Colossal Anomalous Hall Effect in Ferromagnetic van der Waals CrTe2

ACS Nano ◽  
2021 ◽  
Author(s):  
Meng Huang ◽  
Shanshan Wang ◽  
Zhaohao Wang ◽  
Ping Liu ◽  
Junxiang Xiang ◽  
...  
Keyword(s):  
Hall Effect ◽  
Van Der Waals ◽  
Anomalous Hall Effect

scholarly journals Anomalous Hall effect mechanisms in the quasi-two-dimensional van der Waals ferromagnet Fe0.29TaS2

2019 ◽  
Vol 100 (5) ◽  
Author(s):  
Ranran Cai ◽  
Wenyu Xing ◽  
Huibin Zhou ◽  
Boning Li ◽  
Yangyang Chen ◽  
...  
Keyword(s):  
Hall Effect ◽  
Van Der Waals ◽  
Anomalous Hall Effect ◽  
Two Dimensional

scholarly journals Natural van der Waals heterostructural single crystals with both magnetic and topological properties

2019 ◽  
Vol 5 (11) ◽  
pp. eaax9989 ◽  
Author(s):  
Jiazhen Wu ◽  
Fucai Liu ◽  
Masato Sasase ◽  
Koichiro Ienaga ◽  
Yukiko Obata ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Hall Effect ◽  
Exchange Coupling ◽  
Van Der Waals ◽  
Surface States ◽  
Anomalous Hall Effect ◽  
Topological Quantum ◽  
Magnetic Layers ◽  
Topological Surface ◽  
Ferromagnetic Hysteresis

Heterostructures having both magnetism and topology are promising materials for the realization of exotic topological quantum states while challenging in synthesis and engineering. Here, we report natural magnetic van der Waals heterostructures of (MnBi2Te4)m(Bi2Te3)n that exhibit controllable magnetic properties while maintaining their topological surface states. The interlayer antiferromagnetic exchange coupling is gradually weakened as the separation of magnetic layers increases, and an anomalous Hall effect that is well coupled with magnetization and shows ferromagnetic hysteresis was observed below 5 K. The obtained homogeneous heterostructure with atomically sharp interface and intrinsic magnetic properties will be an ideal platform for studying the quantum anomalous Hall effect, axion insulator states, and the topological magnetoelectric effect.

The current modulation of anomalous Hall effect in van der Waals Fe3GeTe2/WTe2 heterostructures

2020 ◽  
Vol 116 (9) ◽  
pp. 092401 ◽  
Author(s):  
Yan Shao ◽  
Wenxing Lv ◽  
Junjie Guo ◽  
Baotao Qi ◽  
Weiming Lv ◽  
...  
Keyword(s):  
Hall Effect ◽  
Van Der Waals ◽  
Anomalous Hall Effect ◽  
Current Modulation

MnPS3 spin-flop transition-induced anomalous Hall effect in graphite flake via van der Waals proximity coupling

Nanoscale ◽  
2020 ◽  
Vol 12 (45) ◽  
pp. 23266-23273
Author(s):  
Ying Zhang ◽  
Wenhui Wang ◽  
Meng Huang ◽  
Ping Liu ◽  
Guojing Hu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Exchange Coupling ◽  
Van Der Waals ◽  
Anomalous Hall Effect ◽  
Graphite Flake ◽  
Two Dimensional ◽  
Spin Flop Transition ◽  
Highly Efficient ◽  
Proximity Coupling

Detection of the antiferromagnetic (AFM) state is an important issue for the application of two-dimensional (2D) antiferromagnets in spintronics, and interfacial exchange coupling is a highly efficient means to detect AFM order.

scholarly journals Anomalous Hall effect in the van der Waals bonded ferromagnet Fe3−xGeTe2

2018 ◽  
Vol 97 (16) ◽  
Author(s):  
Yu Liu ◽  
Eli Stavitski ◽  
Klaus Attenkofer ◽  
C. Petrovic
Keyword(s):  
Hall Effect ◽  
Van Der Waals ◽  
Anomalous Hall Effect

scholarly journals Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  
Keyword(s):  
Hall Effect ◽  
Electric Fields ◽  
First Principles ◽  
Berry Phase ◽  
Condensed Matter ◽  
Anomalous Hall Effect ◽  
First Principles Calculations ◽  
Sign Reversal ◽  
Berry Curvature ◽  
Topological Materials

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.

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