Formation of Highly Active NiO(OH) Thin Films from Electrochemically Deposited Ni(OH)2 by a Simple Thermal Treatment at a Moderate Temperature: A Combined Electrochemical and Surface Science Investigation

ACS Catalysis ◽  
2022 ◽  
pp. 1508-1519
Author(s):  
Shasha Tao ◽  
Qingbo Wen ◽  
Wolfram Jaegermann ◽  
Bernhard Kaiser
Keyword(s):  
Thin Films ◽  
Thermal Treatment ◽  
Surface Science ◽  
Moderate Temperature ◽  
Science Investigation ◽  
Highly Active ◽  
Electrochemically Deposited

The effects of thermal treatment on structural, morphological and optical properties of electrochemically deposited Bi2S3 thin films

2017 ◽  
Vol 626 ◽  
pp. 9-16 ◽  
Author(s):  
M. Riahi ◽  
C. Martínez-Tomás ◽  
S. Agouram ◽  
A. Boukhachem ◽  
H. Maghraoui-Meherzi
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Treatment ◽  
Electrochemically Deposited

scholarly journals Influence of the crystallization thermal treatment on the structural and electrical properties of PZT thin films

2004 ◽  
Vol 7 (2) ◽  
pp. 363-367 ◽  
Author(s):  
Antonio Leondino Bacichetti Junior ◽  
Manuel Henrique Lente ◽  
Ricardo Gonçalves Mendes ◽  
Pedro Iris Paulin Filho ◽  
José Antonio Eiras
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Treatment ◽  
Pzt Thin Films ◽  
Structural And Electrical Properties

scholarly journals The Growth of Semiconductor Thin Films Studied by RHEED

1990 ◽  
Vol 43 (5) ◽  
pp. 583
Author(s):  
GL Price
Keyword(s):  
Thin Films ◽  
Surface Science ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
Large Area ◽  
Growth Modes ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Recent Developments

Recent developments in the growth of semiconductor thin films are reviewed. The emphasis is on growth by molecular beam epitaxy (MBE). Results obtained by reflection high energy electron diffraction (RHEED) are employed to describe the different kinds of growth processes and the types of materials which can be constructed. MBE is routinely capable of heterostructure growth to atomic precision with a wide range of materials including III-V, IV, II-VI semiconductors, metals, ceramics such as high Tc materials and organics. As the growth proceeds in ultra high vacuum, MBE can take advantage of surface science techniques such as Auger, RHEED and SIMS. RHEED is the essential in-situ probe since the final crystal quality is strongly dependent on the surface reconstruction during growth. RHEED can also be used to calibrate the growth rate, monitor growth kinetics, and distinguish between various growth modes. A major new area is lattice mismatched growth where attempts are being made to construct heterostructures between materials of different lattice constants such as GaAs on Si. Also described are the new techniques of migration enhanced epitaxy and tilted superlattice growth. Finally some comments are given On the means of preparing large area, thin samples for analysis by other techniques from MBE grown films using capping, etching and liftoff.

scholarly journals Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Indium Tin Oxide ◽  
Seed Layer ◽  
Room Temperature ◽  
Low Cost ◽  
Temperature Dependent ◽  
Temperature Heat ◽  
Electrochemically Deposited

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.

Formation mechanisms of ZnO amorphous layers due to thermal treatment of ZnO thin films grown on p‐InP (100) substrates

2008 ◽  
Vol 103 (8) ◽  
pp. 083535
Author(s):  
J. M. Yuk ◽  
J. Y. Lee ◽  
Y. S. No ◽  
T. W. Kim ◽  
W. K. Choi
Keyword(s):  
Thin Films ◽  
Thermal Treatment ◽  
Zno Thin Films ◽  
Formation Mechanisms

Thermally Prepared Mn2O3/RuO2/Ru Thin Films as Highly Active Catalysts for the Oxygen Evolution Reaction in Alkaline Media

2016 ◽  
Vol 3 (11) ◽  
pp. 1847-1855 ◽  
Author(s):  
Michelle P. Browne ◽  
Hugo Nolan ◽  
Brendan Twamley ◽  
Georg S. Duesberg ◽  
Paula E. Colavita ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Evolution ◽  
Oxygen Evolution Reaction ◽  
Alkaline Media ◽  
Highly Active

Thermal stability and miscibility of co-evaporated methyl ammonium lead halide (MAPbX3, X = I, Br, Cl) thin films analysed by in situ X-ray diffraction

2018 ◽  
Vol 6 (24) ◽  
pp. 11496-11506 ◽  
Author(s):  
Paul Pistor ◽  
Thomas Burwig ◽  
Carlo Brzuska ◽  
Björn Weber ◽  
Wolfgang Fränzel
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Thermal Treatment ◽  
Phase Evolution ◽  
X Ray Diffraction ◽  
Crystalline Phases ◽  
X Ray ◽  
Subsequent Thermal Treatment ◽  
Lead Halide

We present the identification of crystalline phases by in situ X-ray diffraction during growth and monitor the phase evolution during subsequent thermal treatment of CH3NH3PbX3 (X = I, Br, Cl) perovskite thin films.

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