scholarly journals Boron- and phosphorus-doped silicon germanium alloy nanocrystals—Nonthermal plasma synthesis and gas-phase thin film deposition

APL Materials ◽  
2014 ◽  
Vol 2 (2) ◽  
pp. 022104 ◽  
Author(s):  
David J. Rowe ◽  
Uwe R. Kortshagen
Keyword(s):  
Gas Phase ◽  
Silicon Germanium ◽  
Nonthermal Plasma ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Plasma Synthesis ◽  
Alloy Nanocrystals ◽  
Doped Silicon ◽  
Germanium Alloy ◽  
Phosphorus Doped

Ternary SiGeSn alloy nanocrystals via nonthermal plasma synthesis

2021 ◽  
Author(s):  
Gregory F. Pach ◽  
Fernando Urias-Cordero ◽  
Sadegh Yazdi ◽  
Nathan R Neale
Keyword(s):  
Nonthermal Plasma ◽  
Plasma Synthesis ◽  
Alloy Nanocrystals

Colloidal hydrophilic silicon germanium alloy nanocrystals with a high boron and phosphorus concentration shell

2014 ◽  
Vol 2 (28) ◽  
pp. 5644-5650 ◽  
Author(s):  
Takashi Kanno ◽  
Minoru Fujii ◽  
Hiroshi Sugimoto ◽  
Kenji Imakita
Keyword(s):  
Cross Section ◽  
Silicon Germanium ◽  
Band Gap Energy ◽  
Phosphorus Concentration ◽  
Gap Energy ◽  
Alloy Nanocrystals ◽  
Enhanced Absorption ◽  
Si Nanocrystals ◽  
Germanium Alloy ◽  
High Boron

Si1−xGex alloy nanocrystals potentially have superior properties compared to Si nanocrystals such as an enhanced absorption cross-section and wider controllability of the band gap energy.

MPI/MS Studies of Thin Film Deposition Processes: Methyl Production from Trimethylgallium Decomposition and the Effect of Added Hydrazine

1985 ◽  
Vol 54 ◽  
Author(s):  
D. W. Squire ◽  
C. S. Dulcey ◽  
M. C. Lin
Keyword(s):  
Thin Film ◽  
Gas Phase ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Radical Reactions ◽  
Ionization Mass ◽  
Methyl Radicals ◽  
Mass Analysis ◽  
Deposition Mechanism ◽  
Deposition Processes

ABSTRACTThe low pressure pyrolysis of alkylmetals on resistively heated substrates was studied using multiphoton and electron ionization mass analysis. The activation energy for the production of gas phase methyl radicals from the decomposition of trimethylgallium under single collision conditions was found to be 26 ± 3 kcal/mol, which is to be compared to 13 ± 2 kcal/mol previously observed for trimethylaluminum. No evidence could be found for any surface radical reactions leading to the production of CH4 or C2H6. A proposed deposition mechanism accounting for these observations was tested by pyrolyzing trimethylgallium in the presence of hydrazine. No change in methyl signal was observed, supporting the theory that radical reactions do not occur on the surface under the conditions employed.

scholarly journals Gas phase chemical vapor deposition chemistry of triethylboron probed by boron–carbon thin film deposition and quantum chemical calculations

2015 ◽  
Vol 3 (41) ◽  
pp. 10898-10906 ◽  
Author(s):  
Mewlude Imam ◽  
Konstantin Gaul ◽  
Andreas Stegmüller ◽  
Carina Höglund ◽  
Jens Jensen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Quantum Chemical Calculations ◽  
Vapor Deposition ◽  
Quantum Chemical ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Single Source Precursor ◽  
Phase Chemistry

We present triethylboron (TEB) as a single-source precursor for chemical vapor deposition (CVD) of BxC thin films and study its gas phase chemistry under CVD conditions by quantum chemical calculations.

Characterization of Sputtered Films using the Scanning Electron Microscope

1973 ◽  
Vol 31 ◽  
pp. 44-45
Author(s):  
R. F. Schneidmiller ◽  
W. F. Thrower ◽  
C. Ang
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Sputtered Films ◽  
Plasma Sputtering ◽  
Microelectronic Devices ◽  
Control Film ◽  
Scanning Electron

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

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