scholarly journals p-Type Epitaxial Graphene on Cubic Silicon Carbide on Silicon for Integrated Silicon Technologies

2019 ◽  
Vol 3 (1) ◽  
pp. 830-841 ◽  
Author(s):  
Aiswarya Pradeepkumar ◽  
Mojtaba Amjadipour ◽  
Neeraj Mishra ◽  
Chang Liu ◽  
Michael S. Fuhrer ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Graphene ◽  
P Type ◽  
Cubic Silicon Carbide

Properties of Nanocrystalline 3C-SiC:H and SiC:Ge:H Films Deposited at Low Substrate Temperatures

2006 ◽  
Vol 910 ◽  
Author(s):  
Shinsuke Miyajima ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Germanium Alloy ◽  
Temperature Deposition ◽  
P Type ◽  
Cubic Silicon Carbide ◽  
Charged Defects ◽  
Substrate Temperatures

AbstractWe have investigated properties of nanocrystalline hydrogenated cubic silicon carbide (nc-3C-SiC:H) and silicon carbide: germanium alloy (nc-SiC:Ge:H) films deposited by hot-wire chemical vapor deposition (HWCVD) at low temperatures of about 300°C. we found that the density of charged defects was strongly influenced by grain size of the films. In-situ doping into nc-3C-SiC:H films was also carried out. N-type nc-3C-SiC:H films were successfully deposited by using phosphine (PH3) and hexamethyldisilazane (HMDS) as dopants. We found that HMDS is an effective n-type dopant for low temperature deposition of nc-3C-SiC:H films by HWCVD. For the deposition of p-type nc-3C-SiC:H with trimethylaluminum (TMA), it was found that the substrate temperature of above 300°C is required to activate the acceptors. We added dimethylgermane (DMG) into mixture of MMS and H2 to prepare nc-SiC:Ge:H films. The nc-SiC:Ge:H films with Ge mole fraction of 1.9% were successfully deposited.

Estimation of the Crystallinity of P-type Hydrogenated Nanocrystalline Cubic Silicon Carbide by Conductive Atomic Force Microscopy

2012 ◽  
Vol 1426 ◽  
pp. 347-352
Author(s):  
Daisuke Hamashita ◽  
Yasuyoshi Kurokawa ◽  
Makoto Konagai
Keyword(s):  
Silicon Carbide ◽  
Atomic Force Microscopy ◽  
Volume Fraction ◽  
Crystalline Silicon ◽  
Conductive Atomic Force Microscopy ◽  
Raman Scattering Spectroscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
P Type ◽  
Cubic Silicon Carbide

ABSTRACTP-type hydrogenated nanocrystalline cubic silicon carbide is a promising material for the emitter of n-type crystalline silicon heterojunction solar cell due to its lower light absorption and wider bandgap of 2.2 eV. The electrical properties of hydrogenated nanocrystalline cubic silicon carbide can be influenced by its crystallinity. In this study, we propose the use of conductive atomic force microscopy (Conductive-AFM) to evaluate the crystalline volume fraction (fc) of p-nc-3C-SiC:H thin films (20∼30 nm) as a new method instead of Raman scattering spectroscopy, X-ray diffraction, and spectroscopic ellipsometry.

Native Defects, Diffusion, Self-Compensation, and Boron Doping in Cubic Silicon Carbide

1989 ◽  
Vol 162 ◽  
Author(s):  
C. Wang ◽  
J. Bemholc ◽  
R. F. Davis
Keyword(s):  
Silicon Carbide ◽  
Fermi Level ◽  
Theoretical Investigation ◽  
Boron Doping ◽  
Native Defects ◽  
Heavily Doped ◽  
Rich Material ◽  
P Type ◽  
Cubic Silicon Carbide

ABSTRACTWe report the results of a comprehensive theoretical investigation of the effects of stoichiometry and boron doping on the properties of cubic SiC. Supercell calculations using ab initio pseudopotentials show that the lowest energy defect in Si-rich n-type and intrinsic SiC is the electrically inactive Sic antisite, while VC++ is the lowest energy defect in p-type SiC. The electrons released by the carbon vacancies compensate acceptor dopants and lead to strong self-compensation effects when doping occurs during the growth of crystal. In C-rich SiC the dominant defect for all Fermi level positions is the electrically inactive CSi antisite. In stoichiometric and Si-rich cubic SiC, the BC site is energetically preferred, while BC and BSi have similar incorporation energies in C-rich material. In heavily doped p-type SiC the diffusion of BC proceeds by the dissociative (Frank-Turnbull) mechanism.

scholarly journals Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

2019 ◽  
Vol 93 ◽  
pp. 295-298 ◽  
Author(s):  
M. Spera ◽  
G. Greco ◽  
R. Lo Nigro ◽  
C. Bongiorno ◽  
F. Giannazzo ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contacts ◽  
P Type ◽  
Cubic Silicon Carbide

Anodic etching of p-type cubic silicon carbide

1992 ◽  
Vol 3 (3) ◽  
pp. 162-163 ◽  
Author(s):  
G. L. Harris ◽  
K. Fekade ◽  
K. Wongchotigul
Keyword(s):  
Silicon Carbide ◽  
Anodic Etching ◽  
P Type ◽  
Cubic Silicon Carbide

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

Theoretical study of intrinsic defects in cubic silicon carbide 3C -SiC

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Peter A. Schultz ◽  
Renee M. Van Ginhoven ◽  
Arthur H. Edwards
Keyword(s):  
Silicon Carbide ◽  
Theoretical Study ◽  
Intrinsic Defects ◽  
Cubic Silicon Carbide
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