Perovskite Core–Shell Nanowire Transistors: Interfacial Transfer Doping and Surface Passivation

ACS Nano ◽  
2020 ◽  
Vol 14 (10) ◽  
pp. 12749-12760
Author(s):  
You Meng ◽  
Zhengxun Lai ◽  
Fangzhou Li ◽  
Wei Wang ◽  
SenPo Yip ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Core Shell ◽  
Nanowire Transistors ◽  
Interfacial Transfer

Balancing Electron Transfer and Surface Passivation in Gradient CdSe/ZnS Core–Shell Quantum Dots Attached to ZnO

2013 ◽  
Vol 4 (11) ◽  
pp. 1760-1765 ◽  
Author(s):  
Mohamed Abdellah ◽  
Karel Žídek ◽  
Kaibo Zheng ◽  
Pavel Chábera ◽  
Maria E. Messing ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Transfer ◽  
Surface Passivation ◽  
Core Shell

SYNTHESIS AND CHARACTERIZATION OF CdSe/ZnO CORE/SHELL NANOCRYSTALS

2006 ◽  
Vol 05 (02n03) ◽  
pp. 299-306 ◽  
Author(s):  
QIANG LU ◽  
GUIYE SHAN ◽  
YUBAI BAI ◽  
LIMIN AN
Keyword(s):  
Surface Passivation ◽  
Wide Band ◽  
Gap Effect ◽  
Trioctylphosphine Oxide ◽  
Cdse Nanocrystals ◽  
Core Shell ◽  
Transmission Electron Micrograph ◽  
Wide Band Gap ◽  
Fluorescent Intensity ◽  
Transmission Electron

Highly luminescent monodispersed CdSe nanocrystals were prepared from CdO and Se powder in a three-component hexadecylamine-trioctylphosphine oxide-trioctylphosphine (HAD-TOPO-TOP) mixture under high temperature and nitrogen protection. CdSe/ZnO core/shell nanocrystals were produced by adding Zn(Ac) 2 and LiOH into CdSe nanocrystals solution under ultrasonic at low temperature. ZnO shell grows heterogeneously on the CdSe substrate. The structure and fluorescence have been characterized by TEM (transmission electron micrograph), XRD (X-ray diffraction), UV-Vis and PL spectra. It can be found that after the surface passivation with ZnO shell, electrons were confined in the CdSe core due to the wide band-gap effect of ZnO , which resulted in the obvious increasing of the fluorescent intensity.

Graphene Gated SiO2 Core-shell Silicon Nanowire Transistors

2011 ◽  
Author(s):  
J. E. Jin ◽  
J. H. Lee ◽  
D. H. Hwang ◽  
D. W. Kim ◽  
M. J. Kim ◽  
...  
Keyword(s):  
Silicon Nanowire ◽  
Core Shell ◽  
Nanowire Transistors

Formation of Ge–GeS core–shell nanostructures via solid-state sulfurization of Ge nanowires

CrystEngComm ◽  
2018 ◽  
Vol 20 (15) ◽  
pp. 2193-2200 ◽  
Author(s):  
Courtney Keiser ◽  
Peter Sutter ◽  
Eli Sutter
Keyword(s):  
Solid State ◽  
Surface Passivation ◽  
Core Shell ◽  
Oxidation Protection ◽  
Shell Nanostructures

Solid-state sulfurization of Ge nanowires results in formation of layered GeS shells that provide surface passivation and oxidation protection.

Top-Down Fabrication of Epitaxial SiGe/Si Multi-(Core/Shell) p-FET Nanowire Transistors

2014 ◽  
Vol 61 (4) ◽  
pp. 953-956 ◽  
Author(s):  
Sylvain Barraud ◽  
Jean-Michel Hartmann ◽  
Virginie Maffini-Alvaro ◽  
Lucie Tosti ◽  
Vincent Delaye ◽  
...  
Keyword(s):  
Core Shell ◽  
Top Down ◽  
Nanowire Transistors

Characterization of Shell Material on Colloidal CdSe/ZnS Quantum Dots

2004 ◽  
Vol 818 ◽  
Author(s):  
Zhiheng Yu ◽  
Li Guo ◽  
Hui Du ◽  
Todd Krauss ◽  
John Silcox
Keyword(s):  
Quantum Dots ◽  
Surface Passivation ◽  
Core Shell ◽  
Shell Material ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Chemical Distribution ◽  
Electron Energy Loss

AbstractScanning transmission electron microscopy (STEM) coupled with electron energy loss spectroscopy (EELS) was used to determine the distribution of ZnS shell material on colloidal core-shell CdSe/ZnS quantum dots (QDs). A sub-nm electron probe was placed at various locations on core-shell QDs to ascertain the chemical distribution of the shell material. While a definite shell of ZnS was detected surrounding the CdSe core, the integrated EELS signals from positions around the QD suggest the distribution of the shell material may not be uniform. A non-uniform shell implies a reduced quality of the QD surface passivation.

PbS/CdS Core/Shell Nanocrystals For Solution-Processed Colloidal Quantum Dot Solar Cells

2014 ◽  
Vol 1748 ◽  
Author(s):  
Darren C. J. Neo ◽  
Cheng Cheng ◽  
Hazel E. Assender ◽  
Andrew A. R. Watt
Keyword(s):  
Surface Passivation ◽  
Surface Defects ◽  
Cadmium Sulphide ◽  
Open Circuit ◽  
Core Shell ◽  
Photovoltaic Devices ◽  
Lead Sulphide ◽  
Solid Films ◽  
Quantum Dot Solar Cells ◽  
Colloidal Quantum Dot

ABSTRACTAn epitaxial shell of cadmium sulphide is grown on lead sulphide quantum dots in order to reduce the concentration of surface defects. Thin solid films of these core/shell materials are found to have low carrier concentrations due to effective surface passivation which reduces the number of dangling bonds. In this paper PbS/CdS is used as a quasi-intrinsic layer in p-i-n photovoltaic devices where PbS acts as the p-layer and ZnO the n-layer. By studying different permutations of these layers and the degree of PbS p-type doping by annealing we optimise fill factor and open-circuit voltage.

scholarly journals Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy

2012 ◽  
Vol 2012 ◽  
pp. 1-29 ◽  
Author(s):  
K. Hiruma ◽  
K. Tomioka ◽  
P. Mohan ◽  
L. Yang ◽  
J. Noborisaka ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Surface Passivation ◽  
Substrate Surface ◽  
Semiconductor Nanowires ◽  
Vapor Phase Epitaxy ◽  
Core Shell ◽  
Photoluminescence Intensity ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic

The fabrication of GaAs- and InP-based III-V semiconductor nanowires with axial/radial heterostructures by using selective-area metal-organic vapor-phase epitaxy is reviewed. Nanowires, with a diameter of 50–300 nm and with a length of up to 10 μm, have been grown along the〈111〉B or〈111〉A crystallographic orientation from lithography-defined SiO2mask openings on a group III-V semiconductor substrate surface. An InGaAs quantum well (QW) in GaAs/InGaAs nanowires and a GaAs QW in GaAs/AlGaAs or GaAs/GaAsP nanowires have been fabricated for the axial heterostructures to investigate photoluminescence spectra from QWs with various thicknesses. Transmission electron microscopy combined with energy dispersive X-ray spectroscopy measurements have been used to analyze the crystal structure and the atomic composition profile for the nanowires. GaAs/AlGaAs, InP/InAs/InP, and GaAs/GaAsP core-shell structures have been found to be effective for the radial heterostructures to increase photoluminescence intensity and have enabled laser emissions from a single GaAs/GaAsP nanowire waveguide. The results have indicated that the core-shell structure is indispensable for surface passivation and practical use of nanowire optoelectronics devices.

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