Nanoscale Heterogeneities in Monolayer MoSe2 Revealed by Correlated Scanning Probe Microscopy and Tip-Enhanced Raman Spectroscopy

2018 ◽  
Vol 1 (2) ◽  
pp. 572-579 ◽  
Author(s):  
Kirby K. H. Smithe ◽  
Andrey V. Krayev ◽  
Connor S. Bailey ◽  
Hye Ryoung Lee ◽  
Eilam Yalon ◽  
...  
2009 ◽  
Vol 17 (3) ◽  
pp. 36-37
Author(s):  
Carlos A. Barrios ◽  
Andrey V. Malkovskiy ◽  
Alexander Kisliuk ◽  
Alexei P. Sokolov ◽  
Mark D. Foster

Resonant plasmon excitations at the surface of noble metals can localize and amplify an electromagnetic field in a very small volume and are the enabling element of surface enhanced optical microscopies. Tip enhanced Raman spectroscopy (TERS) combines scanning probe microscopy (SPM) with Raman spectroscopy, taking advantage of this enhancing mechanism. So far a 20 nm lateral resolution in chemical imaging of a surface has been achieved. So far a 20 nm lateral resolution in chemical imaging of a surface has been achieved.


2016 ◽  
Vol 22 (S3) ◽  
pp. 218-219
Author(s):  
Anton V. Ievlev ◽  
Michael A. Susner ◽  
Michael A. McGuire ◽  
Petro Maksymovych ◽  
Sergei V. Kalinin

Author(s):  
Sung Park ◽  
Katie Park ◽  
Derek Nowak ◽  
Tom Albrecht ◽  
Erin Leigh Wood ◽  
...  

Abstract Carrier mobility enhancement through local strain in silicon is a means of improving transistor performance. Among the scanning probe microscopy based techniques, tip-enhanced Raman spectroscopy (TERS) has shown some promising results in measuring strain. However, TERS is known to depend critically on the quality of the plasmonic tip, which is difficult to control. In this study, a test structure is used to demonstrate the capability of photo-induced force microscopy with infrared excitation (IR PiFM) in direct measurement of strain with approximately 10 nm spatial resolution. For SiGe pitch less than about 800 nm, the region between the SiGe lines should maintain residual strain. For a region with SiGe pitch of 1000 nm, it is verified that the strain between the SiGe lines is fully relaxed. PiFM promises to be a powerful tool for studying nanoscale strain in diverse material.


Author(s):  
Kevin M. Shakesheff ◽  
Martyn C. Davies ◽  
Clive J. Roberts ◽  
Saul J. B. Tendler ◽  
Philip M. Williams

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