Low-Dimensional In2Se3 Compounds: From Material Preparations to Device Applications

ACS Nano ◽  
2021 ◽  
Author(s):  
Junye Li ◽  
Handong Li ◽  
Xiaobin Niu ◽  
Zhiming Wang
Keyword(s):  
Material Preparations ◽  
Device Applications ◽  
Low Dimensional

scholarly journals Terpyridine-derived perovskite single crystals with tunable structures and electronic dimensionality

RSC Advances ◽  
2021 ◽  
Vol 11 (40) ◽  
pp. 24816-24821
Author(s):  
Yaxuan Yuan ◽  
Yeming Xian ◽  
Yi Long ◽  
Yangyi Zhang ◽  
Naveed Ur Rahman ◽  
...  
Keyword(s):  
Single Crystals ◽  
Device Applications ◽  
Low Dimensional

Terpyridine-derived perovskite single crystals displaying tunable low-dimensional structures and outstanding optoelectronic performances suitable for device applications have been developed.

scholarly journals Liquid phase exfoliation of MoS2 and WS2 in aqueous ammonia and their application in highly efficient organic solar cells

2020 ◽  
Vol 8 (15) ◽  
pp. 5259-5264 ◽  
Author(s):  
Begimai Adilbekova ◽  
Yuanbao Lin ◽  
Emre Yengel ◽  
Hendrik Faber ◽  
George Harrison ◽  
...  
Keyword(s):  
Organic Solar Cells ◽  
Aqueous Ammonia ◽  
Transition Metal Dichalcogenides ◽  
Cost Effective ◽  
Metal Dichalcogenides ◽  
Device Applications ◽  
Effective Synthesis ◽  
Liquid Phase Exfoliation ◽  
Low Dimensional ◽  
Low Dimensional Materials

Simple, scalable and cost-effective synthesis of quality two-dimensional (2D) transition metal dichalcogenides (TMDs) is critical for fundamental investigations but also for the widespread adoption of these low-dimensional materials in an expanding range of device applications.

scholarly journals Recent Advances on In Situ SEM Mechanical and Electrical Characterization of Low-Dimensional Nanomaterials

Scanning ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-11 ◽  
Author(s):  
Chenchen Jiang ◽  
Haojian Lu ◽  
Hongti Zhang ◽  
Yajing Shen ◽  
Yang Lu
Keyword(s):  
Electromechanical Coupling ◽  
Electrical Characterization ◽  
Electrical Stimulus ◽  
Deformation And Failure ◽  
Advantages And Disadvantages ◽  
Mechanical And Electrical Properties ◽  
Recent Developments ◽  
Device Applications ◽  
Low Dimensional

In the past decades, in situ scanning electron microscopy (SEM) has become a powerful technique for the experimental study of low-dimensional (1D/2D) nanomaterials, since it can provide unprecedented details for individual nanostructures upon mechanical and electrical stimulus and thus uncover the fundamental deformation and failure mechanisms for their device applications. In this overview, we summarized recent developments on in situ SEM-based mechanical and electrical characterization techniques including tensile, compression, bending, and electrical property probing on individual nanostructures, as well as the state-of-the-art electromechanical coupling analysis. In addition, the advantages and disadvantages of in situ SEM tests were also discussed with some possible solutions to address the challenges. Furthermore, critical challenges were also discussed for the development and design of robust in situ SEM characterization platform with higher resolution and wider range of samples. These experimental efforts have offered in-depth understanding on the mechanical and electrical properties of low-dimensional nanomaterial components and given guidelines for their further structural and functional applications.

scholarly journals Intermediate-phase-assisted low-temperature formation of γ-CsPbI3 films for high-efficiency deep-red light-emitting devices

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Chang Yi ◽  
Chao Liu ◽  
Kaichuan Wen ◽  
Xiao-Ke Liu ◽  
Hao Zhang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Formation Energy ◽  
High Efficiency ◽  
Intermediate Phase ◽  
Light Emitting Diode ◽  
Red Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Device Applications ◽  
Low Dimensional

Abstract Black phase CsPbI3 is attractive for optoelectronic devices, while usually it has a high formation energy and requires an annealing temperature of above 300 °C. The formation energy can be significantly reduced by adding HI in the precursor. However, the resulting films are not suitable for light-emitting applications due to the high trap densities and low photoluminescence quantum efficiencies, and the low temperature formation mechanism is not well understood yet. Here, we demonstrate a general approach for deposition of γ-CsPbI3 films at 100 °C with high photoluminescence quantum efficiencies by adding organic ammonium cations, and the resulting light-emitting diode exhibits an external quantum efficiency of 10.4% with suppressed efficiency roll-off. We reveal that the low-temperature crystallization process is due to the formation of low-dimensional intermediate states, and followed by interionic exchange. This work provides perspectives to tune phase transition pathway at low temperature for CsPbI3 device applications.

DESIGNING TUNABLE ELECTRONIC AND MAGNETIC PROPERTIES OF GRAPHENE: A THEORETICAL PERSPECTIVE

2012 ◽  
Vol 26 (21) ◽  
pp. 1242003 ◽  
Author(s):  
ARUN K. MANNA ◽  
SWAPAN K. PATI
Keyword(s):  
Magnetic Properties ◽  
Electronic Device ◽  
Theoretical Perspective ◽  
Magnetic Characteristics ◽  
First Principles Calculations ◽  
Half Metal ◽  
Device Applications ◽  
Electro Magnetic ◽  
Low Dimensional ◽  
Low Dimensional Materials

The quest for novel low-dimensional materials has led to the discovery of graphene and thereafter, a tremendous attention has been paved in designing of its fascinating properties aiming in fabricating electronic devices. Using first-principles calculations, we study the structure, energetic and electronic as well as magnetic properties of graphene induced by the interactions in presence of both external and internal foreign agents in detail. We find that a variety of tunable electronic states, e.g., semiconductor-to-half-metal-to-metal and magnetic behaviors can be achieved under such hierarchical interactions and their influence. We also find that the nature and compositions of foreign substances play a key role in governing the electro-magnetic characteristics of these nanomaterials. In this review, we suggest a few routes for engineering the tunable graphene properties suitable for future electronic device applications.

MAN-MADE LOW-DIMENSIONAL SOLIDS: NEW CHALLENGES IN MICROSTRUCTURE MATERIALS SCIENCE

1993 ◽  
Vol 07 (15) ◽  
pp. 2743-2778 ◽  
Author(s):  
RICHARD NÖTZEL ◽  
KLAUS H. PLOOG
Keyword(s):  
Quantum Dot ◽  
Electronic Properties ◽  
Quantum Wire ◽  
Materials Science ◽  
Three Dimensions ◽  
Novel Device ◽  
Semiconductor Structures ◽  
Device Applications ◽  
Gaas Quantum Dot ◽  
Low Dimensional

Size quantization in man-made semiconductor structures of less than three-dimensions leads to exciting new electronic properties which are important for fundamental physics and for development of novel device concepts. Fundamental research as well as device applications based on these low-dimensional semiconductor structures require methods to fabricate the structures and to control their geometrical size on the nanometer scale in a reproducible manner. We introduce a new concept to directly synthesize III-V semiconductor quantum-wire and quantum-dot structures. The concept is based on the evolution of well ordered macrosteps (facets) on non-(100)-oriented GaAs surfaces during molecular beam epitaxy which allows us to produce arrays of alternating narrow and wide regions of GaAs in an AIAs matrix. This arrangement forms symmetric and asymmetric GaAs quantum-dot structures on (111) and (211) surfaces, respectively, and quantum-wire structures on (311) substrates. The accumulation of steps by step bunching on (210) GaAs makes possible the fabrication of mesoscopic step arrays in GaAs/AlAs multilayer structures having a periodicity of 230 Å. This periodicity is comparable to the exciton Bohr radius and thus of particular importance for the modulation of the electronic properties of GaAs based heterostructures. The existence of all these quantum-wire and quantum-dot structures is confirmed by high-resolution transmission-electron microscopy and atomic-force microscopy. The quantum confinement of carriers is revealed by the distinct electronic properties.

scholarly journals Tip-enhanced photoluminescence nano-spectroscopy and nano-imaging

Nanophotonics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 3089-3110 ◽  
Author(s):  
Hyeongwoo Lee ◽  
Dong Yun Lee ◽  
Min Gu Kang ◽  
Yeonjeong Koo ◽  
Taehyun Kim ◽  
...  
Keyword(s):  
Spatial Resolution ◽  
Near Field ◽  
High Sensitivity ◽  
Nano Scale ◽  
Biomedical Sensing ◽  
Enhanced Photoluminescence ◽  
Device Applications ◽  
Quantum Materials ◽  
Nano Imaging ◽  
Low Dimensional

AbstractPhotoluminescence (PL), a photo-excited spontaneous emission process, provides a wealth of optical and electronic properties of materials, which enable microscopic and spectroscopic imaging, biomedical sensing and diagnosis, and a range of photonic device applications. However, conventional far-field PL measurements have limitations in sensitivity and spatial resolution, especially to investigate single nano-materials or nano-scale dimension of them. In contrast, tip-enhanced photoluminescence (TEPL) nano-spectroscopy provides an extremely high sensitivity with <10 nm spatial resolution, which allows the desired nano-scale characterizations. With outstanding and unique optical properties, low-dimensional quantum materials have recently attracted much attention, and TEPL characterizations, i. e., probing and imaging, and even control at the nano-scale, have been extensively studied. In this review, we discuss the fundamental working mechanism of PL enhancement by plasmonic tip, and then highlight recent advances in TEPL studies for low-dimensional quantum materials. Finally, we discuss several remaining challenges of TEPL nano-spectroscopy and nano-imaging, such as implementation in non-ambient media and in situ environments, limitations in sample structure, and control of near-field polarization, with perspectives of the approach and its applications.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

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