Nonthermal Plasma Synthesis of Gallium Nitride Nanoparticles: Implications for Optical and Electronic Applications

2021 ◽  
Author(s):  
Alexander Ho ◽  
Rajib Mandal ◽  
Richard R. Lunt ◽  
Rebecca J. Anthony
Keyword(s):  
Gallium Nitride ◽  
Nonthermal Plasma ◽  
Plasma Synthesis ◽  
Gallium Nitride Nanoparticles

Plasma Synthesis of Light Emitting Gallium Nitride Nanoparticles Using a Novel Microwave-Resonant Cavity

2006 ◽  
Vol 45 (1A) ◽  
pp. 328-332 ◽  
Author(s):  
Manabu Shimada ◽  
Yasushi Azuma ◽  
Kikuo Okuyama ◽  
Yutaka Hayashi ◽  
Eiji Tanabe
Keyword(s):  
Gallium Nitride ◽  
Resonant Cavity ◽  
Plasma Synthesis ◽  
Light Emitting ◽  
Microwave Resonant Cavity ◽  
Gallium Nitride Nanoparticles

Ternary SiGeSn alloy nanocrystals via nonthermal plasma synthesis

2021 ◽  
Author(s):  
Gregory F. Pach ◽  
Fernando Urias-Cordero ◽  
Sadegh Yazdi ◽  
Nathan R Neale
Keyword(s):  
Nonthermal Plasma ◽  
Plasma Synthesis ◽  
Alloy Nanocrystals

scholarly journals Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review

Micromachines ◽  
2016 ◽  
Vol 7 (9) ◽  
pp. 121 ◽  
Author(s):  
Yucheng Lan ◽  
Jianye Li ◽  
Winnie Wong-Ng ◽  
Rola Derbeshi ◽  
Jiang Li ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Free Standing ◽  
Gallium Nitride Nanoparticles

scholarly journals Aluminum Oxide Nanoparticle Films Deposited from a Nonthermal Plasma: Synthesis, Characterization, and Crystallization

ACS Omega ◽  
2020 ◽  
Vol 5 (38) ◽  
pp. 24754-24761
Author(s):  
Zhaohan Li ◽  
Parker R. Wray ◽  
Magel P. Su ◽  
Qiaomiao Tu ◽  
Himashi P. Andaraarachchi ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Nonthermal Plasma ◽  
Plasma Synthesis ◽  
Nanoparticle Films ◽  
Oxide Nanoparticle

scholarly journals Growth of Oriented Thick Films of Gallium Nitride from the Melt

1999 ◽  
Vol 4 (S1) ◽  
pp. 227-232 ◽  
Author(s):  
Jeffrey S. Dyck ◽  
Kathleen Kash ◽  
Michael T. Grossner ◽  
Cliff C. Hayman ◽  
Alberto Argoitia ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Gallium Nitride ◽  
Microwave Plasma ◽  
Thick Films ◽  
Attractive Alternative ◽  
Plasma Synthesis ◽  
Atomic Nitrogen ◽  
X Ray Diffraction ◽  
Phonon Modes ◽  
X Ray

While significant strides have been made in the optimization of GaN-based devices on foreign substrates, a more attractive alternative would be homoepitaxy on GaN substrates. The primary motivation of this work is to explore the growth of thick films of GaN from the melt for the ultimate use as substrate material. We have previously demonstrated the synthesis of polycrystalline, wurtzitic gallium nitride and indium nitride by saturating gallium metal and indium metal with atomic nitrogen from a microwave plasma source. Plasma synthesis avoids the high equilibrium pressures required when molecular nitrogen is used as the nitrogen source. Here we report the growth of thick oriented GaN layers using the same technique by the introduction of (0001) sapphire into the melt to serve as a substrate. The mechanism of this growth is not established, but may involve transport of the metal as a liquid film onto the sapphire and subsequent reaction with atomic nitrogen. The films were characterized by x-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. X-ray diffraction showed that the GaN films were oriented with their c-axes parallel to the sapphire c-axis. The TEM analysis confirmed the orientation and revealed a dislocation density of approximately 1010 cm−2. The E2 Raman active phonon modes were observed in the GaN films.

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