Orientation-Dependent Electronic and Mechanical Properties of Tungsten Nitride Nanosheets: Implications for Flexible Devices

2021 ◽  
Author(s):  
Lokanath Patra ◽  
Govind Mallick ◽  
Ravindra Pandey
Keyword(s):  
Mechanical Properties ◽  
Tungsten Nitride ◽  
Flexible Devices

Microstructural and Mechanical Properties of Nanostructured Tungsten Nitride Thin Films Prepared by RF Reactive Magnetron Sputtering

2018 ◽  
Vol 24 (8) ◽  
pp. 5872-5876
Author(s):  
G Balakrishnan ◽  
V Sathiyaraj ◽  
M Dinesh ◽  
P. Naveen Chandran ◽  
C Thamotharan
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Nitrogen Content ◽  
High Hardness ◽  
Reactive Magnetron Sputtering ◽  
Tungsten Nitride ◽  
Reactive Magnetron ◽  
Microstructural Property ◽  
Steel Substrates

In the present work, nanostructured tungsten nitride (WN) thin films were deposited by RF reactive magnetron sputtering technique in a mixture of N2 and Argon atmosphere and its microstructure and mechanical properties were investigated. The Argon pressure was kept constant at 20 sccm, while the N2 partial pressures were varied (3%, 5%, 10% and 15%). The WN thin films are deposited on SS304 stainless steel substrates at a temperature of 500 °C. The microstructural property was analyzed using X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) and mechanical properties were evaluated by nanoindentation technique. The XRD studies indicated the formation of different phases as a function of nitrogen content. The hardness and the young’s modulus values were in the range 27–39 GPa and 239–280 GPa, respectively. The high hardness values correspond to the coatings with the low nitrogen content and vice-versa. The mechanical properties of the tungsten nitride coatings were strongly influenced by the microstructure.

Experimental Investigation on the Mechanical Properties of Thin Beams Built by Electron Beam Melting Technology and Ti6Al4V Material

2020 ◽  
Vol 1015 ◽  
pp. 25-29
Author(s):  
Minh Tuan Pham ◽  
Song Huat Yeo ◽  
Tat Joo Teo ◽  
Pan Wang ◽  
Mui Ling Sharon Nai
Keyword(s):  
Mechanical Properties ◽  
Experimental Investigation ◽  
Electron Beam ◽  
Elastic Deformation ◽  
Electron Beam Melting ◽  
Experimental Results ◽  
Effective Thickness ◽  
Melting Technology ◽  
Flexible Devices ◽  
Thin Beams

Electron beam melting (EBM) technology has been popularly used to fabricate flexible devices that performance is directly determined by the elastic deformation of thin beams/flexures. This paper presents the experimental investigation on the effective thickness which determines the mechanical properties of beam-based flexures built by EBM method and Ti6Al4V material. The findings show that the effective thickness of EBM-printed beams is different from the designed value regarding to the building direction. A coefficient factor is proposed to compensate this difference. The experimental results suggest that with EBM-printed flexures having large thickness of ≥ 0.7 mm, the coefficient factors become consistent.

High-performance III–VI monolayer transistors for flexible devices

2020 ◽  
Vol 22 (13) ◽  
pp. 7039-7047 ◽  
Author(s):  
Jianhui Chen ◽  
Shuchang Cai ◽  
Rui Xiong ◽  
Baisheng Sa ◽  
Cuilian Wen ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Density Functional Theory ◽  
Quantum Transport ◽  
High Performance ◽  
Density Functional ◽  
Density Functional Theory Calculations ◽  
Device Performance ◽  
Functional Theory ◽  
Group Iii ◽  
Flexible Devices

The mechanical properties of group III–VI monolayers and sub-10 nm scale device performance of corresponding MOSFETs have been investigated by using density functional theory calculations as well as ab initio quantum transport simulations.

scholarly journals Effect of bias induced microstructure on the mechanical properties of nanocrystalline zirconium tungsten nitride coatings

2017 ◽  
Vol 313 ◽  
pp. 121-128 ◽  
Author(s):  
P. Dubey ◽  
G. Martinez ◽  
S. Srivastava ◽  
R. Chandra ◽  
C.V. Ramana
Keyword(s):  
Mechanical Properties ◽  
Tungsten Nitride ◽  
Nitride Coatings

A study of structural and mechanical properties of nano-crystalline tungsten nitride film synthesis by plasma focus

2015 ◽  
Vol 170 (2) ◽  
pp. 73-83 ◽  
Author(s):  
Ali Hussnain ◽  
Rajdeep Singh Rawat ◽  
Riaz Ahmad ◽  
Tousif Hussain ◽  
Z. A. Umar ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Plasma Focus ◽  
Nitride Film ◽  
Tungsten Nitride ◽  
Nano Crystalline ◽  
Film Synthesis

scholarly journals Mechanical Behavior of Spin-Coated Sb2S3 light Absorption Thin Films

2021 ◽  
Vol 59 (1) ◽  
pp. 1-7
Author(s):  
Mao Zhang ◽  
Dayoung Yoo ◽  
Youngseon Jeon ◽  
Dongyun Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Light Absorption ◽  
Indentation Test ◽  
Flexible Devices ◽  
Heat Treated ◽  
Coating Method ◽  
Continuous Stiffness Measurement ◽  
Fto Glass

To measure the mechanical properties of Sb2S3, a two-component compound semiconductor used in the light absorption layer of a solar cell, Sb2S3 thin films were formed on FTO glass using the spin coating method. The spin-coated Sb2S3 thin films were heat-treated at 200 <sup>o</sup>C in an Ar atmosphere for up to 1 hour to form a thin film with continuous crystalline structures. A nanoindentation system was used to measure the mechanical properties of the spin-coated Sb2S3 thin films, and the phenomena appearing during indentation were analyzed. We used the continuous stiffness measurement (CSM) technique, and Young's modulus and hardness measured with the indentation depth of 250 nm were about 53.1 GPa and 1.43 GPa, respectively. The results were analyzed and compared with literature values, which varied from 40 GPa for the nanowire forms of Sb2S3 to 117 GPa, based upon simulation results. Since there are few studies on the mechanical properties of spin-coated Sb2S3 thin films, the results of this study are worthwhile. Besides, we observed that the Sb2S3 thin film had a little brittleness in the indentation test at higher load, and the microstructure was pushed around the indenter depending on the degree of bonding to the FTO glass substrate. This is a matter to be considered when making flexible devices in the future.

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