Galvanomagnetic thin film devices

1967 ◽  
Vol 34 (2) ◽  
pp. 97 ◽  
Author(s):  
H. Freller ◽  
K.G. Günther
Keyword(s):  
Thin Film ◽  
Thin Film Devices

scholarly journals Enabling bifacial thin film devices by developing a back surface field using CuxAlOy

Nano Energy ◽  
2021 ◽  
Vol 83 ◽  
pp. 105827
Author(s):  
Kamala Khanal Subedi ◽  
Adam B. Phillips ◽  
Niraj Shrestha ◽  
Fadhil K. Alfadhili ◽  
Anna Osella ◽  
...  
Keyword(s):  
Thin Film ◽  
Back Surface ◽  
Back Surface Field ◽  
Surface Field ◽  
Thin Film Devices

Transparent piezoelectric thin-film devices: Pb(Zr, Ti)O3 thin films on glass substrates

2021 ◽  
Vol 327 ◽  
pp. 112786
Author(s):  
Kazuki Ueda ◽  
Sang-Hyo Kweon ◽  
Hirotaka Hida ◽  
Yoshiharu Mukouyama ◽  
Isaku Kanno
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Glass Substrates ◽  
Piezoelectric Thin Film ◽  
Thin Film Devices

scholarly journals Implantable Thin Film Devices as Brain-Computer Interfaces: Recent Advances in Design and Fabrication Approaches

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 204
Author(s):  
Yuhao Zhou ◽  
Bowen Ji ◽  
Minghao Wang ◽  
Kai Zhang ◽  
Shuaiqi Huangfu ◽  
...  
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Future Research ◽  
Nano Fabrication ◽  
Computer Interfaces ◽  
Continuous Progress ◽  
Open Mesh ◽  
Remarkable Progress ◽  
Thin Film Devices ◽  
Made In

Remarkable progress has been made in the high resolution, biocompatibility, durability and stretchability for the implantable brain-computer interface (BCI) in the last decades. Due to the inevitable damage of brain tissue caused by traditional rigid devices, the thin film devices are developing rapidly and attracting considerable attention, with continuous progress in flexible materials and non-silicon micro/nano fabrication methods. Therefore, it is necessary to systematically summarize the recent development of implantable thin film devices for acquiring brain information. This brief review subdivides the flexible thin film devices into the following four categories: planar, open-mesh, probe, and micro-wire layouts. In addition, an overview of the fabrication approaches is also presented. Traditional lithography and state-of-the-art processing methods are discussed for the key issue of high-resolution. Special substrates and interconnects are also highlighted with varied materials and fabrication routines. In conclusion, a discussion of the remaining obstacles and directions for future research is provided.

Probe layer measurements of electroluminescence excitation in ac thin‐film devices

1981 ◽  
Vol 52 (5) ◽  
pp. 3590-3599 ◽  
Author(s):  
V. Marrello ◽  
L. Samuelson ◽  
A. Onton ◽  
W. Reuter
Keyword(s):  
Thin Film ◽  
Probe Layer ◽  
Thin Film Devices

Synthesis and Electrical Characterization of Multilayer Thin Films Designed by Layer-by-Layer Self Assembly of Nanoparticles

2010 ◽  
Vol 11 ◽  
pp. 1-6 ◽  
Author(s):  
Sujira Promnimit ◽  
Joydeep Dutta
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Self Organization ◽  
Colloidal Nanoparticles ◽  
Multilayer Thin Films ◽  
Layer By Layer ◽  
Multilayer Thin Film ◽  
Research Attention ◽  
Onset Voltage ◽  
Thin Film Devices

In this work, we report the directed self organization of multilayer thin film devices with colloidal nanoparticles through Layer-by-Layer (LbL) technique [1]. Self-organization of nanoparticles into assemblies to create novel nanostructures is getting increasing research attention in microelectronics, medical, energy and environmental applications. Directed self-organization of nanoparticles [2] into multilayer thin films were achieved by LbL growth through the interaction of oppositely charged of colloidal nanoparticles on substrates of any kind and shapes. Multilayer thin film devices were fabricated using multilayers of gold (conducting) nanoparticles separated by a dielectric nanoparticulate layer of zinc sulphide. The thin films obtained have been studied extensively and the changes in surface morphology, the optical absorption characteristics, thickness, uniformity, adhesion, and conduction behavior are reported. Current voltage (I-V) characteristics of multilayer devices with an increasing number of deposition cycles show an initial current blockade until an onset voltage value, which increases linearly upon the additional layers stacked in devices [3]. A conductive behavior of the device was observed upon exceeding the onset voltage. Moreover, I-V behavior showed that the conduction onset voltage increases linearly depending on the numbers of layers in the final device controlled by the deposition cycles. Systematic I-V characteristics in the forward and reverse biased conditions demonstrated rectifying behaviors in the onset of conduction voltage which makes these films attractive for future electronic device applications.

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