devices are intended for use in systems that will operate at elevated temperatures over their lifetime as in many power conversion applications, thermal stability of the thermoelectric figure of merit is an important consideration. The ZTe of p-type and n-type superlattice thin film elements was evaluated at specific intervals during exposure to elevated temperatures of 150°C for up to 60 hrs. Results indicate that the figure of merit for p- and n-type superlattice films is not compromised over time when exposed to these operating temperatures. In fact, both p- and n-type superlattice thin film ZTe remains very constant or improves slightly when subjected to continuous exposure to elevated temperatures. Evaluation of these thin film thermoelements is reported and implications of these results are considered for thin film thermoelectric modules.

Galvanomagnetic thin film devices

1967 ◽  
Vol 34 (2) ◽  
pp. 97 ◽  
Author(s):  
H. Freller ◽  
K.G. Günther
Keyword(s):  
Thin Film ◽  
Thin Film Devices

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

scholarly journals A Multi Objective Evolutionary Algorithm for the Parameters Extraction of Organic Thin Film Transistors Models

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 939
Author(s):  
Rosario Schiano Lo Moriello ◽  
Davide Ruggiero ◽  
Leopoldo Angrisani ◽  
Enzo Caputo ◽  
Francesco de Pandi ◽  
...  
Keyword(s):  
Thin Film ◽  
Evolutionary Algorithm ◽  
Design Stage ◽  
Model Parameters ◽  
Organic Transistors ◽  
Organic Thin Film ◽  
Multi Objective ◽  
Application Fields ◽  
Channel Lengths ◽  
P Type

Thanks to their peculiar features, organic transistors are proving to be a valuable alternative to traditional semiconducting devices in several application fields; however, before releasing their exploitation, simulating their behaviour through adequate circuital models could be advisable during the design stage of electronic circuits and/or boards. Consequently, accurately extracting the parameter value of those models is fundamental to developing useful libraries for hardware design environments. To face the considered problem, the authors present a method based on successive application of Single- and Multi-Objective Evolutionary Algorithm for the optimal tuning of model parameters of organic transistors on thin film (OTFT). In particular, parameters are first roughly estimated to assure the best fit with the experimental transfer characteristics; the estimates are successively refined through the multi-objective strategy by also matching the values of the experimental mobility. The performance of the method has been assessed by estimating the parameters value of both P-type and N-type OTFTs characterized by different values of channel lengths; the obtained results evidence that the proposed method can obtain suitable parameters values for all the considered channel lengths.

scholarly journals Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

2021 ◽  
Vol 13 (3) ◽  
pp. 4156-4164
Author(s):  
Mari Napari ◽  
Tahmida N. Huq ◽  
David J. Meeth ◽  
Mikko J. Heikkilä ◽  
Kham M. Niang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Surface Passivation ◽  
Cu2o Thin Film ◽  
P Type
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