Effect of Lateral Size and Surface Passivation on the Near-Band-Edge Excitonic Emission from Quasi-Two-Dimensional CdSe Nanoplatelets

2019 ◽  
Vol 11 (44) ◽  
pp. 41821-41827 ◽  
Author(s):  
Jiahao Yu ◽  
Chaojian Zhang ◽  
Guotao Pang ◽  
Xiao Wei Sun ◽  
Rui Chen
Keyword(s):  
Surface Passivation ◽  
Band Edge ◽  
Near Band Edge ◽  
Lateral Size ◽  
Two Dimensional ◽  
Excitonic Emission

scholarly journals Two-dimensional iodine-monofluoride epitaxy on WSe2

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Yung-Chang Lin ◽  
Sungwoo Lee ◽  
Yueh-Chiang Yang ◽  
Po-Wen Chiu ◽  
Gun-Do Lee ◽  
...  
Keyword(s):  
Density Functional ◽  
Surface Passivation ◽  
Hexagonal Lattice ◽  
Chemical Vapor ◽  
Growth Promoter ◽  
Two Dimensional ◽  
Epitaxial Relationship ◽  
Chemical Vapor Deposition Growth ◽  
Scanning Transmission ◽  
Great Possibility

AbstractInterhalogen compounds (IHCs) are extremely reactive molecules used for halogenation, catalyst, selective etchant, and surface modification. Most of the IHCs are unstable at room temperature especially for the iodine-monofluoride (IF) whose structure is still unknown. Here we demonstrate an unambiguous observation of two-dimensional (2D) IF bilayer grown on the surface of WSe2 by using scanning transmission electron microscopy and electron energy loss spectroscopy. The bilayer IF shows a clear hexagonal lattice and robust epitaxial relationship with the WSe2 substrate. Despite the IF is known to sublimate at −14 °C and has never found as a solid form in the ambient condition, but surprisingly it is found stabilized on a suitable substrate and the stabilized structure is supported by a density functional theory. This 2D form of IHC is actually a byproduct during a chemical vapor deposition growth of WSe2 in the presence of alkali metal halides as a growth promoter and requires immediate surface passivation to sustain. This work points out a great possibility to produce 2D structures that are unexpected to be crystallized or cannot be obtained by a simple exfoliation but can be grown only on a certain substrate.

Near-Band-Edge Photoluminescence of Sulfur-Doped GaAs Prepared by Liquid Phase Epitaxy

1995 ◽  
Vol 34 (Part 1, No. 1) ◽  
pp. 42-47 ◽  
Author(s):  
Gwo-Cherng Jiang ◽  
Yih Chang ◽  
Liann-Be Chang ◽  
Yung-Der Juang ◽  
SuLu
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Band Edge ◽  
Near Band Edge

Photoluminescence excitation spectroscopy of GaAs:Er,O in the near‐band‐edge region

1996 ◽  
Vol 79 (11) ◽  
pp. 8682-8687 ◽  
Author(s):  
R. A. Hogg ◽  
K. Takahei ◽  
A. Taguchi
Keyword(s):  
Band Edge ◽  
Near Band Edge ◽  
Edge Region ◽  
Photoluminescence Excitation

Effects of electron–phonon interaction and chemical shift on near-band-edge recombination in GaN

2002 ◽  
Vol 91 (12) ◽  
pp. 9827 ◽  
Author(s):  
M. Germain ◽  
E. Kartheuser ◽  
A. L. Gurskii ◽  
E. V. Lutsenko ◽  
I. P. Marko ◽  
...  
Keyword(s):  
Chemical Shift ◽  
Band Edge ◽  
Near Band Edge ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

ChemInform Abstract: NEAR BAND-EDGE LUMINESCENCE IN ZINC SELENIDE GROWN FROM GALLIUM SOLUTION

1979 ◽  
Vol 10 (21) ◽  
Author(s):  
B. J. FITZPATRICK ◽  
R. N. BHARGAVA ◽  
S. P. HERKO ◽  
P. M. HARNACK
Keyword(s):  
Zinc Selenide ◽  
Band Edge ◽  
Near Band Edge ◽  
Edge Luminescence ◽  
Band Edge Luminescence

Irradiation Effects of60Co γ-Ray on the near Band-Edge Photoluminescence (PL) of ZnSe

1988 ◽  
Vol 27 (Part 1, No. 9) ◽  
pp. 1669-1673 ◽  
Author(s):  
Katsumi Mochizuki ◽  
Katashi Masumoto
Keyword(s):  
Band Edge ◽  
Near Band Edge ◽  
Irradiation Effects ◽  
Γ Ray

Recovering near-band-edge ultraviolet responses in a wide-bandgap oxide with dipole-forbidden bandgap transition

2015 ◽  
Vol 649 ◽  
pp. 625-629 ◽  
Author(s):  
Rui Deng ◽  
Yong-Feng Li ◽  
Bin Yao ◽  
Zhan-Hui Ding ◽  
Xuan Fang ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Band Edge ◽  
Near Band Edge
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