scholarly journals Manipulating Localized Vibrations of Interstitial Te for Ultra-High Thermoelectric Efficiency in p-Type Cu–In–Te Systems

2019 ◽  
Vol 11 (35) ◽  
pp. 32192-32199 ◽  
Author(s):  
Ting Ren ◽  
Zhongkang Han ◽  
Pengzhan Ying ◽  
Xie Li ◽  
Xiaoyan Li ◽  
...  
Keyword(s):  
Thermoelectric Efficiency ◽  
P Type ◽  
Localized Vibrations

scholarly journals Термоэлектрические свойства нанокомпозитного Bi-=SUB=-0.45-=/SUB=-Sb-=SUB=-1.55-=/SUB=-Te-=SUB=-2.985-=/SUB=- с микрочастицами SiO-=SUB=-2-=/SUB=-

2019 ◽  
Vol 53 (6) ◽  
pp. 751
Author(s):  
А.А. Шабалдин ◽  
П.П. Константинов ◽  
Д.А. Курдюков ◽  
Л.Н. Лукьянова ◽  
А.Ю. Самунин ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Solid Solution ◽  
Electrical Conductivity ◽  
Wide Temperature Range ◽  
Figure Of Merit ◽  
Nanostructured Material ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Efficiency ◽  
Thermoelectric Figure ◽  
P Type

AbstractNanocomposite thermoelectrics based on Bi_0.45Sb_1.55Te_2.985 solid solution of p -type conductivity are fabricated by the hot pressing of nanopowders of this solid solution with the addition of SiO_2 microparticles. Investigations of the thermoelectric properties show that the thermoelectric power of the nanocomposites increases in a wide temperature range of 80–420 K, while the thermal conductivity considerably decreases at 80–320 K, which, despite a decrease in the electrical conductivity, leads to an increase in the thermoelectric efficiency in the nanostructured material without the SiO_2 addition by almost 50% (at 300 K). When adding SiO_2, the efficiency decreases. The initial thermoelectric fabricated without nanostructuring, in which the maximal thermoelectric figure of merit ZT = 1 at 390 K, is most efficient at temperatures above 350 K.

High thermoelectric efficiency in co-doped degenerate p-type PbTe

2010 ◽  
Vol 1267 ◽  
Author(s):  
Ioannis Androulakis ◽  
Ilyia Todorov ◽  
Duck Young Chung ◽  
Sedat Ballikaya ◽  
Guoyu Wang ◽  
...  
Keyword(s):  
Heavy Hole ◽  
Elevated Temperatures ◽  
Resonant State ◽  
Band Model ◽  
Hole Density ◽  
Thermoelectric Efficiency ◽  
Na Substitution ◽  
Valence Bands ◽  
P Type ◽  
Two Band Model

AbstractWe explored the effect of K and K-Na substitution for Pb atoms in the lattice of PbTe, in an effort to test a hypothesis for the development of a resonant state that may enhance the thermoelectric power. At 300K the data can adequately be explained by a combination of a single and two-band model for the valence band of PbTe depending on hole density that varies in the range 1-15 × 1019 cm-3. A change in scattering mechanism was observed in the temperature dependence of the electrical conductivity, σ, for samples concurrently doped with K and Na which results in significantly enhanced σ at elevated temperatures and hence power factors. Thermal conductivity data provide evidence of a strong interaction between the light- and the heavy-hole valence bands at least up to 500K. Figure of merits as high as 1.3 at 700K were measured as a result of the enhanced power factors.

Improved thermoelectric efficiency in p-type ZnSb through Zn deficiency

2015 ◽  
Vol 08 (02) ◽  
pp. 1550028 ◽  
Author(s):  
Qilong Guo ◽  
Sijun Luo
Keyword(s):  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Hole Concentration ◽  
Zn Deficiency ◽  
Thermoelectric Efficiency ◽  
Thermoelectric Figure ◽  
Pristine Sample ◽  
Zn Content ◽  
P Type ◽  
Content Regulation

We herein report a feasible approach to improve the thermoelectric performance of p-type ZnSb compound by Zn content regulation. It is found that Zn vacancies formed by Zn deficiency not only efficiently enhance the electrical conductivity due to the improved hole concentration but also markedly lower the lattice thermal conductivity on account of the reinforced point defect scattering of phonons. The ZnSb compound with a nominal 3 mol.% Zn deficiency shows a maximum thermoelectric figure of merit ZT of ~ 0.8 at 700 K which is a ~ 60% improvement over the pristine sample. The strategies of further enhancing the performance of ZnSb -based material have been discussed.

scholarly journals Nanostructuring and High Thermoelectric Efficiency in p-Type Ag(Pb1 –ySny)mSbTe2 +m

2006 ◽  
Vol 18 (9) ◽  
pp. 1170-1173 ◽  
Author(s):  
J. Androulakis ◽  
K. F. Hsu ◽  
R. Pcionek ◽  
H. Kong ◽  
C. Uher ◽  
...  
Keyword(s):  
Thermoelectric Efficiency ◽  
P Type

Thermoelectric properties of germanium telluride with fine-grained structure

2020 ◽  
Vol 11 ◽  
pp. 15-25
Author(s):  
L. D. Ivanova ◽  
◽  
Yu. V. Granatkina ◽  
I. Yu. Nikhezina ◽  
A. G. Malchev ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Melt Spinning ◽  
High Energy ◽  
Grain Structure ◽  
Thermoelectric Efficiency ◽  
Fine Grained ◽  
Germanium Telluride ◽  
Fine Grained Structure ◽  
Properties Of Materials ◽  
P Type

The microstructure and thermoelectric properties of materials based on germanium telluride p-type conductivity doped with copper and bismuth obtained by hot pressing of three types powders prepared by grinding an ingot to a size of hundreds microns (0.315  mm) to hundreds of nanometers (mechanical activation) in planetary high-energy mill and melt spinning were investigated. The microstructure of the samples were analyzed by optical and electron scanning microscopies. The nanoscale grain structure of these samples was established. The thermoelectric characteristics of the materials: Seebeck coefficient, electrical and thermal conductivities, were measured both at room temperature and in the temperature range of 100 – 800 K. The slopes of these dependencies are estimated. The coefficient of thermoelectric figure of merit is calculated. The higher thermoelectric efficiency (ZT = 1.5 at 600 K) was received for the samples hot-pressed from granules, prepared by melt spinning.

Enhancing the thermoelectric efficiency in p-type Mg3Sb2 via Mg site co-doping

2021 ◽  
Author(s):  
Minati Tiadi ◽  
Manjusha Battabyal ◽  
P. K. Jain ◽  
Avnee Chauhan ◽  
Dillip Kumar Satapathy ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
Full Potential ◽  
Thermoelectric Efficiency ◽  
Co Doping ◽  
P Type

The Mg3Sb2 based Zintl compounds are promising thermoelectric materials due to the abundance of magnesium and antimony in nature. However, the main hindrance in realizing the full potential of Mg3Sb2...

High thermoelectric efficiency of p-type BiSbTe-based composites with CuGaTe2 nanoinclusions

2019 ◽  
Vol 172 ◽  
pp. 88-92 ◽  
Author(s):  
Yuanyue Li ◽  
Xiaocui Wang ◽  
Guoxia Liu ◽  
Byoungchul Shin ◽  
Fukai Shan
Keyword(s):  
Thermoelectric Efficiency ◽  
P Type

scholarly journals Discovery of multivalley Fermi surface responsible for the high thermoelectric performance in Yb14MnSb11 and Yb14MgSb11

2021 ◽  
Vol 7 (4) ◽  
pp. eabe9439
Author(s):  
Christopher J. Perez ◽  
Maxwell Wood ◽  
Francesco Ricci ◽  
Guodong Yu ◽  
Trinh Vo ◽  
...  
Keyword(s):  
Solid Solution ◽  
Experimental Approach ◽  
Space Exploration ◽  
Thermoelectric Generators ◽  
Thermoelectric Efficiency ◽  
Zintl Phases ◽  
Deep Space Exploration ◽  
Thermoelectric Systems ◽  
P Type ◽  
Insight Into

The Zintl phases, Yb14MSb11 (M = Mn, Mg, Al, Zn), are now some of the highest thermoelectric efficiency p-type materials with stability above 873 K. Yb14MnSb11 gained prominence as the first p-type thermoelectric material to double the efficiency of SiGe alloy, the heritage material in radioisotope thermoelectric generators used to power NASA’s deep space exploration. This study investigates the solid solution of Yb14Mg1−xAlxSb11 (0 ≤ x ≤ 1), which enables a full mapping of the metal-to-semiconductor transition. Using a combined theoretical and experimental approach, we show that a second, high valley degeneracy (Nv = 8) band is responsible for the groundbreaking performance of Yb14MSb11. This multiband understanding of the properties provides insight into other thermoelectric systems (La3−xTe4, SnTe, Ag9AlSe6, and Eu9CdSb9), and the model predicts that an increase in carrier concentration can lead to zT > 1.5 in Yb14MSb11 systems.

scholarly journals Effects of Ga substitution on electronic and thermoelectric properties of gapless semiconductor V3Al

RSC Advances ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 3847-3855 ◽  
Author(s):  
Xiaorui Chen ◽  
Yuhong Huang ◽  
Jing Liu ◽  
Hongkuan Yuan ◽  
Hong Chen
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Room Temperature ◽  
Thermoelectric Efficiency ◽  
Type V ◽  
P Type ◽  
Ga Substitution

Reduced thermal conductivity and enhanced thermoelectric efficiency was demonstrated by Ga substitution for Al at room temperature in p-type V3Al1−xGax.

scholarly journals XVI Международная конференция "Термоэлектрики и их применения --- 2018" (ISCTA 2018), Санкт-Петербург, 8-12 октября 2018 г. Новое направление применения термоэлектрических преобразователей энергии

2019 ◽  
Vol 53 (7) ◽  
pp. 875
Author(s):  
З.М. Дашевский ◽  
П.П. Константинов ◽  
C.Я. Скипидаров
Keyword(s):  
Cold Water ◽  
Waste Heat ◽  
Electrical Energy ◽  
Hot Water ◽  
Considerable Proportion ◽  
Thermoelectric Efficiency ◽  
Heating Systems ◽  
Additional Water ◽  
P Type ◽  
Thermoelectric Converters

AbstractIn southern countries, including European states, solar collectors for additional water-heating systems are widely used. However, the disadvantage of such systems is that a considerable proportion of solar energy cannot be used with increasing water temperature and dissipates into the environment. It is proposed to use waste heat at a high temperature, which is supplied to a thermoelectric generator (TEG) operating on the basis of a temperature difference between the hot water in the solar collector and cold water supplied to a radiator on the other TEG side. This is a new application of thermoelectric converters, in which the converter can act not only as a source of electrical energy but also as a source of low-potential heat coming from the radiator. The total conversion efficiency in such devices can reach 90%. It is shown that the use of p -type legs in a TEG with the cleavage planes of the legs parallel to the heat-flux direction instead of the conventional parallel orientation results in an increase in the thermoelectric efficiency by 25% on average in the temperature range of 100–300°C.

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