Fabrication, Mechanisms, and Properties of High-Performance Flexible Transparent Conductive Gas-Barrier Films Based on Ag Nanowires and Atomic Layer Deposition

2019 ◽  
Vol 11 (37) ◽  
pp. 34212-34221 ◽  
Author(s):  
Dung-Yue Su ◽  
Che-Chen Hsu ◽  
Wen-Hsuan Lai ◽  
Feng-Yu Tsai
Keyword(s):  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Gas Barrier ◽  
Barrier Films ◽  
Layer Deposition ◽  
Ag Nanowires

Low-temperature gas-barrier films by atomic layer deposition for encapsulating organic light-emitting diodes

2016 ◽  
Vol 27 (29) ◽  
pp. 295706 ◽  
Author(s):  
Ming-Hung Tseng ◽  
Hui-Huan Yu ◽  
Kun-Yi Chou ◽  
Jwo-Huei Jou ◽  
Kung-Liang Lin ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Light Emitting Diodes ◽  
Atomic Layer ◽  
Organic Light Emitting Diodes ◽  
Gas Barrier ◽  
Light Emitting ◽  
Barrier Films ◽  
Organic Light ◽  
Layer Deposition

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

Ozone-Based Atomic Layer Deposition of Crystalline V2O5 Films for High Performance Electrochemical Energy Storage

2012 ◽  
Vol 24 (7) ◽  
pp. 1255-1261 ◽  
Author(s):  
Xinyi Chen ◽  
Ekaterina Pomerantseva ◽  
Parag Banerjee ◽  
Keith Gregorczyk ◽  
Reza Ghodssi ◽  
...  
Keyword(s):  
Energy Storage ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electrochemical Energy Storage ◽  
Layer Deposition ◽  
Electrochemical Energy
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