Nanolayered Graphene/Hexagonal Boron Nitride/n-AlGaN Heterostructures as Solar-Blind Deep-Ultraviolet Photodetectors

2020 ◽  
Vol 3 (8) ◽  
pp. 7595-7603 ◽  
Author(s):  
Shang-Cheng Wu ◽  
Meng-Jer Wu ◽  
Yang-Fang Chen
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Solar Blind ◽  
Deep Ultraviolet ◽  
Ultraviolet Photodetectors

Catalyst-free growth of two-dimensional hexagonal boron nitride few-layers on sapphire for deep ultraviolet photodetectors

2019 ◽  
Vol 7 (47) ◽  
pp. 14999-15006 ◽  
Author(s):  
Menglei Gao ◽  
Junhua Meng ◽  
Yanan Chen ◽  
Siyuan Ye ◽  
Ye Wang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
Wafer Scale ◽  
Sapphire Substrates ◽  
Catalyst Free ◽  
Deep Ultraviolet ◽  
Free Growth ◽  
Ultraviolet Photodetectors

Catalyst-free growth of wafer-scale h-BN few-layers is realized on sapphire substrates by the combination of surface nitridation and N+ sputtering.

High-performance deep ultraviolet photodetectors based on few-layer hexagonal boron nitride

Nanoscale ◽  
2018 ◽  
Vol 10 (12) ◽  
pp. 5559-5565 ◽  
Author(s):  
Heng Liu ◽  
Junhua Meng ◽  
Xingwang Zhang ◽  
Yanan Chen ◽  
Zhigang Yin ◽  
...  
Keyword(s):  
Boron Nitride ◽  
High Performance ◽  
Hexagonal Boron Nitride ◽  
Spectral Selectivity ◽  
Deep Ultraviolet ◽  
Ultraviolet Photodetectors

The deep ultraviolet photodetectors based on 2D h-BN show a high on/off ratio of >103 and good spectral selectivity.

Deep Ultraviolet Photodetectors Based on Carbon-Doped Two-Dimensional Hexagonal Boron Nitride

2020 ◽  
Vol 12 (24) ◽  
pp. 27361-27367 ◽  
Author(s):  
Ye Wang ◽  
Junhua Meng ◽  
Yan Tian ◽  
Yanan Chen ◽  
Gaokai Wang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Two Dimensional ◽  
Carbon Doped ◽  
Deep Ultraviolet ◽  
Ultraviolet Photodetectors

Solar-Blind Ultraviolet Photodetectors Based on Vertical Graphene-Hexagonal Boron Nitride Heterostructures

MRS Advances ◽  
2020 ◽  
Vol 5 (37-38) ◽  
pp. 1993-2002
Author(s):  
Jesse E. Thompson ◽  
Darian Smalley ◽  
Masahiro Ishigami
Keyword(s):  
Boron Nitride ◽  
Band Gap ◽  
Hexagonal Boron Nitride ◽  
Wide Band ◽  
Infrared Light ◽  
Visible Range ◽  
Wide Band Gap ◽  
Solar Blind ◽  
Key Factor ◽  
Ultraviolet Photodetectors

AbstractPhotodetectors operating in the ultraviolet (UV) play a pivotal role in applications such as ozone monitoring and biosensing. One key factor to successfully implementing such photodetectors is that they must be solar-blind to avoid detecting ambient visible and infrared light. Unfortunately, UV photodetectors based on silicon and other typical semiconductors are not natively solar-blind, since their band gap energies are in the visible range. Hexagonal boron nitride (h-BN) is an example of a wide band gap semiconductor which shows promise for use as the absorbing medium in a UV photodetector device, since its band gap is wide enough to make it inherently insensitive to light in the visible range and above. Here we report on the fabrication and characterization of a graphene-h-BN-heterostructure photodetector which utilizes a vertical geometry, in principle allowing for highly scalable production. We find that our device shows a finite photoresponse to illumination by a 254 nm light source, but not to a 365 nm source, thus suggesting that our device is solar-blind.

A simple, repeatable and highly stable self-powered solar-blind photoelectrochemical-type photodetector using amorphous Ga2O3 films grown on 3D carbon fiber paper

2021 ◽  
Author(s):  
Lijuan Huang ◽  
Zhengrui Hu ◽  
Hong Zhang ◽  
Yuanqiang Xiong ◽  
Shiqiang Fan ◽  
...  
Keyword(s):  
Carbon Fiber ◽  
Gallium Oxide ◽  
Three Dimensional ◽  
Next Generation ◽  
Solar Blind ◽  
Carbon Fiber Paper ◽  
Deep Ultraviolet ◽  
Self Powered ◽  
Ultraviolet Photodetectors

Gallium oxide (Ga2O3) has been extensively studied in recent years because it is a natural candidate material for next-generation solar-blind deep ultraviolet photodetectors (PDs). Herein, a three dimensional (3D) amorphous...

The Near Edge Structure of Hexagonal Boron Nitride

2014 ◽  
Vol 20 (4) ◽  
pp. 1053-1059 ◽  
Author(s):  
Nicholas L. McDougall ◽  
Rebecca J. Nicholls ◽  
Jim G. Partridge ◽  
Dougal G. McCulloch
Keyword(s):  
Boron Nitride ◽  
Density Functional ◽  
Light Emission ◽  
Hexagonal Boron Nitride ◽  
Core Loss ◽  
Experimental Studies ◽  
Stacking Faults ◽  
Edge Structure ◽  
Deep Ultraviolet ◽  
Electron Energy Loss

AbstractHexagonal boron nitride (hBN) is a promising material for a range of applications including deep-ultraviolet light emission. Despite extensive experimental studies, some fundamental aspects of hBN remain unknown, such as the type of stacking faults likely to be present and their influence on electronic properties. In this paper, different stacking configurations of hBN are investigated using CASTEP, a pseudopotential density functional theory code. AB-b stacking faults, in which B atoms are positioned directly on top of one another while N atoms are located above the center of BN hexagons, are shown to be likely in conventional AB stacked hBN. Bandstructure calculations predict a single direct bandgap structure that may be responsible for the discrepancies in bandgap type observed experimentally. Calculations of the near edge structure showed that different stackings of hBN are distinguishable using measurements of core-loss edges in X-ray absorption and electron energy loss spectroscopy. AB stacking was found to best reproduce features in the experimental B and N K-edges. The calculations also show that splitting of the 1s to π* peak in the B K-edge, recently observed experimentally, may be accounted for by the presence of AB-b stacking faults.

scholarly journals Hexagonal boron nitride pattern embedded in AlN template layer for visible-blind ultraviolet photodetectors

2017 ◽  
Vol 7 (5) ◽  
pp. 1463 ◽  
Author(s):  
Do Trong Thanh ◽  
Joo Jin ◽  
Kang Bok Ko ◽  
Beo Deul Ryu ◽  
Min Han ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Ultraviolet Photodetectors ◽  
Visible Blind
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