Highly Thermally Conducting Polymer-Based Films with Magnetic Field-Assisted Vertically Aligned Hexagonal Boron Nitride for Flexible Electronic Encapsulation

2019 ◽  
Vol 11 (19) ◽  
pp. 17915-17924 ◽  
Author(s):  
Jie Yuan ◽  
Xitang Qian ◽  
Zhichao Meng ◽  
Bo Yang ◽  
Zhi-Quan Liu
Keyword(s):  
Magnetic Field ◽  
Boron Nitride ◽  
Conducting Polymer ◽  
Hexagonal Boron Nitride ◽  
Flexible Electronic ◽  
Vertically Aligned ◽  
Thermally Conducting

scholarly journals Observation of fractional Chern insulators in a van der Waals heterostructure

Science ◽  
2018 ◽  
Vol 360 (6384) ◽  
pp. 62-66 ◽  
Author(s):  
Eric M. Spanton ◽  
Alexander A. Zibrov ◽  
Haoxin Zhou ◽  
Takashi Taniguchi ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Boron Nitride ◽  
Symmetry Breaking ◽  
Hexagonal Boron Nitride ◽  
Landau Levels ◽  
Topological Order ◽  
Hall Conductance ◽  
Van Der Waals Heterostructure ◽  
Ordered Phases ◽  
Chern Insulators

Topologically ordered phases are characterized by long-range quantum entanglement and fractional statistics rather than by symmetry breaking. First observed in a fractionally filled continuum Landau level, topological order has since been proposed to arise more generally at fractional fillings of topologically nontrivial Chern bands. Here we report the observation of gapped states at fractional fillings of Harper-Hofstadter bands arising from the interplay of a magnetic field and a superlattice potential in a bilayer graphene–hexagonal boron nitride heterostructure. We observed phases at fractional filling of bands with Chern indices C=−1, ±2, and ±3. Some of these phases, in C=−1 and C=2 bands, are characterized by fractional Hall conductance—that is, they are known as fractional Chern insulators and constitute an example of topological order beyond Landau levels.

scholarly journals Enhanced optoelectronic performances of vertically aligned hexagonal boron nitride nanowalls-nanocrystalline diamond heterostructures

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Kamatchi Jothiramalingam Sankaran ◽  
Duc Quang Hoang ◽  
Srinivasu Kunuku ◽  
Svetlana Korneychuk ◽  
Stuart Turner ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Nanocrystalline Diamond ◽  
Vertically Aligned

scholarly journals Topological valley currents via ballistic edge modes in graphene superlattices near the primary Dirac point

2020 ◽  
Vol 3 (1) ◽  
Author(s):  
Yang Li ◽  
Mario Amado ◽  
Timo Hyart ◽  
Grzegorz. P. Mazur ◽  
Jason W. A. Robinson
Keyword(s):  
Magnetic Field ◽  
Boron Nitride ◽  
Dirac Point ◽  
Hexagonal Boron Nitride ◽  
Zero Magnetic Field ◽  
Decay Length ◽  
Topological Phase ◽  
Show Evidence ◽  
Nonlocal Transport

AbstractGraphene on hexagonal boron nitride (hBN) can exhibit a topological phase via mutual crystallographic alignment. Recent measurements of nonlocal resistance (Rnl) near the secondary Dirac point (SDP) in ballistic graphene/hBN superlattices have been interpreted as arising due to the quantum valley Hall state. We report hBN/graphene/hBN superlattices in which Rnl at SDP is negligible, but below 60 K approaches the value of h/2e2 in zero magnetic field at the primary Dirac point with a characteristic decay length of 2 μm. Furthermore, nonlocal transport transmission probabilities based on the Landauer-Büttiker formalism show evidence for spin-degenerate ballistic valley-helical edge modes, which are key for the development of valleytronics.

Interplay of orbital hopping and perpendicular magnetic field in anisotropic phase transitions for Bernal bilayer graphene and hexagonal boron-nitride

2019 ◽  
Vol 21 (1) ◽  
pp. 238-245 ◽  
Author(s):  
P. T. T. Le ◽  
M. Davoudiniya ◽  
M. Yarmohammadi
Keyword(s):  
Magnetic Field ◽  
Phase Transitions ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Bilayer Graphene ◽  
Perpendicular Magnetic Field ◽  
Magnetic Field Effects ◽  
Field Effects ◽  
Electronic Phase ◽  
Anisotropic Phase

We theoretically address the perpendicular magnetic field effects on the orbital electronic phase of Bernal bilayer graphene and hexagonal boron-nitride (h-BN).

Facile synthesis of vertically aligned hexagonal boron nitride nanosheets hybridized with graphitic domains

2012 ◽  
Vol 22 (11) ◽  
pp. 4818 ◽  
Author(s):  
Amir Pakdel ◽  
Xuebin Wang ◽  
Chunyi Zhi ◽  
Yoshio Bando ◽  
Kentaro Watanabe ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Facile Synthesis ◽  
Boron Nitride Nanosheets ◽  
Vertically Aligned

scholarly journals Magnetic-field-dependent quantum emission in hexagonal boron nitride at room temperature

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Annemarie L. Exarhos ◽  
David A. Hopper ◽  
Raj N. Patel ◽  
Marcus W. Doherty ◽  
Lee C. Bassett
Keyword(s):  
Magnetic Field ◽  
Boron Nitride ◽  
Room Temperature ◽  
Hexagonal Boron Nitride ◽  
Field Dependent
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